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    SIHB22N65E Price and Stock

    Vishay Intertechnologies SIHB22N65E-GE3

    MOSFETs 650V Vds 30V Vgs D2PAK (TO-263)
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    Mouser Electronics SIHB22N65E-GE3
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    EBV Elektronik SIHB22N65E-GE3 19 Weeks 50
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    Vishay Intertechnologies SIHB22N65E-T1-GE3

    Trans MOSFET N-CH 650V 22A 3-Pin(2+Tab) D2PAK T/R
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    Arrow Electronics SIHB22N65E-T1-GE3 800 34 Weeks 800
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    TTI SIHB22N65E-T1-GE3 Reel 46,400 800
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    SIHB22N65E-T1-GE3 Reel 800
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    Chip1Stop SIHB22N65E-T1-GE3 800
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    SIHB22N65E Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIHB22N65E-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 22A D2PAK Original PDF

    SIHB22N65E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SiHB22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • • • • • • 700 VGS = 10 V Qg max. (nC) 0.18 110 Qgs (nC) 15 Qgd (nC) 32 Configuration Single APPLICATIONS


    Original     		PDF SiHB22N65E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHB22N65E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHB22N65E AN609, 7606u 6283m 6682m 0922u 23-Jul-14

    Untitled

    Abstract: No abstract text available
    Text: SiHB22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 700 VGS = 10 V 0.18 Qg max. (nC) 110 Qgs (nC) 15 Qgd (nC) 32 Configuration Single D APPLICATIONS


    Original     		PDF SiHB22N65E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12