39a28
Abstract: Si7606DN
Text: Si7606DN Vishay Siliconix New Product N-Channel 125-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.108 @ VGS = 10 V 14.5 0.115 @ VGS = 4.5 V 14 VDS (V) 125 Qg (Typ) 9 1 nC 9.1 2 D 3.30 mm S 3 COMPLIANT D Primary Side Switch S 1 RoHS APPLICATIONS
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Si7606DN
Si7606DN-T1--E3
12-May-05
39a28
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Si7606DN
Abstract: No abstract text available
Text: SPICE Device Model Si7606DN Vishay Siliconix N-Channel 125-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7606DN
18-Jul-08
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si7606
Abstract: No abstract text available
Text: Si7606DN Vishay Siliconix N-Channel 125-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.108 at VGS = 10 V 14.5 0.115 at VGS = 4.5 V 14 VDS (V) 125 Qg (Typ.) 9.1 nC PowerPAK 1212-8 S 3.30 mm 3.30 mm 1 D APPLICATIONS S 2 • Halogen-free According to IEC 61249-2-21
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Si7606DN
Si7606DN-T1-E3
Si7606DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si7606
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Si7606DN
Abstract: No abstract text available
Text: Si7606DN Vishay Siliconix New Product N-Channel 125-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.108 at VGS = 10 V 14.5 0.115 at VGS = 4.5 V 14 VDS (V) 125 Qg (Typ) 9.1 nC PowerPAK 1212-8 • TrenchFET® Power MOSFET • Optimized for Fast Switching Applications
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Si7606DN
Si7606DN-T1-E3
08-Apr-05
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Si7606DN
Abstract: No abstract text available
Text: Si7606DN Vishay Siliconix New Product N-Channel 125-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.108 @ VGS = 10 V 14.5 0.115 @ VGS = 4.5 V 14 VDS (V) 125 Qg (Typ) 9 1 nC 9.1 2 D 3.30 mm S 3 COMPLIANT D Primary Side Switch S 1 RoHS APPLICATIONS
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Si7606DN
Si7606DN-T1--E3
08-Apr-05
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Si7606DN
Abstract: No abstract text available
Text: Si7606DN Vishay Siliconix New Product N-Channel 125-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.108 at VGS = 10 V 14.5 0.115 at VGS = 4.5 V 14 VDS (V) 125 Qg (Typ) 9.1 nC PowerPAK 1212-8 • TrenchFET® Power MOSFET • Optimized for Fast Switching Applications
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Si7606DN
Si7606DN-T1-E3
18-Jul-08
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AN609
Abstract: No abstract text available
Text: Si7606DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si7606DN
AN609
02-Dec-05
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Si7606DN
Abstract: No abstract text available
Text: Si7606DN Vishay Siliconix N-Channel 125-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.108 at VGS = 10 V 14.5 0.115 at VGS = 4.5 V 14 VDS (V) 125 Qg (Typ.) 9.1 nC PowerPAK 1212-8 S 3.30 mm 3.30 mm 1 D APPLICATIONS S 2 • Halogen-free According to IEC 61249-2-21
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Si7606DN
Si7606DN-T1-E3
Si7606DN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Si7606DN-T1-E3
Abstract: Si7606DN
Text: Si7606DN Vishay Siliconix N-Channel 125-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.108 at VGS = 10 V 14.5 0.115 at VGS = 4.5 V 14 VDS (V) 125 Qg (Typ.) 9.1 nC PowerPAK 1212-8 S 3.30 mm 3.30 mm 1 D APPLICATIONS S 2 • Halogen-free According to IEC 61249-2-21
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Si7606DN
Si7606DN-T1-E3
Si7606DN-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Data Constant-Frequency Current-Mode Step-Up DC/DC Controller ADP1621 FEATURES High Efficiency No Sense Resistor Required ±1.0% Initial Accuracy IC Supply Voltage Range: 2.9V to 5.5V Power Input Voltage as Low as 1.0V Capable of High Supply Input Voltage (>5.5V) with
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ADP1621
100kHz
ADP1621ARMZ1
ADP1621ARMZ1-R7
-40oC
10-lead
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q406 transistor
Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no
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SiP41109
SiP41110
SiP41111
75/2A
q406 transistor
SI9120
equivalent Q406
q406
SUM65N20-30
Si3456BDV SPICE Device Model
sud*50n025
Si4304DY
0038 tsop
Si2325DS
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