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    SIHB12N65E Price and Stock

    Vishay Siliconix SIHB12N65E-GE3

    MOSFET N-CH 650V 12A D2PAK
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    DigiKey SIHB12N65E-GE3 Tube 1,000 1
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    • 1000 $1.18362
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    Vishay Intertechnologies SIHB12N65E-GE3

    N-CHANNEL 650V - Tape and Reel (Alt: SIHB12N65E-GE3)
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    Avnet Americas SIHB12N65E-GE3 Reel 18 Weeks 1,000
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    Mouser Electronics SIHB12N65E-GE3 834
    • 1 $3.21
    • 10 $2.09
    • 100 $1.65
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    Newark SIHB12N65E-GE3 Bulk 1
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    TTI SIHB12N65E-GE3 Tube 1,000 50
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    TME SIHB12N65E-GE3 1
    • 1 $2.5
    • 10 $2.25
    • 100 $1.79
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    EBV Elektronik SIHB12N65E-GE3 20 Weeks 50
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    SIHB12N65E Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHB12N65E-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 650V 12A D2PAK Original PDF

    SIHB12N65E Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SiHB12N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 700 VGS = 10 V Qg max. (nC) • • • • • 0.38 70 Qgs (nC) 9 Qgd (nC) 16


    Original     		PDF SiHB12N65E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHB12N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Generation Two 700 VGS = 10 V Qg max. (nC) • Low Figure-of-Merit (FOM) Ron x Qg 0.392 • • • • • 70 Qgs (nC)


    Original     		PDF SiHB12N65E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHB12N65E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHB12N65E AN609, 9430m 6635m 1327m 2651u 02-Apr-13

    Untitled

    Abstract: No abstract text available
    Text: SiHB12N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • Low figure-of-merit (FOM) Ron x Qg 700 VGS = 10 V Qg max. (nC) • • • • • 0.38 70 Qgs (nC) 9 Qgd (nC) 16 Configuration


    Original     		PDF SiHB12N65E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12