T1P29C Search Results

l1s3

Abstract: T1P29C tip29a es
Contextual Info: IA a T T p o i 7 mb a m T s c s-THonsoN 0 7 e d I ? ^ -— r — • •j f t W ! \N k V {X tS v TIP29 TIP30 TIP29A TtP3°A TIP29B TIP30B fQ J lJ - T1P29C T1P3QC i 67 C 1538 4 ' 1 Ì • D ' ~T~ 3 3 " 0 e! ' - r - 3 3 '" M T ° ° 1 1 ~ E P IT A X IA L - B A S E N P N / P N P

TP30C

Abstract: A 652 tip30c TIP29 TIP29A TIP29B TIP29C TIP30 TIP30A TIP30B
Contextual Info: ÆÂMOS PEC COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS NPN TIP29 TIP29A TIP29B TÍP29C . designed for use in genera! purpose power amplifier and switching applications. FEATURES: * Coilector-Emitter Sustaining Voltage V~,v._r 40V Min - TIP29.TIP30

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

Contextual Info: INTRODUCTION PLASTIC ENCAPSULATED TRAN SISTO RS TRI ACS AND THYRISTO RS This catalogue provides technical descriptions and specifications on Plastic Power Semiconductors manufactured by Texas Instruments. From the earliest days o f transistors Sem iconductor C ircuit Designers have

Contextual Info: PANASONIC INDL/ELEK -CIO 1SE D • 1,132055 QG1D4E1 0 ■ Silicon NPN Power Transistors TO-220 Package Absolute Maximum Ratings Ta=25°C Rem TIP29A T1P29B TIP29C Unit 80 100 V 80 100 V Symbol TIP29 VcBO 40 60 Collector-Emitter Voltage VCEO 40 60 Emitter-Base Voltage

T1P31C

Abstract: b0239c BDXS3 B0241A T1P122 B0243 B0243B T1P-31C T1P120 BDXS3C
Contextual Info: MIN MAX A B C E F G H J 14,42 9,63 3 ,56 K i M N 12,70 - 16.51 10.67 4,83 0 .9 0 1,40 3 ,68 2,79 3,43 0 ,56 14,73 6,35 2,92 DIM o f1 i| L D J g - 1,15 3,75 2,29 2,54 - 2,03 7 3 1,2 4 DEG TP-220 Power Package Transistors NPN Maximum Rating« Type No. Electrical Characteristics (Tas35*C, Unless Otherwise Specified)

TIP308

Abstract: woy transistor transistor tip 30c tip 30 tip 30c tip 147 TRANSISTOR motorola tip29 LSE 0405
Contextual Info: MOT OR OL A SC 12E D 1 b3b7254 o a a s s i b s I XSTR S/ R F • 3 3 - Ö ? PNP ' NPN TIP29 T1P29A TIP29B TIP29C MOTOROLA SEMICONDUCTOR TECHNICAL DATA TIP30 TIP30A TIP30B TIP30C 1 A M PERE POWER TRANSISTORS COMPLEMENTARY SILICON COMPLEMENTARY SILICON PLASTIC

LC02A

Abstract: T1P29C T1P29A T1P29B TIP29 TIP29A TIP29C TIP30 TIP30A TIP30B
Contextual Info: PA N A SO N IC IN D L /E L E K -C IO 12E D ^32052 Silicon NPN Power Transistors QG1D4E1 T -Z Z -C ñ TO-220 Package Absolute Maximum Ratings Ta=25°C Rem Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current " Peak Collector Current

T1P29

Abstract: T1P29B T1P29A
Contextual Info: TIP29, TIP29A, TIP29B, TIP29C NPN SILICON POWER TRANSISTORS Copyright 1997, Pow«r Innovations Limited, UK • Designed for Complementary Use with the TIP30 Series • 30 W at 25°C Case Temperature • 1 A Continuous Collector Current • 3 A Peak Collector Current

T1P29C

Abstract: TIP30C LC02A T1P29B TIP29 TIP29A TIP29C TIP30 TIP30A TIP30B
Contextual Info: P A N A SO N IC IN D L / E L E K -C IO 15E » fc ^ S Ö S E Silicon NPN Power Transistors DD1D4E1 D r-3 3 -o ? TO-220 Package Absolute Maximum Ratings Ta=250C Item Collector-Base Voltage Collector-Eniitter Voltage Emitter-Base Voltage Collector Current "

Contextual Info: T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF PHILIPS INTERNATIONAL SbE D • 711002b 0043452 lib ■ P H I N ' SILICO N EPITAXIAL POW ER TR A NSISTO R S T-33-07 NPN silicon power transistors in a S O T 186 envelope w ith an electrically insulated mounting base,