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    Vishay Siliconix SI6967DQ-T1-E3

    MOSFET 2P-CH 8V 8TSSOP
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    DigiKey SI6967DQ-T1-E3 Reel 3,000
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    Vishay Siliconix SI6967DQ-T1-GE3

    MOSFET 2P-CH 8V 8TSSOP
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    DigiKey SI6967DQ-T1-GE3 Reel 3,000
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    Vishay Siliconix SI6967DQ-T1

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    Bristol Electronics SI6967DQ-T1 12,000
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    Quest Components SI6967DQ-T1 9,600
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    Others SI6967DQT1

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    SILI SI6967DQ-T1

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    SI6967DQ Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    Si6967DQ Unknown Metal oxide P-channel FET, Enhancement Type Original PDF
    Si6967DQ Toshiba Power MOSFETs Cross Reference Guide Original PDF
    Si6967DQ Vishay Intertechnology Dual P-Channel 1.8-V (G-S) MOSFET Original PDF
    Si6967DQ SPICE Device Model Vishay Dual P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI6967DQ-T1 Vishay Intertechnology Dual P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI6967DQ-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 8V 8TSSOP Original PDF
    SI6967DQ-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 8V 8TSSOP Original PDF

    SI6967DQ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si6967DQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6967DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si6967DQ 16-Apr-01

    SI6967DQ

    Abstract: No abstract text available
    Text: Si6967DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V ± 5.0 0.045 at VGS = - 2.5 V ± 4.0 0.070 at VGS = - 1.8 V ± 3.0 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated


    Original     		PDF Si6967DQ Si6967DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SI6967DQ

    Abstract: No abstract text available
    Text: Si6967DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V ± 5.0 0.045 at VGS = - 2.5 V ± 4.0 0.070 at VGS = - 1.8 V ± 3.0 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated


    Original     		PDF Si6967DQ Si6967DQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si6967DQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6967DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si6967DQ S-60147Rev. 13-Feb-06

    SI6967DQ

    Abstract: No abstract text available
    Text: Si6967DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.030 @ VGS = –4.5 V "5.0 0.045 @ VGS = –2.5 V "4.0 0.070 @ VGS = –1.8 V "3.0 S1 S2 TSSOP-8 8 D2 7 S2 3 6 S2 4 5 G2 D1 1 S1 2 S1 G1 D Si6967DQ


    Original     		PDF Si6967DQ S-59525--Rev. 12-Oct-98

    Si6967DQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6967DQ Dual P-Channel 1.8-V G-S MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Subcircuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse


    Original     		PDF Si6967DQ

    SI6967DQ

    Abstract: No abstract text available
    Text: Si6967DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.030 @ VGS = –4.5 V "5.0 0.045 @ VGS = –2.5 V "4.0 0.070 @ VGS = –1.8 V "3.0 S1 S2 TSSOP-8 8 D2 7 S2 3 6 S2 4 5 G2 D1 1 S1 2 S1 G1 D Si6967DQ


    Original     		PDF Si6967DQ 08-Apr-05

    Si6967DQ

    Abstract: No abstract text available
    Text: Si6967DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.030 @ VGS = –4.5 V "5.0 0.045 @ VGS = –2.5 V "4.0 0.070 @ VGS = –1.8 V "3.0 S1 S2 TSSOP-8 8 D2 7 S2 3 6 S2 4 5 G2 D1 1 S1 2 S1 G1 D Si6967DQ


    Original     		PDF Si6967DQ S-59525--Rev. 12-Oct-98

    74842

    Abstract: 2197 4099 9120 A AN609 Si6967DQ
    Text: Si6967DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si6967DQ AN609 10-Jul-07 74842 2197 4099 9120 A

    Si6967DQ

    Abstract: No abstract text available
    Text: Si6967DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V ± 5.0 0.045 at VGS = - 2.5 V ± 4.0 0.070 at VGS = - 1.8 V ± 3.0 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated


    Original     		PDF Si6967DQ Si6967DQ-T1-GE3 18-Jul-08

    Si6967DQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6967DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si6967DQ 18-Jul-08

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original     		PDF Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8

    Untitled

    Abstract: No abstract text available
    Text: SI6967DQ VISHAY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET New Product PRODUCT SUM M AR Y V DS (V) -8 r DS(ON) I d (A) (& ) 0.030 @ VGS = —4.5 V ±5 .0 0.045 @ VGS = -2 .5 V ±4 .0 0.070 @ VGS = -1 .8 V ±3 .0 I* ' v* Si s2 o 9 TSSOP-8 d2 Di Si s2


    OCR Scan     		PDF SI6967DQ Si6967DQ S-59525â 12-Oct-98