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    Vishay Siliconix IRFZ48L

    MOSFET N-CH 60V 50A TO262-3
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    IRFZ48L Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRFZ48L International Rectifier HEXFET Power MOSFET Original PDF
    IRFZ48L International Rectifier HEXFET Power MOSFET Original PDF
    IRFZ48L Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 50A TO-262 Original PDF

    IRFZ48L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFZ48

    Abstract: IRFZ48L IRFZ48S IRFZ48STRL SiHFZ48 SiHFZ48L-E3 SiHFZ48S SiHFZ48S-E3 SiHFZ48STL
    Text: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Qg Max. (nC) 110 Qgs (nC) 29 • • • • • • Qgd (nC) 36 DESCRIPTION VDS (V) 60 RDS(on) (Ω) VGS = 10 V Configuration 0.018 Single D G G D S Available RoHS*


    Original     		PDF IRFZ48S, IRFZ48L, SiHFZ48S SiHFZ48L 18-Jul-08 IRFZ48 IRFZ48L IRFZ48S IRFZ48STRL SiHFZ48 SiHFZ48L-E3 SiHFZ48S-E3 SiHFZ48STL

    Untitled

    Abstract: No abstract text available
    Text: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ48S, SiHFZ48S)


    Original     		PDF IRFZ48S, IRFZ48L, SiHFZ48S SiHFZ48L 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ48S, SiHFZ48S)


    Original     		PDF IRFZ48S, IRFZ48L, SiHFZ48S SiHFZ48L 2002/95/EC 2002/95/EC.

    IRFZ48L

    Abstract: IRFZ48S IRFZ48STRL SiHFZ48L-E3 SiHFZ48S SiHFZ48S-E3 SiHFZ48STL
    Text: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Qg Max. (nC) 110 Qgs (nC) 29 • • • • • • Qgd (nC) 36 DESCRIPTION VDS (V) 60 RDS(on) (Ω) VGS = 10 V Configuration 0.018 Single D G Available RoHS* COMPLIANT


    Original     		PDF IRFZ48S, IRFZ48L, SiHFZ48S SiHFZ48L 18-Jul-08 IRFZ48L IRFZ48S IRFZ48STRL SiHFZ48L-E3 SiHFZ48S-E3 SiHFZ48STL

    Untitled

    Abstract: No abstract text available
    Text: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ48S, SiHFZ48S)


    Original     		PDF IRFZ48S, IRFZ48L, SiHFZ48S SiHFZ48L 2002/95/EC 2011/65/EU

    Untitled

    Abstract: No abstract text available
    Text: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ48S, SiHFZ48S)


    Original     		PDF IRFZ48S, IRFZ48L, SiHFZ48S SiHFZ48L 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) () VGS = 10 V 0.018 Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single D2PAK (TO-263) G D


    Original     		PDF IRFZ48S, IRFZ48L, SiHFZ48S SiHFZ48L O-263) O-262) 2002/95/EC. 2002/95/EC

    AN-994

    Abstract: IRFZ48 IRFZ48L IRFZ48S
    Text: PD - 9.894A IRFZ48S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ48S Low-profile through-hole (IRFZ48L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.018Ω G ID = 50A† S Description Third Generation HEXFETs from International Rectifier


    Original     		PDF IRFZ48S/L IRFZ48S) IRFZ48L) 12-Mar-07 AN-994 IRFZ48 IRFZ48L IRFZ48S

    AN-994

    Abstract: IRFZ48 IRFZ48L IRFZ48S
    Text: PD - 9.894A IRFZ48S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ48S Low-profile through-hole (IRFZ48L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.018Ω G ID = 50A† S Description Third Generation HEXFETs from International Rectifier


    Original     		PDF IRFZ48S/L IRFZ48S) IRFZ48L) AN-994 IRFZ48 IRFZ48L IRFZ48S

    AN-994

    Abstract: IRFZ48 IRFZ48L IRFZ48S
    Text: PD - 9.894A IRFZ48S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ48S Low-profile through-hole (IRFZ48L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.018Ω G ID = 50A† S Description Third Generation HEXFETs from International Rectifier


    Original     		PDF IRFZ48S/L IRFZ48S) IRFZ48L) AN-994 IRFZ48 IRFZ48L IRFZ48S

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.894A IRFZ48S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ48S Low-profile through-hole (IRFZ48L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.018Ω G ID = 50A† S Description Third Generation HEXFETs from International Rectifier


    Original     		PDF IRFZ48S/L IRFZ48S) IRFZ48L) 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRFZ48S_RC, IRFZ48L_RC, SiHFZ48S_RC, SiHFZ48L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF IRFZ48S IRFZ48L SiHFZ48S SiHFZ48L AN609, THERMALiHFZ48S 4540m 9402m 2442m

    IEC 269-5

    Abstract: No abstract text available
    Text: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 0.018 110 29 36 Single D DESCRIPTION S Third generation Power MOSFETs from Vishay utilize


    Original     		PDF IRFZ48S, IRFZ48L, SiHFZ48S SiHFZ48L 2002/95/EC 18-Jul-08 IEC 269-5

    Untitled

    Abstract: No abstract text available
    Text: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Qg Max. (nC) 110 Qgs (nC) 29 • • • • • • Qgd (nC) 36 DESCRIPTION VDS (V) 60 RDS(on) (Ω) VGS = 10 V Configuration 0.018 Single D G Available RoHS* COMPLIANT


    Original     		PDF IRFZ48S, IRFZ48L, SiHFZ48S SiHFZ48L IRFZ48S/SiHFZ48S) IRFZ48L/SiHFZ48L) 12-Mar-07