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    SIHFBF20 Search Results

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    SIHFBF20 Price and Stock

    Vishay Intertechnologies SIHFBF20S-GE3

    Transistor: N-MOSFET; unipolar; 900V; 1.1A; Idm: 6.8A; 54W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SIHFBF20S-GE3 1
    • 1 $1.18
    • 10 $1.06
    • 100 $0.84
    • 1000 $0.78
    • 10000 $0.78
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    Vishay Intertechnologies SIHFBF20STRL-GE3

    Transistor: N-MOSFET; unipolar; 900V; 1.1A; Idm: 6.8A; 54W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SIHFBF20STRL-GE3 1
    • 1 $1.18
    • 10 $1.06
    • 100 $0.84
    • 1000 $0.76
    • 10000 $0.76
    		Get Quote
    EBV Elektronik SIHFBF20STRL-GE3 13 Weeks 800
    • 1 -
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    International Rectifier SIHFBF20STRL-GE3

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    Chip-Germany GmbH SIHFBF20STRL-GE3 89
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    Vishay Intertechnologies SIHFBF20L-GE3

    Halogen Free IRFBF20LPBF N channel ;VBRDSS 900 V; RDSon 8000 mOhm ; ID 1,7 A ; Qg 38 nC (Alt: SIHFBF20L-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    EBV Elektronik SIHFBF20L-GE3 13 Weeks 50
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    SIHFBF20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBF20S, SiHFBF20S) • Low-Profile Through-Hole (IRFBF20L, SiHFBF20L) • Available in Tape and Reel (IRFBF20S, SiHFBF20S)


    Original     		PDF IRFBF20S, SiHFBF20S IRFBF20L, SiHFBF20L

    Untitled

    Abstract: No abstract text available
    Text: IRFBF20, SiHFBF20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 4.7 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRFBF20, SiHFBF20 O-220 12-Mar-07

    IRFBF20s

    Abstract: SiHFBF20L
    Text: IRFBF20S, IRFBF20L, SiHFBF20S, SiHFBF20L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount (IRFBF20S/SiHFBF20S) 900 RDS(on) (Ω) VGS = 10 V • Low-Profile Through-Hole (IRFBF20L/SiHFBF20L) 8.0 Qg (Max.) (nC) 38 • Available


    Original     		PDF IRFBF20S, IRFBF20L, SiHFBF20S SiHFBF20L IRFBF20S/SiHFBF20S) IRFBF20L/SiHFBF20L) O-262) O-263) 12-Mar-07 IRFBF20s

    Untitled

    Abstract: No abstract text available
    Text: IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBF20S, SiHFBF20S) • Low-Profile Through-Hole (IRFBF20L, SiHFBF20L) • Available in Tape and Reel (IRFBF20S, SiHFBF20S)


    Original     		PDF IRFBF20S, SiHFBF20S IRFBF20L, SiHFBF20L

    Untitled

    Abstract: No abstract text available
    Text: IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBF20S, SiHFBF20S) • Low-Profile Through-Hole (IRFBF20L, SiHFBF20L) • Available in Tape and Reel (IRFBF20S, SiHFBF20S)


    Original     		PDF IRFBF20S, SiHFBF20S IRFBF20L, SiHFBF20L

    Untitled

    Abstract: No abstract text available
    Text: IRFBF20, SiHFBF20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 4.7 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRFBF20, SiHFBF20 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRFBF20, SiHFBF20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 4.7 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRFBF20, SiHFBF20 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRFBF20, SiHFBF20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 4.7 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRFBF20, SiHFBF20 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    9014 transistor specification

    Abstract: AN609 IRFBF20 SiHFBF20
    Text: IRFBF20_RC, SiHFBF20_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRFBF20 SiHFBF20 AN609, 20-Apr-10 9014 transistor specification AN609

    IRFBF20L

    Abstract: IRFBF20S SiHFBF20L
    Text: IRFBF20S, IRFBF20L, SiHFBF20S, SiHFBF20L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount (IRFBF20S/SiHFBF20S) 900 RDS(on) (Ω) VGS = 10 V • Low-Profile Through-Hole (IRFBF20L/SiHFBF20L) 8.0 Qg (Max.) (nC) 38 • Available


    Original     		PDF IRFBF20S, IRFBF20L, SiHFBF20S SiHFBF20L IRFBF20S/SiHFBF20S) IRFBF20L/SiHFBF20L) O-262) O-263) 18-Jul-08 IRFBF20L IRFBF20S

    Untitled

    Abstract: No abstract text available
    Text: IRFBF20, SiHFBF20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 4.7 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRFBF20, SiHFBF20 2002/95/EC O-220AB 11-Mar-11

    MOSFET 1053

    Abstract: No abstract text available
    Text: IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBF20S, SiHFBF20S) • Low-Profile Through-Hole (IRFBF20L, SiHFBF20L) • Available in Tape and Reel (IRFBF20S, SiHFBF20S)


    Original     		PDF IRFBF20S, SiHFBF20S IRFBF20L, SiHFBF20L MOSFET 1053

    Untitled

    Abstract: No abstract text available
    Text: IRFBF20, SiHFBF20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 4.7 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRFBF20, SiHFBF20 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    8923

    Abstract: 9014 transistor specification IRFBF20L IRFBF20S AN609
    Text: IRFBF20S_RC, SiHFBF20S_RC, IRFBF20L_RC, SiHFBF20L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF IRFBF20S SiHFBF20S IRFBF20L SiHFBF20L AN609, 20-Apr-10 8923 9014 transistor specification AN609

    71195

    Abstract: No abstract text available
    Text: IRFBF20, SiHFBF20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 4.7 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRFBF20, SiHFBF20 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 71195

    IRFBF20STRLPB

    Abstract: No abstract text available
    Text: IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBF20S, SiHFBF20S) • Low-Profile Through-Hole (IRFBF20L, SiHFBF20L) • Available in Tape and Reel (IRFBF20S, SiHFBF20S)


    Original     		PDF IRFBF20S, SiHFBF20S IRFBF20L, SiHFBF20L IRFBF20STRLPB

    IRFBF20

    Abstract: SiHFBF20 SiHFBF20-E3
    Text: IRFBF20, SiHFBF20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 4.7 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRFBF20, SiHFBF20 2002/95/EC O-220AB 11-Mar-11 IRFBF20 SiHFBF20-E3

    IRFBF20

    Abstract: SiHFBF20 SiHFBF20-E3
    Text: IRFBF20, SiHFBF20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 4.7 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRFBF20, SiHFBF20 O-220 18-Jul-08 IRFBF20 SiHFBF20-E3

    Untitled

    Abstract: No abstract text available
    Text: IRFBF20, SiHFBF20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 4.7 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRFBF20, SiHFBF20 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12