SiHFIZ48G
Abstract: No abstract text available
Text: IRFIZ48G, SiHFIZ48G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS V 60 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.018 Qg (Max.) (nC) 110 • Sink to Lead Creepage Distance = 4.8 mm
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IRFIZ48G,
SiHFIZ48G
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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IRFIZ48G
Abstract: SiHFIZ48G SiHFIZ48G-E3
Text: IRFIZ48G, SiHFIZ48G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS V 60 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.018 Qg (Max.) (nC) 110 • Sink to Lead Creepage Distance = 4.8 mm
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PDF
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IRFIZ48G,
SiHFIZ48G
O-220
18-Jul-08
IRFIZ48G
SiHFIZ48G-E3
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SiHFIZ48G
Abstract: No abstract text available
Text: IRFIZ48G, SiHFIZ48G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS V 60 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.018 Qg (Max.) (nC) 110 • Sink to Lead Creepage Distance = 4.8 mm
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Original
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PDF
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IRFIZ48G,
SiHFIZ48G
O-220
12-Mar-07
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SiHFIZ48G
Abstract: No abstract text available
Text: IRFIZ48G, SiHFIZ48G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS V 60 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.018 Qg (Max.) (nC) 110 • Sink to Lead Creepage Distance = 4.8 mm
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Original
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PDF
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IRFIZ48G,
SiHFIZ48G
O-220
O-22emarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SiHFIZ48G
Abstract: IRFIZ48G SiHFIZ48G-E3
Text: IRFIZ48G, SiHFIZ48G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS V 60 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.018 Qg (Max.) (nC) 110 • Sink to Lead Creepage Distance = 4.8 mm
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Original
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PDF
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IRFIZ48G,
SiHFIZ48G
O-220
18-Jul-08
IRFIZ48G
SiHFIZ48G-E3
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SiHFIZ48G
Abstract: No abstract text available
Text: IRFIZ48G, SiHFIZ48G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS V 60 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.018 Qg (Max.) (nC) 110 • Sink to Lead Creepage Distance = 4.8 mm
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Original
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PDF
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IRFIZ48G,
SiHFIZ48G
O-220
11-Mar-11
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SiHFIZ48G
Abstract: No abstract text available
Text: IRFIZ48G, SiHFIZ48G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS V 60 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.018 Qg (Max.) (nC) 110 • Sink to Lead Creepage Distance = 4.8 mm
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Original
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IRFIZ48G,
SiHFIZ48G
O-220
O-22electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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4148
Abstract: diode t 4148 AN609 IRFIZ48G SiHFIZ48G
Text: IRFIZ48G_RC, SiHFIZ48G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRFIZ48G
SiHFIZ48G
AN609,
31-May-10
4148
diode t 4148
AN609
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