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Vishay Siliconix SI4858DY-T1-E3 MOSFET N-CH 30V 13A 8SO
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DigiKey	SI4858DY-T1-E3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix SI4858DY-T1-GE3 MOSFET N-CH 30V 13A 8SO
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DigiKey	SI4858DY-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI4858DY-T1
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Bristol Electronics	SI4858DY-T1		2,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SI4858DY-T1-E3
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Quest Components	SI4858DY-T1-E3		43			1 $4.2 10 $3.08 100 $2.8 1000 $2.8 10000 $2.8	Buy Now

SI4858DY Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
Si4858DY		Vishay Intertechnology	N-Channel 30-V (D-S) MOSFET		Original	PDF
SI4858DY		Vishay Siliconix	N-Channel 30-V (D-S) MOSFET		Original	PDF
Si4858DY SPICE Device Model		Vishay	N-Channel 30-V (D-S) MOSFET		Original	PDF
SI4858DY-T1-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 13A 8-SOIC		Original	PDF
SI4858DY-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 13A 8-SOIC		Original	PDF

SI4858DY Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Si4858DY Abstract: No abstract text available Text: SPICE Device Model Si4858DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4858DY 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: Si4858DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% RG Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.00525 @ VGS = 10 V 20 0.007 @ VGS = 4.5 V	Original	Si4858DY 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: Si4858DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.00525 at VGS = 10 V 20 0.007 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Optimized for "Low Side" Synchronous	Original	Si4858DY Si4858DY-T1-E3 Si4858DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Si4858DY Abstract: No abstract text available Text: \\\ SPICE Device Model Si4858DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4858DY 0-to-10V 10-May-02	PDF
Untitled Abstract: No abstract text available Text: Si4858DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% RG Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.00525 @ VGS = 10 V 20 0.007 @ VGS = 4.5 V	Original	Si4858DY 08-Apr-05	PDF
Si4858DY Abstract: Si4858DY-T1-E3 Si4858DY-T1-GE3 Text: Si4858DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.00525 at VGS = 10 V 20 0.007 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Optimized for "Low Side" Synchronous	Original	Si4858DY Si4858DY-T1-E3 Si4858DY-T1-GE3 18-Jul-08	PDF
Si4858DY Abstract: No abstract text available Text: Si4858DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% RG Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.00525 @ VGS = 10 V 20 0.007 @ VGS = 4.5 V	Original	Si4858DY S-03662--Rev. 14-Apr-03	PDF
Si4858DY Abstract: No abstract text available Text: Si4858DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.00525 @ VGS = 10 V 20 0.007 @ VGS = 4.5 V 17	Original	Si4858DY S-04489--Rev. 20-Aug-01	PDF
diode 1334 Abstract: AN609 Si4858DY Text: Si4858DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si4858DY AN609 14-May-07 diode 1334	PDF
Untitled Abstract: No abstract text available Text: Si4858DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.00525 at VGS = 10 V 20 0.007 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Optimized for "Low Side" Synchronous	Original	Si4858DY Si4858DY-T1-E3 Si4858DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Si4858DY Abstract: No abstract text available Text: SPICE Device Model Si4858DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4858DY S-60245Rev. 20-Feb-06	PDF
Untitled Abstract: No abstract text available Text: Si4858DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.00525 at VGS = 10 V 20 0.007 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Optimized for "Low Side" Synchronous	Original	Si4858DY Si4858DY-T1-E3 Si4858DY-T1-GE3 11-Mar-11	PDF
71917 Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller	Original	AN607 Si9137 SSOP-28 Si9910 Si9912 Si9913 10-Oct-02 71917 level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds	PDF
5a6 zener diode Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415 Text: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical	Original	Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415	PDF

q406 transistor Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no	Original	SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS	PDF
sud50n025-06p Abstract: SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud50n025-09p SI2301ADS SI4732CY si9110 Text: SELECTOR GUIDE V I S H A Y I N T E R T E C H N O L O G Y, I N C . Power MOSFETs for DC/DC Applications Siliconix LITTLE FOOT LITTLE FOOT® Plus Tr e n c h F E T ® WFET ChipFET® P ow e r PA K ® Application-Specific MOSFETs w w w. v i s h a y. c o m	Original	VSA-SG0019-0310 sud50n025-06p SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud50n025-09p SI2301ADS SI4732CY si9110	PDF
dale R012F Abstract: CRCW080510R0FRT1 CRCW08052002FRT1 594D227X010D2T 1N5819HW CRCW08051822FRT1 MIC2193 MIC2193BM Si4825DY Si4858DY Text: MIC2193 Evaluation Board Micrel MIC2193 Evaluation Board 400kHz SO-8 Synchronous Buck Control IC Introduction Quick-Start Guide Refer to Figure 1 for the following: 1. Connect the positive terminal from the power supply to VIN post J1 on the MIC2193 evaluation board.	Original	MIC2193 400kHz dale R012F CRCW080510R0FRT1 CRCW08052002FRT1 594D227X010D2T 1N5819HW CRCW08051822FRT1 MIC2193BM Si4825DY Si4858DY	PDF