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    Vishay Siliconix SIHFS11N50A-GE3

    MOSFET N-CH 500V 11A TO263
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    DigiKey SIHFS11N50A-GE3 Reel 1,000
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    • 1000 $0.97425
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    Vishay Intertechnologies SIHFS11N50A-GE3

    MOSFET N-CHANNEL 500V - Tape and Reel (Alt: SIHFS11N50A-GE3)
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    Avnet Americas SIHFS11N50A-GE3 Reel 8 Weeks 1,000
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    Mouser Electronics SIHFS11N50A-GE3
    • 1 $2.05
    • 10 $1.71
    • 100 $1.36
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    EBV Elektronik SIHFS11N50A-GE3 9 Weeks 50
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    SIHFS11N50A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIHFS11N50A-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 11A TO263 Original PDF

    SIHFS11N50A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFS11N50A

    Abstract: SiHFS11N50A SiHFS11N50A-E3 irfs11n50apbf
    Text: IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.52 52 Qgs (nC) 13 Qgd (nC) 18 Configuration Single D D2PAK (TO-263) • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF IRFS11N50A, SiHFS11N50A O-263) 2002/95/EC 11-Mar-11 IRFS11N50A SiHFS11N50A-E3 irfs11n50apbf

    Untitled

    Abstract: No abstract text available
    Text: IRFS11N50A, SiHFS11N50A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Available Ruggedness • Fully Characterized Capacitance


    Original     		PDF IRFS11N50A, SiHFS11N50A O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRFS11N50A_RC, SiHFS11N50A_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF IRFS11N50A SiHFS11N50A AN609, 5126m 6185m 3182m 5507m 4788m

    IRFS11N50APBF

    Abstract: IRFS11N50A SiHFS11N50A SiHFS11N50A-E3
    Text: IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.52 Qg (Max.) (nC) 52 Qgs (nC) 13 Qgd (nC) 18 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRFS11N50A, SiHFS11N50A O-263) 18-Jul-08 IRFS11N50APBF IRFS11N50A SiHFS11N50A-E3

    IRFS11N50A

    Abstract: SiHFS11N50A SiHFS11N50A-E3 irfs11n50apbf
    Text: IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.52 Qg (Max.) (nC) 52 Qgs (nC) 13 Qgd (nC) 18 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*


    Original     		PDF IRFS11N50A, SiHFS11N50A O-263) 18-Jul-08 IRFS11N50A SiHFS11N50A-E3 irfs11n50apbf

    Untitled

    Abstract: No abstract text available
    Text: IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.52 52 Qgs (nC) 13 Qgd (nC) 18 Configuration Single D D2PAK (TO-263) • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF IRFS11N50A, SiHFS11N50A O-263) 2002/95/EC 11-Mar-11

    S10 diode

    Abstract: No abstract text available
    Text: IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.52 52 Qgs (nC) 13 Qgd (nC) 18 Configuration Single D D2PAK (TO-263) • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF IRFS11N50A, SiHFS11N50A O-263) 2002/95/EC 18-Jul-08 S10 diode

    Untitled

    Abstract: No abstract text available
    Text: IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.52 52 Qgs (nC) 13 Qgd (nC) 18 Configuration Single D D2PAK (TO-263) • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF IRFS11N50A, SiHFS11N50A O-263) 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRFS11N50APBF

    Abstract: No abstract text available
    Text: IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.52 52 Qgs (nC) 13 Qgd (nC) 18 Configuration Single D D2PAK (TO-263) • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF IRFS11N50A, SiHFS11N50A O-263) 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFS11N50APBF

    Untitled

    Abstract: No abstract text available
    Text: IRFS11N50A, SiHFS11N50A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Available Ruggedness • Fully Characterized Capacitance


    Original     		PDF IRFS11N50A, SiHFS11N50A O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    IRFS11N50APBF

    Abstract: No abstract text available
    Text: IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.52 52 Qgs (nC) 13 Qgd (nC) 18 Configuration Single D D2PAK (TO-263) • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF IRFS11N50A, SiHFS11N50A O-263) 2002/95/EC 11-Mar-11 IRFS11N50APBF