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    Vishay Intertechnologies SI7444DP-T1-GE3

    MOSFET 40V 23.6A 5.4W 6.1mohm @ 10V
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    Mouser Electronics SI7444DP-T1-GE3
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    Vishay Intertechnologies SI7444DP-T1-E3

    MOSFET 40V 23.6A 1.9W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SI7444DP-T1-E3
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.42
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    SI7444DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI7444DP Vishay Siliconix MOSFETs Original PDF

    SI7444DP Datasheets Context Search

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    Si7444DP

    Abstract: No abstract text available
    Text: Si7444DP Vishay Siliconix N-Channel 40-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) Qg (Typ) 40 0.0061@ VGS = 10 V 23.6 105 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile


    Original     		PDF Si7444DP 07-mm Si7444DP-T1--E3 S-51565-Rev. 31-Oct-05

    Si7444DP

    Abstract: No abstract text available
    Text: Si7444DP Vishay Siliconix N-Channel 40-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) Qg (Typ) 40 0.0061 @ VGS = 10 V 23.6 105 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile


    Original     		PDF Si7444DP 07-mm Si7444DP-T1--E3 S-42058--Rev. 15-Nov-04

    Untitled

    Abstract: No abstract text available
    Text: Si7444DP Vishay Siliconix N-Channel 40-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) Qg (Typ) 40 0.0061@ VGS = 10 V 23.6 105 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile


    Original     		PDF Si7444DP 07-mm Si7444DP-T1--E3 08-Apr-05

    Si7444DP

    Abstract: No abstract text available
    Text: SPICE Device Model Si7444DP Vishay Siliconix N-Channel 40-V D-S Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7444DP 18-Jul-08

    Si7444DP

    Abstract: Si7444DP-T1-E3
    Text: Si7444DP Vishay Siliconix N-Channel 40-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 40 0.0061 at VGS = 10 V 23.6 105 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®


    Original     		PDF Si7444DP Si7444DP-T1-E3 Si7444DP-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si7444DP New Product Vishay Siliconix N-Channel 40-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 40 0.0061 @ VGS = 10 V 23.6 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile


    Original     		PDF Si7444DP 07-mm Si7444DP-T1--E3 S-40857--Rev. 03-May-04

    AN609

    Abstract: Si7444DP
    Text: Si7444DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si7444DP AN609 12-Jan-06

    Untitled

    Abstract: No abstract text available
    Text: Si7444DP Vishay Siliconix N-Channel 40-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 40 0.0061 at VGS = 10 V 23.6 105 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®


    Original     		PDF Si7444DP Si7444DP-T1-E3 Si7444DP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si7444DP Vishay Siliconix N-Channel 40-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 40 0.0061 at VGS = 10 V 23.6 105 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®


    Original     		PDF Si7444DP Si7444DP-T1-E3 Si7444DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si7444DP Vishay Siliconix N-Channel 40-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) Qg (Typ) 40 0.0061@ VGS = 10 V 23.6 105 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile


    Original     		PDF Si7444DP 07-mm Si7444DP-T1--E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si7444DP Vishay Siliconix N-Channel 40-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 40 0.0061 at VGS = 10 V 23.6 105 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®


    Original     		PDF Si7444DP Si7444DP-T1-E3 Si7444DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    q406 transistor

    Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
    Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS