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    Vishay Siliconix SI7882DP-T1-E3

    MOSFET N-CH 12V 13A PPAK SO-8
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    DigiKey SI7882DP-T1-E3 Reel
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    Vishay Siliconix SI7882DP-T1-GE3

    MOSFET N-CH 12V 13A PPAK SO-8
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    Vishay Intertechnologies SI7882DP-T1-E3

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    Bristol Electronics SI7882DP-T1-E3 289
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    Vishay Intertechnologies SI7882DPT1E3

    N-CHANNEL REDUCED QG, FAST SWITCHING MOSFET Power Field-Effect Transistor, 13A I(D), 12V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA SI7882DPT1E3 990
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    SI7882DP Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    Si7882DP Vishay Intertechnology N-Channel Reduced Q g , Fast Switching MOSFET Original PDF
    SI7882DP Vishay Siliconix MOSFETs Original PDF
    Si7882DP SPICE Device Model Vishay N-Channel Reduced Qg, Fast Switching MOSFET Original PDF
    SI7882DP-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 12V 13A PPAK 8SOIC Original PDF
    SI7882DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 12V 13A PPAK 8SOIC Original PDF

    SI7882DP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si7882DP

    Abstract: No abstract text available
    Text: SPICE Device Model Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7882DP 16-May-02

    Untitled

    Abstract: No abstract text available
    Text: Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for High Efficiency D 100% Rg Tested PRODUCT SUMMARY VDS V 12


    Original     		PDF Si7882DP 07-mm 500-kHz Si7882DP-T1 08-Apr-05

    SI7882DP-T1-E3

    Abstract: Si7882DP Si7882DP-T1
    Text: Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 rDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 22 0.008 at VGS = 2.5 V 18 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile


    Original     		PDF Si7882DP 500-kHz Si7882DP-T1 Si7882DP-T1-E3 S-61086-Rev. 19-Jun-06

    Untitled

    Abstract: No abstract text available
    Text: Si7882DP New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D PWM Optimized for High Efficiency PRODUCT SUMMARY VDS V 12 rDS(on) (W)


    Original     		PDF Si7882DP 07-mm 500-kHz S-20803--Rev. 17-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 22 0.008 at VGS = 2.5 V 18 PowerPAK SO-8 RoHS* COMPLIANT • Point-of-Load Synchronous Rectifier - 5 V or 3.3 V BUS Step Down


    Original     		PDF Si7882DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si7882DP New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D PWM Optimized for High Efficiency PRODUCT SUMMARY VDS V 12 rDS(on) (W)


    Original     		PDF Si7882DP 07-mm 500-kHz S-20476--Rev. 22-Apr-02

    Untitled

    Abstract: No abstract text available
    Text: Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 rDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 22 0.008 at VGS = 2.5 V 18 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile


    Original     		PDF Si7882DP 500-kHz Si7882DP-T1 Si7882DP-T1-E3 08-Apr-05

    Si7882DP

    Abstract: No abstract text available
    Text: Si7882DP New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D PWM Optimized for High Efficiency PRODUCT SUMMARY VDS V 12 rDS(on) (W)


    Original     		PDF Si7882DP 07-mm 500-kHz S-21194--Rev. 29-Ju1-02

    Untitled

    Abstract: No abstract text available
    Text: Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 22 0.008 at VGS = 2.5 V 18 PowerPAK SO-8 RoHS* COMPLIANT • Point-of-Load Synchronous Rectifier - 5 V or 3.3 V BUS Step Down


    Original     		PDF Si7882DP Si7882DP-T1 Si7882DP-T1-E3 Si7882DP-T1-GE3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 22 0.008 at VGS = 2.5 V 18 PowerPAK SO-8 RoHS* COMPLIANT • Point-of-Load Synchronous Rectifier - 5 V or 3.3 V BUS Step Down


    Original     		PDF Si7882DP Si7882DP-T1 Si7882DP-T1-E3 Si7882DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si7882DP

    Abstract: Si7882DP-T1 Si7882DP-T1-E3
    Text: Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 22 0.008 at VGS = 2.5 V 18 PowerPAK SO-8 RoHS* COMPLIANT • Point-of-Load Synchronous Rectifier - 5 V or 3.3 V BUS Step Down


    Original     		PDF Si7882DP Si7882Dlectual 18-Jul-08 Si7882DP-T1 Si7882DP-T1-E3

    Si7882DP

    Abstract: Si7882DP-T1 Si7882DP-T1-E3
    Text: Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 22 0.008 at VGS = 2.5 V 18 PowerPAK SO-8 RoHS* COMPLIANT • Point-of-Load Synchronous Rectifier - 5 V or 3.3 V BUS Step Down


    Original     		PDF Si7882DP Si7882D 11-Mar-11 Si7882DP-T1 Si7882DP-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 22 0.008 at VGS = 2.5 V 18 PowerPAK SO-8 RoHS* COMPLIANT • Point-of-Load Synchronous Rectifier - 5 V or 3.3 V BUS Step Down


    Original     		PDF Si7882DP Si7882DP-T1 Si7882DP-T1-E3 Si7882DP-T1-GE3 11-Mar-11

    Si7882DP

    Abstract: No abstract text available
    Text: SPICE Device Model Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7882DP S-60409Rev. 20-Mar-06

    Si7882DP

    Abstract: No abstract text available
    Text: SPICE Device Model Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7882DP 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 rDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 22 0.008 at VGS = 2.5 V 18 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile


    Original     		PDF Si7882DP 500-kHz Si7882DP-T1 Si7882DP-T1-E3 08-Apr-05

    Si7882DP

    Abstract: Si7882DP-T1
    Text: Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for High Efficiency D 100% Rg Tested PRODUCT SUMMARY VDS V 12


    Original     		PDF Si7882DP 07-mm 500-kHz Si7882DP-T1 S-31727--Rev. 18-Aug-03

    Untitled

    Abstract: No abstract text available
    Text: Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 rDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 22 0.008 at VGS = 2.5 V 18 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile


    Original     		PDF Si7882DP 07-mm 500-kHz Si7882DP-T1 Si7882DP-T1--E3 08-Apr-05

    smd transistor M21

    Abstract: 4607 n-channel
    Text: SC4607 Very Low Input, MHz Operation, High Efficiency Synchronous Buck POWER MANAGEMENT Description Features The SC4607 is a voltage mode step down buck regulator controller that provides accurate high efficiency power conversion from an input supply range of 2.25V to 5.5V.


    Original     		PDF SC4607 smd transistor M21 4607 n-channel

    TRANSISTOR C 6090 npn

    Abstract: TRANSISTOR C 6090 FZ 87 1500 6.3V ADP1621 transistor irf 649 21605 lcd driver bh510 6TPE150M rubycon 100v 22uf IRF7470
    Text: Constant-Frequency, Current-Mode Step-Up DC/DC Controller ADP1621 FEATURES TYPICAL APPLICATION CIRCUIT VIN = 3.3V L1 4.7µH VOUT = 5V 1A D1 C3 1µF 10V C4 0.1µF 10V IN PIN R1 35.7kΩ 1% RS 80Ω CS ADP1621 SDSN GATE COMP C2 120pF RCOMP 9.09kΩ CCOMP 1.8nF


    Original     		PDF ADP1621 120pF 600kHz GRM31CR60J476M 6TPE150M FDV0630-4R7M MO-187-BA 10-Lead RM-10) TRANSISTOR C 6090 npn TRANSISTOR C 6090 FZ 87 1500 6.3V ADP1621 transistor irf 649 21605 lcd driver bh510 6TPE150M rubycon 100v 22uf IRF7470

    transistor irf 649

    Abstract: ADP1621 BH510-1006 50-ZL-220-M-10 FZ 89 1500 6.3V
    Text: FEATURES TYPICAL APPLICATION CIRCUIT VIN = 3.3V L1 4.7µH C3 1µF 10V C4 0.1µF 10V IN R1 35.7kΩ 1% RS 80Ω ADP1621 SDSN GATE COMP C2 120pF RCOMP 9.09kΩ CCOMP 1.8nF M1 COUT1 1µF 10V COUT2 10µF 10V R2 11.5kΩ 1% COUT3 150µF 6.3V x2 PGND FREQ FB GND


    Original     		PDF 91709-A MO-187-BA 10-Lead RM-10) ADP1621ARMZ-R7 ADP1621-EVAL RM-10 ADP1621 D06090-0-6/12 transistor irf 649 BH510-1006 50-ZL-220-M-10 FZ 89 1500 6.3V

    71917

    Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
    Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller


    Original     		PDF AN607 Si9137 SSOP-28 Si9910 Si9912 Si9913 10-Oct-02 71917 level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds

    CS15

    Abstract: SC2441A SC2441ATETRT TSSOP-28 c25 mosfet
    Text: SC2441A 1.8V to 20V Input 2-Phase Synchronous Step-down Controllers with Step-up Converter POWER MANAGEMENT Description Features The SC2441A is a programmable frequency dual independent or dual/multiple phase single output peak current-mode step-down switching regulator controller. It


    Original     		PDF SC2441A SC2441A MO-153, TSSOP-28 CS15 SC2441ATETRT TSSOP-28 c25 mosfet

    marking mv sot23 mosfet

    Abstract: sot 26 Dual N-Channel MOSFET 1.5V to 012V dc dc boost converter
    Text: LTC3836 Dual 2-Phase, No RSENSETM Low VIN Synchronous Controller FEATURES DESCRIPTION n The LTC 3836 is a 2-phase dual output synchronous step-down switching regulator controller with tracking that drives external N-channel power MOSFETs using few external components. The constant-frequency current


    Original     		PDF LTC3836 16-Lead 10-Lead LTC3809/LTC3809-1 LTC3822 LTC3822-1 3836fb marking mv sot23 mosfet sot 26 Dual N-Channel MOSFET 1.5V to 012V dc dc boost converter