Untitled
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Text: Taxas Optoelectronics, Inc. TIES13, TIES13A Gallium Arsenide Infrared-Emitting Diodes DESIG N ED TO EMIT NEAR-INFRARED RADIANT ENERGY W HEN FORW ARD BIASED • High Output Efficiency • Hemispherically Shaped Chips with Diameter of 36 Mils • Spectrally Matched to Silicon Sensors . . . Peak Emission at 930 nm
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TIES13,
TIES13A
G00D524
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Untitled
Abstract: No abstract text available
Text: ML I I T0X9104 Silicon PIN Photodiode If l l l l l m WÊÊËFm Texas Optoelectronics, Inc. DESCRIPTION FEATURES This is a silicon PIN photodiode designed for detection of infrared radiation in short length fiber optic and other applications. It is packaged
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T0X9104
G00D524
10J65)
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Untitled
Abstract: No abstract text available
Text: T0X9103 Silicon Photodetector Texas Optoelectronics, Inc. DESCRIPTION FEATURES The TOX9103 is a high performance silicon photodiode designed to operate in the photo conductive mode. High resistivity silicon is used to provide high 900 nm responsivity and low
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T0X9103
OX9103
G00D524
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Untitled
Abstract: No abstract text available
Text: TOX 9008 Gallium Aluminum Arsenide Light Emitting Diode *70# Texas Optoelectronics, Inc. DESCRIPTION FEATURES This is a high radiance GaAl As IR LED optimized for fiber optic applications requiring high power and fast response time. • • • Internal lensing for efficient fiber coupling
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G00D524
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Untitled
Abstract: No abstract text available
Text: TOX 9003 Gallium Aluminum Arsenide _ Light Emitting Diode DESCRIPTION FEATURES High radiance GaAIAs IR LED optimized for coupling to a variety of fibers. The unique LED chip design combines high power coupling with wide bandwidth operation. • • •
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G00D524
IH375)
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Untitled
Abstract: No abstract text available
Text: •7 0 1 T IED 5 7 / T IE D 58 S ilic o n A va la n c h e Photodiode Texas Optoelectronics, Inc. DESCRIPTION FEATURES The TIED 57 and TIED 58 are high speed photodiodes with 10 mil or 30 mil' active area diameters. Both are designed to operate in the reverse voltage avalanche mode. Applications
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T0-18
G00D524
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Untitled
Abstract: No abstract text available
Text: TIES27 Gallium Arsenide Infrared-Emitting Diodes Texas Optoelectronics, Inc. DESIGNED TO EM IT N E A R -IN FR A R E D R A D IA N T ENERGY WHEN FORWARD BIASED • High Output Power . . . 15 mW Min at 25°C • Spectrally Matched to Silicon Sensors . . .Peak Emission at 930 nm
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TIES27
G00D524
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Untitled
Abstract: No abstract text available
Text: «O f Texas Optoelectronics, 4N41 7-Seament Numeric Display Inc. HERMETICALLY SEALED SOLID-STATE VISIBLE DISPLAY Available with Screening in Accordance with MIL-D-87157, 4N41-TXV Withstands Severe Environmental Conditions Left-Hand Decimal 6,9-mm 0.270-Inch Character Height
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MIL-D-87157,
4N41-TXV
270-Inch)
450-in
G00D524
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Untitled
Abstract: No abstract text available
Text: Texas O p to e le c tro n ic s , Inc. TIES14, TIES! 5 Gallium Arsenide Infrared-Emitting Diodes DESIGNED TO EMIT NEAR-INFRARED RADIANT ENERGY WHEN FORWARD BIASED • High Output . . . 60 mW Min at 25 °C for the TIES 14 • Hemispherically Shaped Chips with Diameter of 72 Mils
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TIES14,
G00D524
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Untitled
Abstract: No abstract text available
Text: ¡M rrn i lllll I • ■ F b TIED 6 9 A v a la n c h e Photodiod e T e x a s O p t o e l e c t r o n ic s , In c . DESCRIPTION FEATURES The TIED69 is a high-speed, high-resistivity photodiode. It is designed to operate in the reverse-voltage avalanche region just below the
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TIED69
TIED56
TIED59
60toelectronics,
G00D524
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Untitled
Abstract: No abstract text available
Text: 1701 T0 X9 10 6 N P N S ilic o n P h o to tra n s is to rs Texas Optoelectronics, Inc. DESCRIPTION The TOX 9106 is an NPN silicon phototransistor mounted in a lensed hermetically sealed TO-18 package. The lensing effect allows an acceptance half angle of typically 10° measured
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G00D524
IH375)
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Untitled
Abstract: No abstract text available
Text: Texas Optoelectronics, Inc. TIES35 Gallium Arsenide Infrared-Emittinfl Diodes D E S IG N E D T O E M IT N E A R I N F R A R E D R A D I A N T E N E R G Y W H EN F O R W A R D B IA S E D • High Speed, High Efficiency • Hemispherically Shaped 18-Mil-Diameter Chip
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TIES35
18-Mil-Diameter
G00D524
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233-AA
Abstract: Silicon Photocells uv Photocell INFRAR to233
Text: *70/ Spectra-Band Photocell Series Texas Optoelectronics, Inc. A series of spectral-response silicon photocells designed for unique product applications. VIO-BLUE FEATURES Enhanced violet and blue response. Also can be used in U.V. detection because of high sensitivity
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G00D524
233-AA
Silicon Photocells
uv Photocell
INFRAR
to233
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Untitled
Abstract: No abstract text available
Text: «OI T0X9105 Large Area Silicon Quadrant Photodiode Texas Optoelectronics, Inc. DESCRIPTION FEATURES The TOX 9105 is a high-speed quadrantgeom etry, h ig h -re s is tiv ity P-type s ilic o n photodiode. This device is designed specifically for applications in low cost laser alignment,
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T0X9105
06//m
G00D524
IH375)
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Untitled
Abstract: No abstract text available
Text: *70# TOX 9001 Gallium Aluminum Arsenide Light Emitting Diode Texas Optoelectronics, Inc. DESCRIPTION FEATURES • • This is a high radiance GaAIAs IR LED optimized for fiber optic applications requiring high power and fast response time. ABSOLUTE MAXIMUM RATINGS
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G00D524
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Untitled
Abstract: No abstract text available
Text: TIES16A Gallium Arsenide Infrared-Emitting Diode |f W Ê W KêJÊ Texas O ptoelectronics, Inc. DESIGNED TO EMIT NEAR-INFRARED RADIENT ENERGY WHEN FORW ARD BIASED • High Output Power . . . 100 m W Min at 25 °C • Hemispherically Shaped 72-Mil-Diameter Chip
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TIES16A
72-Mil-Diameter
G00D524
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Untitled
Abstract: No abstract text available
Text: m m I mi" T°*a‘ TO X 9002 Gallium Alum inum Arsenide _ Light Emitting Diode DESCRIPTION FEATURES This is a high radiance GaAIAs IR LED for applications requiring high power from a point source and fast response time. •
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package-T046
G00D524
IH375)
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