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    Microchip Technology Inc TN0604N3-G

    MOSFET N-CH 40V 700MA TO92-3
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    Microchip Technology Inc TN0604N3-G-P005

    MOSFET N-CH 40V 700MA TO92-3
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    Microchip Technology Inc TN0604N3-G-P013

    MOSFET N-CH 40V 700MA TO92-3
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    Microchip Technology Inc TN0604N3

    N-Channel Enhancement-Mode Vertical DMOS FET - 40V Vdss - 700mA (Id) @ 25°C - 750mOhm @ 1.5A, 10V Rds On (Max) @ Id, Vgs - TO-92-3.
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    SI TN0604N3

    MOSFET Transistor, N-Channel, TO-92
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    Quest Components TN0604N3 216
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    TN0604N3 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TN0604N3 Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TN0604N3 Supertex N-Channel Enhancement-Mode Vertical DMOS FET Original PDF
    TN0604N3 Unknown FET Data Book Scan PDF
    TN0604N3-G Supertex N-Channel Enhancement-Mode Vertical DMOS FET Original PDF
    TN0604N3-G-P005 Microchip Technology Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 700MA TO92-3 Original PDF
    TN0604N3-G-P013 Microchip Technology Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 700MA TO92-3 Original PDF

    TN0604N3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TN0604N3 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)40 V(BR)GSS (V)20 I(D) Max. (A)1.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)4.6 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)-55


    Original     		PDF TN0604N3 Junc-Case125

    n-channel fet to-92

    Abstract: SOW-20 TN0604 TN0604N3 TN0604WG siemens fet to92
    Text: TN0604WG Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) 40V 0.75Ω 4.0A 40V 1.0Ω 4.0A Order Number / Package TO-92 SOW-20* 1.6V TN0604N3 — 1.6V — TN0604WG


    Original     		PDF TN0604WG SOW-20* TN0604N3 SO-20 n-channel fet to-92 SOW-20 TN0604 TN0604N3 TN0604WG siemens fet to92

    TO-92 pinouts

    Abstract: SOW-20
    Text: TN0602 TN0604 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) 20V 0.75Ω 4.0A 40V 0.75Ω 40V 1.0Ω Order Number / Package TO-92 SOW-20* 1.6V — — 4.0A 1.6V TN0604N3


    Original     		PDF TN0602 TN0604 TN0604N3 SOW-20* TN0604WG SO-20 140pF TO-92 pinouts SOW-20

    SOW-20

    Abstract: TN0604 TN0604N3 TN0604WG TO-92 pinouts
    Text: TN0604 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) 40V 0.75Ω 4.0A 40V 1.0Ω 4.0A Order Number / Package TO-92 SOW-20* 1.6V TN0604N3 — 1.6V — TN0604WG * Same as SO-20 with 300 mil wide body.


    Original     		PDF TN0604 SOW-20* TN0604N3 TN0604WG SO-20 SOW-20 TN0604 TN0604N3 TN0604WG TO-92 pinouts

    TN0604N3

    Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
    Text: Supertex Inc. OBSOLETE PRODUCT LIST Updated 12/13/02 Obsolete Part # Pkg Suggested Replacement Same pkg Suggested Replacement - Sim. Elec. (If same pkg alt is not close) Drop-In Alt Status 2N6659 VN2210N2 TN0104N3 obs 2N7007 TN5325N3 - obs AN0332 CG -


    Original     		PDF 2N6659 VN2210N2 TN0104N3 2N7007 TN5325N3 AN0332 AP0332 VN2110K1 BSS123 DN2535 TN0604N3 HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex

    marking n3

    Abstract: TN0604N3 75E1 MS-013 TN0604 TN0604N3-G TN0604WG-G n-channel fet to-92
    Text: TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original     		PDF TN0604 140pF MS-013, DSFP-TN0604 A102507 marking n3 TN0604N3 75E1 MS-013 TN0604 TN0604N3-G TN0604WG-G n-channel fet to-92

    b0705

    Abstract: No abstract text available
    Text: Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► TN0604 General Description Low threshold 1.6V max. High input impedance Low input capacitance (140pF typical) Fast switching speeds Low on-resistance


    Original     		PDF TN0604 DSFP-TN0604 B070511 b0705

    TO243AA

    Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
    Text: Supertex, Inc. DMOS Products MSL and Maximum Temparture Ratings Device 2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G DN2540N8-G DN2625K4-G DN2625K6-G DN3135K1-G DN3135N8-G DN3145N8-G DN3525N8-G DN3535N8-G


    Original     		PDF 2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G TO243AA TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB

    "low threshold mosfet"

    Abstract: TN2524N8 VN2210N3 VN2224 VN2224N3 ICM7555 IRF520 TN0604N3 TN2524N
    Text: AN-D02 Application Note Low-Threshold TN/TP Series MOSFETs: Structure, Performance and Applications Introduction age. One method of reducing threshold voltage is to reduce the body dopant concentration until the required VGS th is met. This technique by itself is dangerous because it degrades other device parameters. The first and most important of these is drain-source breakdown (BVDSS), which is a


    Original     		PDF AN-D02 "low threshold mosfet" TN2524N8 VN2210N3 VN2224 VN2224N3 ICM7555 IRF520 TN0604N3 TN2524N

    charge pump relay drive circuit

    Abstract: IRF P CHANNEL MOSFET pioneer mosfet IRF-520 Mosfet VN2210N3 ICM7555 TN0604N3 TN2524N8 VN2224 VN2224N3
    Text: TN/TP Series Application Note AN–D2 Low-Threshold MOSFETs: Structure, Performance and Applications Since an increasing amount of attention is being focused on system interface from low-level logic, the need for higher current and/or low on-resistance at drive levels of only 3-5 volts has


    Original     		PDF

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


    Original     		PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


    Original     		PDF T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    D86S

    Abstract: 68b1 6.2B2 56B2 5.6B2 D158S 54B2 62b1 D33SH 62B2
    Text: A B C D REVISIONS ENGINEERING NOTES 1. Device is dead bug laid out 2. Pin 1 is pointing south 3. A 0.01uf chip capacitor in parallel 4. Use an odd channel, also reserve an 5. Use an odd and even chan. Tie them 6. DUT Analog star GND pin 51, 54 7. Supertex Inc.


    Original     		PDF TN0604N3 BT8952 RCV15 RCVCLK58 GND51 VAA50 XFS48 AGAIN1462 D68SH D36SH D86S 68b1 6.2B2 56B2 5.6B2 D158S 54B2 62b1 D33SH 62B2

    DN2540N5

    Abstract: HT0440LG TN2130K1-G hv5308pj-b TN2510N8 HT0440LG-G LR8N3-G LR645LG-G DN2530N3-G LR8N3
    Text: March 2010 SUPERTEX PRODUCTS TRANSITIONED TO RoHS COMPLIANT PACKAGING Leaded / Non-Green Part Number Obsolete Lead-Free / Green Part Number (Replacement) 2N7000 2N7002 2N7008 CL2K4 CL2N3 CL2N8 DN2470K4 DN2530N3 DN2530N8 DN2535N3 DN2535N5 DN2540N3 DN2540N5


    Original     		PDF 2N7000 2N7002 2N7008 DN2470K4 DN2530N3 DN2530N8 DN2535N3 DN2535N5 DN2540N3 DN2540N5 DN2540N5 HT0440LG TN2130K1-G hv5308pj-b TN2510N8 HT0440LG-G LR8N3-G LR645LG-G DN2530N3-G LR8N3

    IRF-520 Mosfet

    Abstract: VN2224 to-220 IRF P CHANNEL MOSFET definition of photovoltaic effect IRF P CHANNEL MOSFET TO-220
    Text: TN/TP Series Application Note AN–D2 Low-Threshold MOSFETs: Structure, Performance and Applications Since an increasing amount of attention is being focused on system interface from low-level logic, the need for higher current and/or low on-resistance at drive levels of only 3-5 volts has


    Original     		PDF TN2124K1 TN2124K1 IRF-520 Mosfet VN2224 to-220 IRF P CHANNEL MOSFET definition of photovoltaic effect IRF P CHANNEL MOSFET TO-220

    TRANSISTOR LIZ

    Abstract: No abstract text available
    Text: TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original     		PDF TN0604 140pF DSFP-TN0604 A091608 TRANSISTOR LIZ

    IRF-520 Mosfet

    Abstract: cell phone charger 3.7 VDC cost of logic pulser TN0520N3 IRF P CHANNEL MOSFET logic pulser cost pioneer mosfet VN1210N5 VN0220N3 5V to 240V relay ic
    Text: TN/TP Series Applications TN/TP Series Application Note AN–D2 3 Low-Threshold MOSFETs: Structure, Performance and Applications Punch-through is defined as the drain voltage needed to create an electric field connecting the drain and source, as shown in Figure


    Original     		PDF TN0524N3 IRF-520 Mosfet cell phone charger 3.7 VDC cost of logic pulser TN0520N3 IRF P CHANNEL MOSFET logic pulser cost pioneer mosfet VN1210N5 VN0220N3 5V to 240V relay ic

    ICM7555

    Abstract: TN0520N3 TN0524N3 TN0604N3 VN02 VN0220N3 VN1210N5 IRF P CHANNEL MOSFET
    Text: TN/TP Series Application Note AN–D2 3 Low-Threshold MOSFETs: Structure, Performance and Applications Punch-through is defined as the drain voltage needed to create an electric field connecting the drain and source, as shown in Figure 2, at voltages less than the actual BVDSS rating.


    Original     		PDF TN0524N3 ICM7555 TN0520N3 TN0524N3 TN0604N3 VN02 VN0220N3 VN1210N5 IRF P CHANNEL MOSFET

    mosfet cross reference

    Abstract: bs170 replacement VN10KM replacement CROSS REFERENCE 2n6661 BST72A replacement BSN10 "cross reference" BST72A CROSS equivalent of BS250 ZVNL110A cross reference vn10km cross
    Text: MOSFET Cross Reference* Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number 2N6660 2N6660 IRFF110 VN2210N2 VN0605T TN2106K1-G ZVN0540A VN0550N3-G


    Original     		PDF 2N6660 IRFF110 VN2210N2 VN0605T TN2106K1-G ZVN0540A VN0550N3-G 2N6661 mosfet cross reference bs170 replacement VN10KM replacement CROSS REFERENCE 2n6661 BST72A replacement BSN10 "cross reference" BST72A CROSS equivalent of BS250 ZVNL110A cross reference vn10km cross

    TN0520N3

    Abstract: TN0602N2 TN0204N2 TN0524N2 tn0620n2 TN0202N3 TN0202ND TN0204N3 TN0204ND TN0520N2
    Text: - 332 - f Ta=25cC y Vds m % tt € or f Vdg it TN0202N2 TN0202N3 TN0202ND TNQ2Q4N2 TN0204N3 TN0204ND TN0520N2 TN0520N3 TN0520ND TN0524N2 TN0524N3 TN0524ND TN0602N2 TNÛ6Q2N3 TN0602ND TN06Û4N2 TN0604N3 TN0604ND TN0604WG TN0606N2 TN0606N3 TN0606N5 TN06O6NO


    OCR Scan     		PDF TN0202K2 T0-39 TN0202N3 T0-92 TN0202ND TN0204N2 to-39 TN0610N3 TN0610N5 T0-220 TN0520N3 TN0602N2 TN0524N2 tn0620n2 TN0204N3 TN0204ND TN0520N2

    TN0602

    Abstract: No abstract text available
    Text: _ TN0602 TN0604 _ te x m e ._ Low Threshold S u p m N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS O N ' d (ON) VGS(th) b v dgs (max) (min) (max) TO-92 SOW-20* Diet 20V 0.75SÌ


    OCR Scan     		PDF TN0602 TN0604 TN0602N3 TN0604N3 SOW-20* TN0604WG TN0602ND TN0604ND SO-20 140pF

    tn0604n2

    Abstract: No abstract text available
    Text: T N 06 L ßi S u p e r te x inc . Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss/ R d S(ON ta(ON) V GS(th) b v dgs (max) (min) (max) TO-39 TO-92 SOW-20* DICE* 20V 0.75a 4.0A 1.6V — TN0602N3


    OCR Scan     		PDF TN0602N2 TN0604N2 TN0602N3 TN0604N3 SOW-20* TN0604WG TN0602ND TN0604ND TN06L

    Untitled

    Abstract: No abstract text available
    Text: TN0602 TN0604 Low Threshold ßi Super tex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information * BVDSS/ BV dgs ^DS ON (max) 20V 0.75a 20V 40V 40V 40V Same as TO-92 SOW-20* DICEt 1.6V — TN0602N3 — TN0602ND 0.850 4.0A 1.6V TN0602N2 —


    OCR Scan     		PDF TN0602 TN0604 SOW-20* TN0602N3 TN0602ND TN0602N2 TN0604N3 TN0604ND TN0604N2 TN0604WG