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    Vishay Intertechnologies SI6975DQ-T1-GE3

    MOSFETs 12V 5.1A 1.14W 27mohm @ 4.5V
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    SI6975DQ Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    Si6975DQ Vishay Intertechnology Dual P-Channel 12-V (D-S) MOSFET Original PDF
    SI6975DQ Vishay Siliconix MOSFETs Original PDF
    Si6975DQ-T1 Vishay Intertechnology Dual P-Channel 12-V (D-S) MOSFET Original PDF
    SI6975DQ-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 12V 4.3A 8TSSOP Original PDF
    SI6975DQ-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 12V 4.3A 8TSSOP Original PDF

    SI6975DQ Datasheets Context Search

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    Si6975DQ

    Abstract: No abstract text available
    Text: Si6975DQ Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.027 at VGS = - 4.5 V - 5.1 0.036 at VGS = - 2.5 V - 4.5 0.046 at VGS = - 1.8 V - 3.9 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated


    Original     		PDF Si6975DQ Si6975DQ-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si6975DQ New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.027 @ VGS = –4.5 V –5.1 0.035 @ VGS = –2.5 V –4.5 0.046 @ VGS = –1.8 V –3.9 S1 S2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 D Si6975DQ G1


    Original     		PDF Si6975DQ 08-Apr-05

    Si6975DQ

    Abstract: No abstract text available
    Text: Si6975DQ Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.027 at VGS = - 4.5 V - 5.1 0.036 at VGS = - 2.5 V - 4.5 0.046 at VGS = - 1.8 V - 3.9 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated


    Original     		PDF Si6975DQ Si6975DQ-T1-GE3 11-Mar-11

    Si6975DQ

    Abstract: No abstract text available
    Text: Si6975DQ New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.027 @ VGS = –4.5 V –5.1 0.035 @ VGS = –2.5 V –4.5 0.046 @ VGS = –1.8 V –3.9 S1 S2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 D Si6975DQ G1


    Original     		PDF Si6975DQ S-02318--Rev. 23-Oct-00

    Untitled

    Abstract: No abstract text available
    Text: Si6975DQ Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.027 at VGS = - 4.5 V - 5.1 0.036 at VGS = - 2.5 V - 4.5 0.046 at VGS = - 1.8 V - 3.9 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated


    Original     		PDF Si6975DQ Si6975DQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    m 9625

    Abstract: 0183 C 4804 mosfet 0018 AN609 Si6975DQ
    Text: Si6975DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si6975DQ AN609 11-Jul-07 m 9625 0183 C 4804 mosfet 0018

    mosfet 6655

    Abstract: No abstract text available
    Text: Si6975DQ Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.027 at VGS = - 4.5 V - 5.1 0.036 at VGS = - 2.5 V - 4.5 0.046 at VGS = - 1.8 V - 3.9 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated


    Original     		PDF Si6975DQ Si6975DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 mosfet 6655

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original     		PDF Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05

    Siliconix

    Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
    Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123


    Original     		PDF 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8

    si5480

    Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3
    Text: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT


    Original     		PDF Si6463BDQ Si6459BDQ-T1-GE3 SI5944DU-T1-E3 SI5944DU-T1-GE3 SI5945DU-T1-E3 SI5945DU-T1-GE3 SI5947DU-T1-E3 SI5947DU-T1-GE3 PPAKSC75 si5480 SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3