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    SI6473DQ Price and Stock

    Vishay Siliconix SI6473DQ-T1-E3

    MOSFET P-CH 20V 6.2A 8TSSOP
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    DigiKey SI6473DQ-T1-E3 Reel 3,000
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    RS SI6473DQ-T1-E3 Bulk 3,000
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    Vishay Siliconix SI6473DQ-T1-GE3

    MOSFET P-CH 20V 6.2A 8TSSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI6473DQ-T1-GE3 Reel 3,000
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    Vishay Siliconix SI6473DQ

    6200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SI6473DQ 49
    • 1 $1.575
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    SI6473DQ Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI6473DQ Vishay Siliconix MOSFETs Original PDF
    SI6473DQ-T1 Vishay Intertechnology P-Channel 20-V (D-S) MOSFET Original PDF
    SI6473DQ-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 6.2A 8-TSSOP Original PDF
    SI6473DQ-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 6.2A 8-TSSOP Original PDF

    SI6473DQ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si6473DQ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0125 at VGS = - 4.5 V - 9.5 0.016 at VGS = - 2.5 V - 8.5 0.0215 at VGS = - 1.8 V - 7.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT


    Original     		PDF Si6473DQ Si6473DQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si6473DQ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0125 at VGS = - 4.5 V - 9.5 0.016 at VGS = - 2.5 V - 8.5 0.0215 at VGS = - 1.8 V - 7.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT


    Original     		PDF Si6473DQ Si6473DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si6473DQ

    Abstract: 01-042 71164
    Text: Si6473DQ New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.0125 @ VGS = –4.5 V –9.5 0.016 @ VGS = –2.5 V –8.5 0.0215 @ VGS = –1.8 V –7.3 –20 20 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6473DQ


    Original     		PDF Si6473DQ S-01042--Rev. 15-May-00 01-042 71164

    Si6473DQ

    Abstract: No abstract text available
    Text: Si6473DQ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0125 at VGS = - 4.5 V - 9.5 0.016 at VGS = - 2.5 V - 8.5 0.0215 at VGS = - 1.8 V - 7.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT


    Original     		PDF Si6473DQ Si6473DQ-T1-GE3 18-Jul-08

    A 7607

    Abstract: AN609 Si6473DQ
    Text: Si6473DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si6473DQ AN609 02-Jul-07 A 7607

    Untitled

    Abstract: No abstract text available
    Text: Si6473DQ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0125 at VGS = - 4.5 V - 9.5 0.016 at VGS = - 2.5 V - 8.5 0.0215 at VGS = - 1.8 V - 7.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT


    Original     		PDF Si6473DQ Si6473DQ-T1-GE3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si6473DQ New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.0125 @ VGS = –4.5 V –9.5 0.016 @ VGS = –2.5 V –8.5 0.0215 @ VGS = –1.8 V –7.3 –20 20 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6473DQ


    Original     		PDF Si6473DQ 08-Apr-05

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original     		PDF Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05

    Siliconix

    Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
    Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123


    Original     		PDF 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8

    smd diode code PJ 1466

    Abstract: IC 741 OPAMP DATASHEET a in4 733 SMD SOT23 transistor MARK 1e Diode smd code PJ 1466 datasheet opamp 741 pj 2309 smd diode irlm2502 semiconductors cross index ACS750
    Text: ispPAC Power Manager II Family Handbook HB1007 Version 01.3, November 2009 ispPAC Power Manager II Family Handbook Table of Contents November 2009 Handbook HB1007 Section I. ispPAC Power Manager II Family Data Sheets ispPAC-POWR1220AT8 . 1-1


    Original     		PDF HB1007 HB1007 ispPAC-POWR1220AT8 ispPAC-POWR1014/A ispPAC-POWR607. ispPAC-POWR607 ispPAC-POWR1014/A smd diode code PJ 1466 IC 741 OPAMP DATASHEET a in4 733 SMD SOT23 transistor MARK 1e Diode smd code PJ 1466 datasheet opamp 741 pj 2309 smd diode irlm2502 semiconductors cross index ACS750

    smd Pj 2479

    Abstract: pj 2309 diode pj 2309 smd diode smd zener diode color code ISPPACPOWER1208 cny17 03 FDS6679 "pin-compatible" Cross Reference sot23 HB1007 SMD PJ 3236
    Text: ispPAC Power Manager II Family Handbook HB1007 Version 01.1, June 2008 ispPAC Power Manager II Family Handbook Table of Contents June 2008 Handbook HB1007 Section I. ispPAC Power Manager II Family Data Sheets ispPAC-POWR1220AT8 Data Sheet . 1-1


    Original     		PDF HB1007 HB1007 ispPAC-POWR1220AT8 ispPAC-POWR1014/A ispPAC-POWR607 LA-ispPAC-POWR1014/A AN6078, smd Pj 2479 pj 2309 diode pj 2309 smd diode smd zener diode color code ISPPACPOWER1208 cny17 03 FDS6679 "pin-compatible" Cross Reference sot23 SMD PJ 3236

    si5480

    Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3
    Text: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT


    Original     		PDF Si6463BDQ Si6459BDQ-T1-GE3 SI5944DU-T1-E3 SI5944DU-T1-GE3 SI5945DU-T1-E3 SI5945DU-T1-GE3 SI5947DU-T1-E3 SI5947DU-T1-GE3 PPAKSC75 si5480 SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3

    irlm2502

    Abstract: how mosfets connect parallel IRF3716 FDS6679 MBT50P03HDL an6048 Si2314EDS IRF7410 FDS6064N3 POWR1208
    Text: Using Power MOSFETs with Power Manager Devices April 2008 Application Note AN6048 Introduction Power MOSFETs are increasingly being used to switch local power supplies on PCB assemblies. The Lattice ispPAC -POWR1208 can be used in several ways to provide intelligent control of these devices for power supply


    Original     		PDF AN6048 -POWR1208 ispPAC-POWR1208 AN6043, 1-800-LATTICE ispPACPOWR1208" irlm2502 how mosfets connect parallel IRF3716 FDS6679 MBT50P03HDL an6048 Si2314EDS IRF7410 FDS6064N3 POWR1208