sublvds to lvds
Abstract: sub-lvds sublvds TX B0177 link budget calculation 3 POSITION TOGGLE SWITCH 6 pin s0224 sublvds SLLS836 SN65LVDS305
Text: SN65LVDS310 www.ti.com SLLS836 – MAY 2007 PROGRAMMABLE 27-BIT SERIAL-TO-PARALLEL RECEIVER FEATURES • • • • • • • • • • • Serial Interface Technology Compatible With FlatLink 3G Transmitters E.g., SN65LVDS305 or SN65LVDS307 Supports Video Interfaces up to 24-Bit RGB
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SN65LVDS310
SLLS836
27-BIT
SN65LVDS305
SN65LVDS307)
24-Bit
405-Mbps
sublvds to lvds
sub-lvds
sublvds TX
B0177
link budget calculation
3 POSITION TOGGLE SWITCH 6 pin
s0224
sublvds
SLLS836
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T0-254AA
Abstract: No abstract text available
Text: Case Outline and Dimensions - T0-254AA Standard & Low Ohmic 0.12 [.005] 6.60 [.260] 6.32 [.249] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 1.27 [.050] 1.02 [.040] A 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 1 C 2 3 17.40 [.685] 16.89 [.665]
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T0-254AA
5M-1994.
O-254AA.
T0-254AA
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Untitled
Abstract: No abstract text available
Text: SN65LVDS308 www.ti.com SLLS835 – MAY 2007 PROGRAMMABLE 27-BIT PARALLEL-TO-SERIAL RECEIVER FEATURES • • • • • • • • • • • FlatLink 3G Serial Interface Technology Compatible With FlatLink 3G Transmitters Such as SN65LVDS307 Supports Video Interfaces up to 24-Bit RGB
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SN65LVDS308
SLLS835
27-BIT
SN65LVDS307
24-Bit
810-Mbps
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Untitled
Abstract: No abstract text available
Text: SN65LVDS310 www.ti.com SLLS836 – MAY 2007 PROGRAMMABLE 27-BIT SERIAL-TO-PARALLEL RECEIVER FEATURES • • • • • • • • • • • Serial Interface Technology Compatible With FlatLink 3G Transmitters E.g., SN65LVDS305 or SN65LVDS307 Supports Video Interfaces up to 24-Bit RGB
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SN65LVDS310
SLLS836
27-BIT
SN65LVDS305
SN65LVDS307)
24-Bit
405-Mbps
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sublvds TX
Abstract: SN65LVDS307 SN65LVDS308 sublvds
Text: SN65LVDS308 www.ti.com SLLS835 – MAY 2007 PROGRAMMABLE 27-BIT PARALLEL-TO-SERIAL RECEIVER FEATURES • • • • • • • • • • • FlatLink 3G Serial Interface Technology Compatible With FlatLink 3G Transmitters Such as SN65LVDS307 Supports Video Interfaces up to 24-Bit RGB
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SN65LVDS308
SLLS835
27-BIT
SN65LVDS307
24-Bit
810-Mbps
sublvds TX
SN65LVDS307
SN65LVDS308
sublvds
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IRHM9250
Abstract: IRHM93250 JANSF2N7423 JANSR2N7423
Text: PD - 91299C RADIATION HARDENED POWER MOSFET THRU-HOLE T0-254AA IRHM9250 JANSR2N7423 200V, P-CHANNEL REF: MIL-PRF-19500/662 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM9250 100K Rads (Si) IRHM93250 300K Rads (Si) RDS(on) I D
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91299C
T0-254AA)
IRHM9250
JANSR2N7423
MIL-PRF-19500/662
IRHM93250
JANSF2N7423
O-254AA.
IRHM9250
IRHM93250
JANSF2N7423
JANSR2N7423
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Untitled
Abstract: No abstract text available
Text: PD - 90713E IRHM7230 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE T0-254AA RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM7230 100K Rads (Si) IRHM3230 300K Rads (Si) IRHM4230 600K Rads (Si) IRHM8230 1000K Rads (Si)
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90713E
IRHM7230
T0-254AA)
IRHM3230
IRHM4230
IRHM8230
1000K
O-254AA
IRHM57163SED
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Untitled
Abstract: No abstract text available
Text: PD-91299E IRHM9250 JANSR2N7423 200V, P-CHANNEL REF: MIL-PRF-19500/662 RADIATION HARDENED POWER MOSFET THRU-HOLE T0-254AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM9250 IRHM93250 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on)
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PD-91299E
IRHM9250
JANSR2N7423
MIL-PRF-19500/662
T0-254AA)
IRHM93250
JANSF2N7423
reduces54AA.
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T0254AA
Abstract: No abstract text available
Text: 013^13^ 0 0 0 2 ^ 5 7Tb SflE D SEMTECH CORP POWER MOSFET IN HERMETIC ISOLATED T0254AA PACKAGE SM2F151* SM2F351* SM2F251* SM2F451* These devices offer the latest ruggedized M O SFET transistor die mounted in isolated and hermetically sealed metal packages. The standard M O SFET characteristics of very low
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T0254AA
SM2F151*
SM2F351*
SM2F251*
SM2F451*
T0254AA
T0258AA
FT0258AA
HDS100
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AGE Module
Abstract: No abstract text available
Text: MilitaryAerospace Division Military-Aerospace Division PowerM OS IV herm etic M O SFET s BVdss V R d s(O N ) lD(C on t) (/> ) PD (W ) ^is^(pF) Q g(nC ) P ack age Flat pack (FN) T02S8 (HN ) T0254 (CN) Pow er m od ules for high rei applications Sem elab’s 4th Generation M O SFE T s, bipolar
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T02S8
T0254
T0257
AGE Module
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T0247
Abstract: sml1001rAN SML1001RBN
Text: SEMELAB pie SELECTOR GUIDE VDSS RD SS on ID Pd T03 T0247 T0258 T03G100 T0247 T0247 T0258 D3PAK SOT227 MPack F-Pack T03 T0247 T0254 T03 T0220SM T0247 T0254 I T254 T0257(l) T03 T0247 T0254 T0257 T0220 T03 T0247 T0254 (I) T0254 T0257 T0257(l) T0220 SOT227 T0264
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SML1001R3AN
SML1001R3BN
SML1001R3HN
SML1001RAN
SML1001RBN
SML1001RBVR
SML1001RHN
SML1001RSVR
SML10025JVR
SML10025MVR
T0247
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6849a
Abstract: SC 200 T 2n7227
Text: T emic S e m i c o n d u c t o r s T0254 T0257 N-Channel Devices Military Faftk ‘ Î fi ? ''* r ' \.Vt' f i l V(BRiDSS<V) Hermetic Packages and Industry-Standard Military MOSFETs IRFML50 2N7075 2N7085 | 2N7085 | 2N7224 a IR FM I50 2N7081 2N7081 [RFM250
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T0254
T0257
IRFML50
2N7085
2N7081
RFM250
IRFM250
2N7086
RFM350
RFM450
6849a
SC 200 T
2n7227
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APT801R2DN
Abstract: APT5085DN
Text: ADVANCED POWER TECHNOLOGY Tfl Dlf| D E S T E D T GODOOIE T-3^"/S P For Additional Information Contact APT Sales Representatives O r The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1001RCN APT1001R2CN APT9090CN APT901RCN
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APT1001RCN
APT1001R2CN
APT9090CN
APT901RCN
APT8075CN
APT8090CN
APT6035CN
APT6040CN
APT5530CN
APT5532CN
APT801R2DN
APT5085DN
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Untitled
Abstract: No abstract text available
Text: International I@ R Rectifier Provisional Data Sheet No. PD-9.1223B REPETITIVE AVALANCHE AND dv/dt RATED IRHM7450SE HEXFET TRAN SISTO R N-CHANNEL S IN G L E E V E N T E F F E C T S E E R A D H A R D Product Summary 500 Volt, 0.51», (SEE) RAD HARD HEXFET
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1223B
IRHM7450SE
46SS452
DD25457
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Untitled
Abstract: No abstract text available
Text: SEMTECH CORP 5ÔE ]> • 013113*1 DUAL SCHOTTKY RECTIFIERS IN HERMETIC ISOLATED T0257AB PACKAGE 0003011 Ô36 SM8S42* These devices offer two Schottky rectifiers mounted in isolated and hermetically sealed packages. Use of Beryllia substrates ensures the lowest possible thermal impedance,
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T0257AB
SM8S42*
15054AA
T0258AA
FT0258AA
HDS100
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY SCHOTTKY RECTIFIERS PACKAGE 2 LEAD HERMETIC &T\ DEVICE TYPE !0 avg AMPS TC=100°C PEAK INVERSE VOLTAGE VOLTS MAX VF @ *FM = 'O (avg) VOLTS 125°C MAX REVERSE CURRENT AMPS 125° C SPD735 7.0 35 0.75 0.015 SPD745 7.0 45 0.75 0.015 SPD1035 10.0 35
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SPD1035
SPD1045
SPD1635
SPD1645
SPD735
SPD745
SPD1535C
SPD3020C
SPD3035C
SPD3045C
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Untitled
Abstract: No abstract text available
Text: SflE » SEMTECH CORP • 6 1 3 ^ 1 3 ^ 0 0 0 3 0 H 3 Bbl « S E T DUAL SCHOTTKY RECTIFIERS IN HERMETIC ISOLATED T0258AA PACKAGE SM3S42* These devices offer two Schottky rectifiers mounted in isolated and hermetically sealed packages. Use of Beryllia substrates ensures the lowest possible thermal impedance,
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T0258AA
SM3S42*
T0258AA
FT0258AA
HDS100
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Untitled
Abstract: No abstract text available
Text: h is s e ma i c or n dr u c t o r FSF450D, FSF450R " " m y m a m w m m Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Description • 9A, 500V, Tqs ^o N = 0.600ÎÎ The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSF450D,
FSF450R
100kRADS
1-800-4-HARRIS
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rf 157
Abstract: No abstract text available
Text: Package outlines Package outlines and dimensions Sm artpack packages 4,25 "*i ^ ^ 24 MWHH 44 10 10 -M H 24 44 XT TT 1 H6 . 57 10 -es- K lH -87- C2 . 0,8 tzs. 10 I 113. C3 1.75 rn — 28 — èO 90 LÈ5 i=; 5! n o n o n o . i . o .n.o.n LJ LJ LJ LJ LJ 10 l -
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-es-87K
rf 157
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50n06
Abstract: No abstract text available
Text: OM60N06SA OM60N05SA OM50N06ST OM50N06SA QM50N05SA QM50N05ST LOW VOLTAGE, LOW RDS on POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V And 60V Ultra Low RDs(on) Power MOSFETs In TO-257 And TO-254 Isolated Packages FEATURES • • • • • Isolated Hermetic Metal Packages
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OM60N06SA
OM60N05SA
OM50N06ST
OM50N06SA
QM50N05SA
QM50N05ST
O-257
O-254
MIL-S-19500,
50n06
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Untitled
Abstract: No abstract text available
Text: FSJ264D, FSJ264R 39 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features • Description 33A, 250V, rDS 0N = 0.080Q • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects
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FSJ264D,
FSJ264R
1-800-4-HARRIS
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H188
Abstract: No abstract text available
Text: Data Sheet No. PD-9.887 I«R INTERNATIONAL RECTIFIER AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTORS IRHM7054 IRHM8054 Z N-CHANNEL MEGA RAD HARO Product Summary 60 Volt, 0.027», MEGA RAD HARD HEXFET International Rectifier's M E G A RAD H A R D Technology HEXFETs
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IRHM7054
IRHM8054
1x106
1x105
MIL-STD-750,
H-190
H188
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Untitled
Abstract: No abstract text available
Text: JANSR2N7298 Formerly FRF450R4 Semiconductor Data Sheet Radiation Hardened, N-Channel Power MOSFET The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings
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JANSR2N7298
FRF450R4
1000K
1-800-4-HARRIS
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IRFG1Z0
Abstract: irfh25 irfg9110 IRFH150
Text: Government/ Space Products international ^ R e c tifie r Power MOSFETS High Reliability TO-258 - K N-Channel Part Number Iq Continuous Drain Current 25° Case Amps P q Max Power Dissipation (Watts) Case Outline Number (5) Notes 80 70 250 H20 (4) 30 30 15
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O-258
IRFV360
IRFV460
O-258
IRFH150
IRFH250
IRFH350
IRFH450
O-210AC
IRFG110
IRFG1Z0
irfh25
irfg9110
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