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    Untitled

    Abstract: No abstract text available
    Text: IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 8.4 Qgd (nC) 50 Configuration Single D RoHS* COMPLIANT Third Generation Power MOSFETs from Vishay provide the


    Original
    PDF IRFP448, SiHFP448 2002/95/EC O-247AC O-247AC O-22hay 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRFP448_RC, SiHFP448_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    PDF IRFP448 SiHFP448 AN609, 22-Jun-10

    Untitled

    Abstract: No abstract text available
    Text: IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 8.4 Qgd (nC) 50 Configuration Single D RoHS* COMPLIANT Third Generation Power MOSFETs from Vishay provide the


    Original
    PDF IRFP448, SiHFP448 2002/95/EC O-247AC O-247AC O-22trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 8.4 Qgd (nC) 50 Configuration Single D RoHS* COMPLIANT Third Generation Power MOSFETs from Vishay provide the


    Original
    PDF IRFP448, SiHFP448 2002/95/EC O-247AC O-247AC O-22trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 8.4 Qgd (nC) 50 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole


    Original
    PDF IRFP448, SiHFP448 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRFP448

    Abstract: No abstract text available
    Text: IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 8.4 Qgd (nC) 50 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole


    Original
    PDF IRFP448, SiHFP448 O-247 O-247 18-Jul-08 IRFP448

    Untitled

    Abstract: No abstract text available
    Text: IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 8.4 Qgd (nC) 50 Configuration Single D RoHS* COMPLIANT Third Generation Power MOSFETs from Vishay provide the


    Original
    PDF IRFP448, SiHFP448 2002/95/EC O-247AC O-247AC O-22trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 8.4 Qgd (nC) 50 Configuration Single D RoHS* COMPLIANT Third Generation Power MOSFETs from Vishay provide the


    Original
    PDF IRFP448, SiHFP448 O-247AC O-220AB O-247AC O-218 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    IRFP448

    Abstract: No abstract text available
    Text: IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 8.4 Qgd (nC) 50 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole


    Original
    PDF IRFP448, SiHFP448 O-247 O-247 18-Jul-08 IRFP448

    IRFP448

    Abstract: No abstract text available
    Text: IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 8.4 Qgd (nC) 50 Configuration Single D RoHS* COMPLIANT Third Generation Power MOSFETs from Vishay provide the


    Original
    PDF IRFP448, SiHFP448 O-247AC O-220AB O-247AC O-218 11-Mar-11 IRFP448

    Untitled

    Abstract: No abstract text available
    Text: IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 8.4 Qgd (nC) 50 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole


    Original
    PDF IRFP448, SiHFP448 O-247 O-247 O-220 12-Mar-07