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    T14L10 Search Results

    T14L10 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Type PDF
    T14L10 Vishay Siliconix Resistor networks Original PDF
    T14L10104E3 Vishay Siliconix Dual-In-Line, 10 Bit Original PDF
    T14L1024A Taiwan Memory Technology 128K x 8 HIGH SPEED CMOS STATIC RAM Original PDF
    T14L1024A-10D Taiwan Memory Technology 128K x 8 HIGH SPEED CMOS STATIC RAM Original PDF
    T14L1024A-10H Taiwan Memory Technology 128K x 8 HIGH SPEED CMOS STATIC RAM Original PDF
    T14L1024A-10J Taiwan Memory Technology 128K x 8 HIGH SPEED CMOS STATIC RAM Original PDF
    T14L1024A-10N Taiwan Memory Technology 128K x 8 HIGH SPEED CMOS STATIC RAM Original PDF
    T14L1024A-10P Taiwan Memory Technology 128K x 8 HIGH SPEED CMOS STATIC RAM Original PDF
    T14L1024A-12J Taiwan Memory Technology 128K x 8 HIGH SPEED CMOS STATIC RAM Original PDF
    T14L1024N Taiwan Memory Technology 128K x 8 HIGH SPEED CMOS STATIC RAM Original PDF
    T14L1024N-10C Taiwan Memory Technology 128K x 8 HIGH SPEED CMOS STATIC RAM Original PDF
    T14L1024N-10H Taiwan Memory Technology 128K x 8 HIGH SPEED CMOS STATIC RAM Original PDF
    T14L1024N-10J Taiwan Memory Technology 128K x 8 HIGH SPEED CMOS STATIC RAM Original PDF
    T14L1024N-10P Taiwan Memory Technology 128K x 8 HIGH SPEED CMOS STATIC RAM Original PDF
    T14L1024N-10W Taiwan Memory Technology 128K x 8 HIGH SPEED CMOS STATIC RAM Original PDF

    T14L10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    T14L1024N

    Abstract: T14L1024N-10C T14L1024N-10H T14L1024N-10J T14L1024N-10P T14L1024N-10W
    Text: tm TE CH T14L1024N SRAM 128K X 8 HIGH SPEED CMOS STATIC RAM FEATURES GENERAL DESCRIPTION • Fast Address Access Times : 10/12/15ns The T14L1024N is a one-megabit density, fast static random access memory organized as 131,072 words by 8 bits. It is designed for


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    PDF T14L1024N 10/12/15ns T14L1024N 110/105/100mA 32thout 36-Ball 8x10mm) T14L1024N-10C T14L1024N-10H T14L1024N-10J T14L1024N-10P T14L1024N-10W

    BI resistor network

    Abstract: 5K10 T14L10 DSA003808
    Text: T14L10 Vishay Techno Thick Film Resistor Networks, Dual-In-Line, 10 Bit APPLICATIONS 10 Bit, R/2R Ladder networks for D/A and A/D converter with bi-polar or CMOS switches. ELECTRICAL SPECIFICATIONS Ladder network accuracy: ± 1 LSB from 0 °C to + 70 °C Ladder network resistance tolerance: ± 2 %


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    PDF T14L10 18-Jul-08 BI resistor network 5K10 T14L10 DSA003808

    T14L1024A

    Abstract: T14L1024A-10D T14L1024A-10H T14L1024A-10J T14L1024A-10N T14L1024A-10P
    Text: tm TE CH Preliminary T14L1024A SRAM 128K X 8 HIGH SPEED CMOS STATIC RAM FEATURES GENERAL DESCRIPTION The T14L1024A is a one-megabit density, fast static random access memory organized as 131,072 • Fast Address Access Times : 10/12/15ns • Single 3.3V ±0.3V power supply


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    PDF T14L1024A T14L1024A 10/12/15ns 110/105/100mA 32-pin times063 T14L1024A-10D T14L1024A-10H T14L1024A-10J T14L1024A-10N T14L1024A-10P

    16 bit r 2r

    Abstract: No abstract text available
    Text: Model T14L10 Vishay Techno Dual-In-Line, 10 Bit R/2R Ladder Networks APPLICATIONS 10 Bit, R/2R Ladder networks for D/A and A/D converter with bi-polar or CMOS switches ELECTRICAL SPECIFICATIONS Ladder Network Accuracy: ± 1 LSB from 0 °C to + 70 °C. Ladder Network Resistance Tolerance: ± 2 %.


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    PDF T14L10 T14L10 01-Aug-05 16 bit r 2r

    Untitled

    Abstract: No abstract text available
    Text: T14L10 Vishay Techno Thick Film Resistor Networks, Dual-In-Line, 10 Bit APPLICATIONS 10 Bit, R/2R Ladder networks for D/A and A/D converter with bi-polar or CMOS switches. ELECTRICAL SPECIFICATIONS Ladder network accuracy: ± 1 LSB from 0 °C to + 70 °C Ladder network resistance tolerance: ± 2 %


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    PDF T14L10 08-Apr-05

    745-030

    Abstract: T14L10
    Text: Model T14L10 Vishay Techno Dual-In-Line, 10 Bit R/2R Ladder Networks APPLICATIONS 10 Bit, R/2R Ladder networks for D/A and A/D converter with bi-polar or CMOS switches ELECTRICAL SPECIFICATIONS Ladder Network Accuracy: ± 1 LSB from 0°C to + 70°C. Ladder Network Resistance Tolerance: ± 2%.


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    PDF T14L10 100PPM/ 21-Dec-99 745-030 T14L10

    T14L1024N

    Abstract: T14L1024N-10H T14L1024N-10J T14L1024N-10P T14L1024N-10W
    Text: tm TE CH T14L1024N SRAM 128K X 8 HIGH SPEED CMOS STATIC RAM FEATURES GENERAL DESCRIPTION ¡EFast Address Access Times : 10/12/15ns The T14L1024N is a one-megabit density, fast static random access memory organized as 131,072 ¡ESingle 3.3V ±0.3V power supply


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    PDF T14L1024N 10/12/15ns T14L1024N 110/105/100mA 32-LEAD 8x20mm) T14L1024N-10H T14L1024N-10J T14L1024N-10P T14L1024N-10W

    Untitled

    Abstract: No abstract text available
    Text: Models T14L10 Vishay Techno Dual-In-Line, 10 Bit R/2R Ladder Networks APPLICATIONS 10 Bit, R/2R Ladder networks for D/A and A/D converter with bi-polar or CMOS switches ELECTRICAL SPECIFICATIONS Ladder Network Accuracy: ± 1 LSB from 0°C to + 70°C. Ladder Network Resistance Tolerance: ± 2%.


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    PDF T14L10 100PPM/ T14L10 23-Sep-99

    T14L10

    Abstract: No abstract text available
    Text: Model T14L10 Vishay Techno Dual-In-Line, 10 Bit R/2R Ladder Networks APPLICATIONS 10 Bit, R/2R Ladder networks for D/A and A/D converter with bi-polar or CMOS switches ELECTRICAL SPECIFICATIONS Ladder Network Accuracy: ± 1 LSB from 0 °C to + 70 °C. Ladder Network Resistance Tolerance: ± 2 %.


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    PDF T14L10 08-Apr-05 T14L10

    T14L1024A

    Abstract: T14L1024A-10J T14L1024A-10P
    Text: tm TE CH Preliminary T14L1024A SRAM 128K X 8 HIGH SPEED CMOS STATIC RAM FEATURES GENERAL DESCRIPTION ¡EFast Address Access Times : 10/12/15ns The T14L1024A is a one-megabit density, fast static random access memory organized as 131,072 ¡ESingle 3.3V ±0.3V power supply


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    PDF T14L1024A 10/12/15ns T14L1024A 110/105/100mA 32-pin203 32-LEAD 8x20mm) T14L1024A-10J T14L1024A-10P

    CS16LV40963

    Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
    Text: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D


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    PDF 32Kx8 LY6264 LY62L64 LY62256 LY62L256 LY62256 128Kx8 64Kx16 LY621024 LY62L1024 CS16LV40963 BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D

    Untitled

    Abstract: No abstract text available
    Text: T14L Vishay Techno 厚膜电阻器网络, 双排,模塑 DIP 特点 • 10 位 , R/2R 梯形网络,用于 D/A 和 A/D 双极转换 器或 CMOS 开关 • 0.190" 4.83 mm 最大座高 • 坚固耐用 , 模塑壳体结构 • 厚膜电阻元件 • 低温度系数 (- 55 ℃至 125 ℃ ) ± 100 ppm/ ℃


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    PDF 2002/95/EC 2011/65/EU 2002/95/ECã 2011/65/EUã JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: T14L Vishay Techno Thick Film Resistor Networks, Dual-In-Line, Molded DIP FEATURES • 10 bit, R/2R ladder networks for D/A and A/D converter with bi-polar or CMOS switches • 0.190" 4.83 mm maximum seated height • Rugged, molded case construction • Thick film resistive elements


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    PDF 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: T14L Vishay Techno Thick Film Resistor Networks, Dual-In-Line, Molded DIP FEATURES • 10 bit, R/2R ladder networks for D/A and A/D converter with bi-polar or CMOS switches • 0.190" 4.83 mm maximum seated height • Rugged, molded case construction • Thick film resistive elements


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    PDF 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: T14L Vishay Techno Thick Film Resistor Networks, Dual-In-Line, Molded DIP FEATURES • 10 bit, R/2R ladder networks for D/A and A/D converter with bi-polar or CMOS switches • 0.190" 4.83 mm maximum seated height • Rugged, molded case construction • Thick film resistive elements


    Original
    PDF 2002/95/EC 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: T14L Vishay Techno Thick Film Resistor Networks, Dual-In-Line, Molded DIP FEATURES • 10 bit, R/2R ladder networks for D/A and A/D converter with bi-polar or CMOS switches • 0.190" 4.83 mm maximum seated height • Rugged, molded case construction • Thick film resistive elements


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    PDF 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: MODEL T14L10 R/2R Ladder Networks D IP , 10 B it A P P L IC A T IO N S 10 Bit, R/2R Ladder networks for D/A and A/D converter with bi-polar or CMOS switches ELE C T R IC A L S P E C IF IC A T IO N S Ladder Network Accuracy: ± 1 LSB from 0 C to + 70 C. Ladder Network Resistance Tolerance: ± 2%.


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    PDF T14L10 100PPM/Â R19/R18 104S2 10Oki 200kS2.

    Untitled

    Abstract: No abstract text available
    Text: MODEL T14L10 TECHNO R/2R Ladder Networks DIP, 10 Bit ▼ APPLICATIONS 4 li% i 10 Bit, R/2R Ladder networks for D/A and A/D converter with bi-polar or CMOS switches ELECTRICAL SPECIFICATIONS Ladder Network Accuracy: ± 1 LSB from 0°C to + 70°C. Ladder Network Resistance Tolerance: ± 2%.


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    PDF T14L10 100PPM/Â R9/R103/R14 R15/R16 R19/R17 R19/R18 10OkQ. 200kQ.

    Untitled

    Abstract: No abstract text available
    Text: A COMPANY MODEL T14L10 R/2R Ladder Networks OF TECHNO DIP, 10 Bit APPLICATIONS 10 Bit, R/2R Ladder networks for D/A and A/D converter with bi-polar or CMOS switches ELECTRICAL SPECIFICATIONS Ladder Network Accuracy: ± 1 LSB from 0°C to + 70°C. Ladder Network Resistance Tolerance: ± 2%.


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    PDF T14L10 100PPM/Â 211/R12 R13/R14 R15/R16 R19/R17 R19/R18 100kQ.

    M8340101

    Abstract: M8340102 capacito
    Text: VISHAY ▼ Table of Contents Vishay Techno C o n te n ts . 1 Alphabetical In d e x .2


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    PDF M83401/04, M8340101 M8340102; 19-Mar-01 M8340102 capacito

    XO-43B

    Abstract: No abstract text available
    Text: SURFACE MOUNT INDEX Oscillators and Crystals XT39P, XT 39P -1, surface mount crystal, m oulded.6-7 XT49M , surface mount crystal, low profile.9 XO SM -52B, BE, surface mount, hybrid crystal.12


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    PDF XT39P, XT49M ST-22, SL-1206, XT-38-T, XT-49M, XT-49S, XT-49U, XO-43B

    hy 214 A Display

    Abstract: MIL-R-26 apd 128*128 APD-256M026-1 APD-256M026 APD-480M021-1 irf 346
    Text: A COMPANY OF. A lphabetical Index P roducts Only 7, 8, surface mount, hybrid chip th e rm istors.190 10, 20, 30, 40, 50, 60, NTC therm istors.202 300, printed circuit board connectors.293 IB , uncoated disc thermistors, material "B ". 192


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    PDF ABG-12205, APD-016M040, APD-064M033, APD-080M025-1, APD-128G128, XO-43B, XO-52B, XO-53B, XO-54B, XOSM-52B, hy 214 A Display MIL-R-26 apd 128*128 APD-256M026-1 APD-256M026 APD-480M021-1 irf 346

    Untitled

    Abstract: No abstract text available
    Text: GENERAL INDEX General Index. 2-3 Surface Mount Index. 4


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    PDF XT39P, XT39P-1, XT38T, XT49M,

    DALE RESISTOR NETWORKS

    Abstract: Mil-T-23648 m8340102 APD-256M026-1 APD-222G007 CRCW DALE APD-256M026 APD-480M021-1
    Text: A C O M PA N Ÿ OF G eneral Index/S urface Mount Index T hick Film Resistor N etw orks, Resistor/Capacitor Netw orks, C apacitor N etw o rks, Ladder N etw orks and Custom Phone: 402 371 -0080 Dale Phone: (818) 781-1642 Dale, Techno Division M83401/04, 05,06, 07, 08, 09, resistor


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    PDF M83401/04, MIL-R-83401, M8340101, M8340102, MDM14, MDM16, DFM14, DALE RESISTOR NETWORKS Mil-T-23648 m8340102 APD-256M026-1 APD-222G007 CRCW DALE APD-256M026 APD-480M021-1