irfi9630g
Abstract: SiHFI9630G SiHFI9630G-E3
Text: IRFI9630G, SiHFI9630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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IRFI9630G,
SiHFI9630G
O-220
18-Jul-08
irfi9630g
SiHFI9630G-E3
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PDF
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AN609
Abstract: IRFI9630G SiHFI9630G
Text: IRFI9630G_RC, SiHFI9630G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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Original
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IRFI9630G
SiHFI9630G
AN609,
11-May-10
AN609
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFI9630G, SiHFI9630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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IRFI9630G,
SiHFI9630G
O-220
12-Mar-07
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PDF
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SiHFI9630G-E3
Abstract: IRFI9630G SiHFI9630G
Text: IRFI9630G, SiHFI9630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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IRFI9630G,
SiHFI9630G
O-220
18-Jul-08
SiHFI9630G-E3
IRFI9630G
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PDF
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IRFI9630G
Abstract: SiHFI9630G SiHFI9630G-E3
Text: IRFI9630G, SiHFI9630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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IRFI9630G,
SiHFI9630G
O-220
11-Mar-11
IRFI9630G
SiHFI9630G-E3
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFI9630G, SiHFI9630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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IRFI9630G,
SiHFI9630G
O-220
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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IRFI9630G
Abstract: No abstract text available
Text: IRFI9630G, SiHFI9630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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IRFI9630G,
SiHFI9630G
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRFI9630G
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFI9630G, SiHFI9630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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IRFI9630G,
SiHFI9630G
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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