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    SIA922EDJ Price and Stock

    Vishay Siliconix SIA922EDJ-T1-GE3

    MOSFET 2N-CH 30V 4.5A PPAK8X8
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    Vishay Siliconix SIA922EDJ-T4-GE3

    MOSFET 2N-CH 30V 4.4A PPAK8X8
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    Vishay Intertechnologies SIA922EDJ-T1-GE3

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    Bristol Electronics SIA922EDJ-T1-GE3 80
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    Vishay Huntington SIA922EDJ-T1-GE3

    MOSFET 2N-CH 30V 4.5A SC70-6
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    Win Source Electronics SIA922EDJ-T1-GE3 29,567
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    SIA922EDJ Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIA922EDJ-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 4.5A SC70-6 Original PDF
    SIA922EDJ-T4-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET N-CH 30V SMD Original PDF

    SIA922EDJ Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiA922EDJ www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF SiA922EDJ 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA922EDJ Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) () Max. ID (A) 0.064 at VGS = 4.5 V 4.5 0.072 at VGS = 3.0 V 4.5 0.080 at Vgs = 2.5 V 4.5 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK®


    Original     		PDF SiA922EDJ SC-70 SC-70-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiA922EDJ www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () MAX. ID (A) 0.064 at VGS = 4.5 V 4.5a 0.072 at VGS = 3.0 V 4.5a 0.080 at VGS = 2.5 V 4.5a 0.400 at VGS = 1.8 V 0.2 • TrenchFET Power MOSFET


    Original     		PDF SiA922EDJ SC-70 SC-70-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiA922EDJ_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiA922EDJ AN609, 5187u 0761u 8398m 4691u 4022m 8647u 4259u 04-Dec-12

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance PowerPAK SC-70 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:


    Original     		PDF SC-70 SiA519EDJ com/mosfets/powerpak-sc-70-package/ VMN-PT0131-1402