SiHFI9Z14G
Abstract: No abstract text available
Text: IRFI9Z14G, SiHFI9Z14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature
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IRFI9Z14G,
SiHFI9Z14G
O-220
11-Mar-11
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SiHFI9Z14G
Abstract: No abstract text available
Text: IRFI9Z14G, SiHFI9Z14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature
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Original
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PDF
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IRFI9Z14G,
SiHFI9Z14G
O-220
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SiHFI9Z14G
Abstract: No abstract text available
Text: IRFI9Z14G, SiHFI9Z14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature
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Original
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PDF
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IRFI9Z14G,
SiHFI9Z14G
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SiHFI9Z14G
Abstract: No abstract text available
Text: IRFI9Z14G, SiHFI9Z14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature
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Original
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PDF
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IRFI9Z14G,
SiHFI9Z14G
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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9934
Abstract: AN609 IRFI9Z14G
Text: IRFI9Z14G_RC, SiHFI9Z14G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRFI9Z14G
SiHFI9Z14G
AN609,
11-May-10
9934
AN609
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IRFI9Z14G
Abstract: SiHFI9Z14G
Text: IRFI9Z14G, SiHFI9Z14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature
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Original
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PDF
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IRFI9Z14G,
SiHFI9Z14G
O-220
18-Jul-08
IRFI9Z14G
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IRFI9Z14G
Abstract: SiHFI9Z14G
Text: IRFI9Z14G, SiHFI9Z14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature
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Original
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PDF
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IRFI9Z14G,
SiHFI9Z14G
O-220
18-Jul-08
IRFI9Z14G
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SiHFI9Z14G
Abstract: No abstract text available
Text: IRFI9Z14G, SiHFI9Z14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature
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Original
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PDF
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IRFI9Z14G,
SiHFI9Z14G
O-220
12-Mar-07
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