Untitled
Abstract: No abstract text available
Text: SiA442DJ Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 60 0.032 at VGS = 10 V 12 0.052 at VGS = 4.5 V 12 Qg (Typ.) 3.5 nC PowerPAK SC-70-6L-Single APPLICATIONS • • • • Primary Side Switch POL/Power Bricks
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SiA442DJ
SC-70-6L-Single
SiA442DJ-electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiA442DJ www.vishay.com Vishay Siliconix N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C
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SiA442DJ
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PowerPAK 1212-8
Abstract: sir640 SiA442DJ SO8L PowerPAK SO-8 Si4038DY SUM90N06-02P SiS488DN
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Low RDS ON of 1.7 mΩ @ 40 V and 2.7 mΩ @ 60 V I INNOVAT AND TEC O L OGY 40 V and 60 V TrenchFET Gen IV N HN POWER MOSFETs O 19 62-2012 Higher Efficiency and Power Density with a Combination of
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SC-70
O-220
O-236
SiR640DP
Si4038DY
SiS488DN
SiR662DP
SUP90N06-02P
SUM90N06-02P
Si4062DY
PowerPAK 1212-8
sir640
SiA442DJ
SO8L
PowerPAK SO-8
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Untitled
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs – Low RDS on of 1.7 mΩ @ 40 V and 2.7 mΩ @ 60 V 40 V and 60 V TrenchFET Gen IV Higher Efficiency and Power Density with a Combination of Low RDS(on) and Excellent Dynamic Characteristics
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SiR640DP
Si4038DY
SiS488DN
SiR662DP
O-220
O-263
SUP90N06-02P
SUM90N06-02P
Si4062DY
SiJ462DP
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Untitled
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs 40 V, 60 V, and 80 V TrenchFET Gen IV Higher Efficiency and Power Density with Low RDS on and Excellent Dynamic Characteristics KEY BENEFITS • Reduce power loss from conduction with 40 % lower RDS(on) than previous-generation device. 60 V MOSFETs
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O-263)
Si4038DY
SiS488DN
SUM50020EL
SUP50020EL
SiR662DP
SiR688DP
SiR664DP
SiJ462DP
SiS862DN
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N-Channel MOSFETs
Abstract: No abstract text available
Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in
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SC-70
SC-75
1212-8S
VMN-MS6926-1406
N-Channel MOSFETs
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