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    SIHF23N60E Price and Stock

    Vishay Siliconix SIHF23N60E-GE3

    MOSFET N-CH 600V 23A TO220
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    DigiKey SIHF23N60E-GE3 Reel 1,000
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    • 1000 $1.52825
    • 10000 $1.52825
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    Vishay Intertechnologies SIHF23N60E-GE3

    N-CHANNEL 600V - Tape and Reel (Alt: SIHF23N60E-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIHF23N60E-GE3 Reel 18 Weeks 1,000
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    • 1000 $1.552
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    Mouser Electronics SIHF23N60E-GE3
    • 1 $3.27
    • 10 $2.74
    • 100 $2.22
    • 1000 $1.69
    • 10000 $1.52
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    TME SIHF23N60E-GE3 1
    • 1 $3.27
    • 10 $2.94
    • 100 $2.34
    • 1000 $2.17
    • 10000 $2.17
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    EBV Elektronik SIHF23N60E-GE3 19 Weeks 50
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    SIHF23N60E Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHF23N60E-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 23A TO-220 Original PDF

    SIHF23N60E Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SiHF23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.158 Qg max. (nC) 95 • Reduced Switching and Conduction Losses


    Original     		PDF SiHF23N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHF23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.158 Qg max. (nC) 95 • Reduced switching and conduction losses


    Original     		PDF SiHF23N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHF23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.158 Qg max. (nC) 95 • Reduced Switching and Conduction Losses


    Original     		PDF SiHF23N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHF23N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHF23N60E AN609, 4220u 2602m 6200m 5226m 02-Apr-13