SP6-P
Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.
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10F-A,
SP6-P
N-channel MOSFET 800v 50a to-247
SMPS 1000w IGBT REFERENCE DESIGN
DRF1400
45A, 1200v n-channel npt series igbt
APTES80DA120C3G
APT35DL120HJ
semiconductors cross reference
IGBT triple modules 100A
2000W mosfet power inverter
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CS5170
Abstract: mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control
Text: SGD501/D REV 8, January 5, 2002 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section EFFECTIVE DATE: JANUARY 5, 2002 General Information Elimination Of Ozone Depleting Chemicals . . . .
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SGD501/D
Janua667
CS5170
mps2112
MPS2112ZL1
100A 300V IGBT
MC3346P
CS4124YDW16
ON Semiconductor PRICE BOOK
12V to 220V smps inverter
bd234
igbt ac motor speed control
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1500w audio amplifier circuit
Abstract: Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G
Text: SGD501/D REV 19, October 9, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: OCTOBER 9, 2004 General Information ON Semiconductor Standard Policies
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SGD501/D
74VCX16373DT
74VCX16373DTR
74VCX16374DT
16BIT
74VCX16374DTR
80SQ045N
80SQ045NRL
1500w audio amplifier circuit
Schottky Diode 80V 6A
1500w PWM 220v
C106MG
marking code SS SOT23
tl494cn inverter datasheet
smps 1500W
MMSZ5231BT1G
dc 220v motor speed control circuit with scr
NCP1200P60G
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SOT-227 lead frame
Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series
Text: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi’s High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic
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MIL-PRF-19500,
sO-268
O-220
O-220
O-247
O-264
OT-227
SOT-227 lead frame
5kw smps full bridge S.M.P.S
PLAD15KP
APT10026L2FLLG
5kw SMPS full bridge
Fast Recovery Rectifiers mx gp 043
SMBx6.0A
DO215AA
PFC 1.5kw
1.5ke series
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LE79Q2281
Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security
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ANA 618
Abstract: voltage regulator ana 618 NZSMB15CAT3 GP 809 DIODE 1500w audio amplifier circuit SPEED CONTROL of DC MOTOR tda1085c CS5170 ANA 618* voltage regulator 12 VOLT 2 AMP smps diode 1n4007 MIC MAKE
Text: SGD501/D REV 13, April 12, 2003 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION - Please see General Information Section EFFECTIVE DATE: APRIL 12, 2003 General Information Elimination Of Ozone Depleting Chemicals . . . .
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SGD501/D
ANA 618
voltage regulator ana 618
NZSMB15CAT3
GP 809 DIODE
1500w audio amplifier circuit
SPEED CONTROL of DC MOTOR tda1085c
CS5170
ANA 618* voltage regulator
12 VOLT 2 AMP smps
diode 1n4007 MIC MAKE
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T0247
Abstract: 8N60M SW8600 Z357 L4080B l3540 L5545 L5050BN L3580 M/ve09 240
Text: Power Management Division Please note that our 4th Generation power MOSFETs are currently available in Europe only. T0264 Power Management Division PowerMOS IV plastic power M OSFETs S e m e la b ’s P ow erM O S I V 1M range offers VMOS switching speeds, very low on-resiscance,
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T0264
SML3565BN
L3580BN
T0247
TG247
SMU004RKN
T0220
T0247
8N60M
SW8600
Z357
L4080B
l3540
L5545
L5050BN
L3580
M/ve09 240
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T0247
Abstract: sml1001rAN SML1001RBN
Text: SEMELAB pie SELECTOR GUIDE VDSS RD SS on ID Pd T03 T0247 T0258 T03G100 T0247 T0247 T0258 D3PAK SOT227 MPack F-Pack T03 T0247 T0254 T03 T0220SM T0247 T0254 I T254 T0257(l) T03 T0247 T0254 T0257 T0220 T03 T0247 T0254 (I) T0254 T0257 T0257(l) T0220 SOT227 T0264
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SML1001R3AN
SML1001R3BN
SML1001R3HN
SML1001RAN
SML1001RBN
SML1001RBVR
SML1001RHN
SML1001RSVR
SML10025JVR
SML10025MVR
T0247
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ITH60C06
Abstract: No abstract text available
Text: ITH60C06 M ITEL Powerline N-Channel IGBT With Ultrafast Diode SEMICONDUCTOR Advance Inform ation DS5048-1.1 O ctober 1998 T h e IT H 6 0 C 0 6 is a v e ry ro b u s t n -c h a n n e l, enhancem ent mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range
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ITH60C06
DS5048-1
ITH60C06
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ITH60C06
Abstract: No abstract text available
Text: ITH60C06 M ITEL Powerline N-Channel IGBT With Ultrafast Diode SEMICONDUCTOR A dvance Inform ation DS5048-1.2 December 1998 T h e IT H 6 0 C 0 6 is a v e ry r o b u s t n -c h a n n e l, e n h a n c e m e n t m ode in su la te d gate b ip o la r tra n s is to r
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ITH60C06
DS5048-1
ITH60C06
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rf 157
Abstract: No abstract text available
Text: Package outlines Package outlines and dimensions Sm artpack packages 4,25 "*i ^ ^ 24 MWHH 44 10 10 -M H 24 44 XT TT 1 H6 . 57 10 -es- K lH -87- C2 . 0,8 tzs. 10 I 113. C3 1.75 rn — 28 — èO 90 LÈ5 i=; 5! n o n o n o . i . o .n.o.n LJ LJ LJ LJ LJ 10 l -
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-es-87K
rf 157
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Diode D25 N10 R
Abstract: Diode D25 N10 P
Text: XYS HiPerFET Power MOSFETs IXFK100N10 IXFN150 N10 v ¥ DSS ^D25 P DS on = = = 100 V 100/150 A 12 mQ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr K P relim inary data TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK
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IXFK100N10
IXFN150
O-264
OT-227
E153432
Diode D25 N10 R
Diode D25 N10 P
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TBD40
Abstract: ixfk73n30
Text: HiPerFET Power MOSFETs IXFK 73 N 30 IXFN 73 N 30 p V DSS ^D25 300 V 300 V 73 A 73 A DS on 45 mfl 45 mfl N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN v DSS Tj = 25°C to 150°C
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IXFK73N30
IXFN73N30
O-264
OT-227
E153432
TBD40
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ITS35C12
Abstract: ITS35C12T T0264
Text: ITS35C12 M ITEL Powerline N-Channel IGBTWith Ultrafast Diode SEMICONDUCTOR Advance Inform ation Supersedes Septem ber 1997 version, DS4754 - 2.1 The ITS35C12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage
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ITS35C12
DS4754
ITS35C12
ITS35C12T
T0264
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Untitled
Abstract: No abstract text available
Text: A dvanced P o w er Te c h n o l o g y ' A P T 5 0 1 0 LVFR 500V POWER MOSV 47A 0.100Í2 FREDFET Power MOS V is a new generation of high voltage N-Channei enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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O-264
APT5010LVFR
T0264AA
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Untitled
Abstract: No abstract text available
Text: S i GEC P L ES SE Y SEPTEMBER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4754-2.1 ITS35C12 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS35C12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage
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DS4754-2
ITS35C12
ITS35C12
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T0-264
Abstract: ITS35C12T
Text: ITS35C12 M ITEL Powerline N-Channel IGBTWith Ultrafast Diode SEMICONDUCTOR Advance Inform ation Supersedes Septem ber 1997 version, DS4754 - 2.1 The ITS35C12 is a robust n-channel, enhancem ent m ode insulated gate bipolar tra n sisto r IGBT designed fo r
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ITS35C12
DS4754
ITS35C12
T0-264
ITS35C12T
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si6045
Abstract: No abstract text available
Text: BHXYS Advanced Technical Information Hi PerFAST IGBT IXGK 120N60B IXGX 120N60B V CES ^C25 V CE sat Symbol Test Conditions Maximum Ratings T j = 25° C to 150° C T,J = 25° C to 150° C; FL. = 1 MQ üb 600 600 V V Continuous Transient +20 ±30 V V L.
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120N60B
120N60B
PLUS247TM
O-264
B2-167
si6045
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sml6027hvr
Abstract: sml6030avr
Text: SEMELAB pie SELECTOR GUIDE Type_No Technology SML601R3CN SML601R3GN SML601R3KN SML601R6AN SML601R6BN SML601R6CN SML601R6GN SML601R6KN SML6025BVR SML6027HVR SML6030AVR SML6030BN SML6030BVR SML6033BN SML6035AVR SML6035BVR SML6035HVR SML6040AN SML6040BN SML6040BVR
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SML601R3CN
SML601R3GN
SML601R3KN
SML601R6AN
SML601R6BN
SML601R6CN
SML601R6GN
SML601R6KN
SML6025BVR
SML6027HVR
sml6030avr
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Untitled
Abstract: No abstract text available
Text: M ITEL ITZ35C12 Powerline N-Channel IGBT With Ultrafast Diode SEMICONDUCTOR A dvance Inform ation DS5073 - 1.1 February 1999 The ITZ35C12 is a very robust non punch through nchannel, enhan cem ent m ode insulated gate bipolar transistor IGBT designed for low power dissipation in a
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ITZ35C12
DS5073
ITZ35C12
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100N25
Abstract: No abstract text available
Text: □ IXYS Advanced Technical Information IXFX 100N25 IXFK 100N25 HiPerFET Power MOSFETs V DSS = 250 V* ID25 = 100 A DS on Single MOSFET Die Maximum Ratings PLUS 247™ (IXFX) TestConditions V Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i 250 250
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100N25
100N25
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40N60
Abstract: 43N60 g 40n60
Text: HiPerFET Power MOSFET IXFN IXFN IXFK IXFK Single M O S FE T Die 43N60 40N60 43N60 40N60 v DSS ^D25 600V 600V 600V 600V 43A 40A 43A 40A D DS on 0.130 0.150 0.130 0.150 200ns 200ns 200ns 200ns TO-264 AA (IXFK) ?D Symbol Test Conditions Maximum Ratings IXFK
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43N60
40N60
40N60
200ns
200ns
O-264
43N60
g 40n60
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ITZ35C12
Abstract: No abstract text available
Text: ITZ35C12 M ITEL Powerline N-Channel IGBT With Ultrafast Diode SEMICONDUCTOR A dvance Inform ation DS5073 - 1.1 February 1999 The ITZ35C12 is a very robust non punch through nchannel, enhancem ent mode insulated gate bipolar transistor IGBT designed for low power dissipation in a
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ITZ35C12
DS5073
ITZ35C12
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2N6801-SM
Abstract: BFC49
Text: SEMELAB pic Type_No 2N6800SM 2N6801 2N6801-SM 2N6801LCC4 2N6802 2N6802SM 2N6845 2N6847 2N6849 2N6849L 2N6851 2N7000 2N7218 2N7219 2N7221 2N72220 2N7224 2N7225 2N7227 2N7227 2N7228 2N7228 2N7236 2N7237 BC264 BFC10 BFC11 BFC12 BFC13 BFC14 BFC15 BFC16 BFC17 BFC18
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2N6800SM
2N6801
2N6801-SM
2N6801LCC4
2N6802
2N6802SM
2N6845
2N6847
2N6849
2N6849L
BFC49
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