Untitled
Abstract: No abstract text available
Text: IRLI640G, SiHLI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4V and 5 V
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Original
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PDF
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IRLI640G,
SiHLI640G
O-220
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRLI640G, SiHLI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4V and 5 V
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Original
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PDF
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IRLI640G,
SiHLI640G
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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IRLI640G
Abstract: SiHLI640G SiHLI640G-E3
Text: IRLI640G, SiHLI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4V and 5 V
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Original
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PDF
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IRLI640G,
SiHLI640G
O-220
18-Jul-08
IRLI640G
SiHLI640G-E3
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Untitled
Abstract: No abstract text available
Text: IRLI640G_RC, SiHLI640G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Original
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PDF
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IRLI640G
SiHLI640G
AN609,
CONFIGUp-10
3123m
1402m
4920m
6834m
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Untitled
Abstract: No abstract text available
Text: IRLI640G, SiHLI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4V and 5 V
|
Original
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PDF
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IRLI640G,
SiHLI640G
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
IRLI640G
Abstract: part marking ab SiHLI640G SiHLI640G-E3
Text: IRLI640G, SiHLI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4V and 5 V
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Original
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PDF
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IRLI640G,
SiHLI640G
O-220
18-Jul-08
IRLI640G
part marking ab
SiHLI640G-E3
|
Untitled
Abstract: No abstract text available
Text: IRLI640G, SiHLI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4V and 5 V
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Original
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PDF
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IRLI640G,
SiHLI640G
O-220
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: IRLI640G, SiHLI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4V and 5 V
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Original
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PDF
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IRLI640G,
SiHLI640G
O-220
11-Mar-11
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