Untitled
Abstract: No abstract text available
Text: TIES14 TIES15 Gallium Arsenide Infrared-Emitting Diodes Select Products Here Go Designed to emit near-infrared radiant energy when forward biased FEATURES ● High output 60 mW Min at 25°C for the TIES14 ● Hemispherically shaped chips with diameter of 72 mils
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TIES14
TIES15
930nm
com/catalog/ties14
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TIES14
Abstract: TIES15
Text: ' - ' - "••" ' ■■ w — 1 TEXAS OPTOELECTRONICS INC 10E D I 0 ^ 3 ^ 3 4 Î7D# ~ . r. - -. . 7 . DDDDlDfi M I Texas Optoelectronics, Inc. TIES14, TIES15 Gallium Arsenide Infrared-Emitting Diodes D ESIG N ED TO EM IT NEAR-INFRARED R AD IAN T ENERGY W HEN FO RW ARD BIASED
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TIES14,
TIES15
TIES14
TIES15
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Untitled
Abstract: No abstract text available
Text: Texas O p to e le c tro n ic s , Inc. TIES14, TIES! 5 Gallium Arsenide Infrared-Emitting Diodes DESIGNED TO EMIT NEAR-INFRARED RADIANT ENERGY WHEN FORWARD BIASED • High Output . . . 60 mW Min at 25 °C for the TIES 14 • Hemispherically Shaped Chips with Diameter of 72 Mils
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TIES14,
G00D524
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TIL702
Abstract: TIL701 TIL393-9 til78 phototransistor TIL81 til312 7 segment display TIL78 TIL393 TIL313 TIL393-6
Text: m The Optoelectronics Data Book for Design Engineers T e x a s In s t r u m e n t s IMPORTANT NOTICES Texas Instruments reserves the right to make changes at any time in order to improve design and to supply the best product possible. Tl cannot assume any responsibility for any circuits shown or
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LCC4230-D
EPN4050
TIL702
TIL701
TIL393-9
til78 phototransistor
TIL81
til312 7 segment display
TIL78
TIL393
TIL313
TIL393-6
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