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    SI4470EY Search Results

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    SI4470EY Price and Stock

    Vishay Siliconix SI4470EY-T1-E3

    MOSFET N-CH 60V 9A 8SO
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    DigiKey SI4470EY-T1-E3 Reel 2,500
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    SI4470EY-T1-E3 Digi-Reel 1
    • 1 $1.82
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    SI4470EY-T1-E3 Cut Tape 1
    • 1 $1.82
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    RS SI4470EY-T1-E3 Bulk 2,500
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    Vishay Siliconix SI4470EY-T1-GE3

    MOSFET N-CH 60V 9A 8SO
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    DigiKey SI4470EY-T1-GE3 Reel 2,500
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    SI4470EY-T1-GE3 Digi-Reel 1
    • 1 $1.82
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    SI4470EY-T1-GE3 Cut Tape 1
    • 1 $1.82
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    Vishay Intertechnologies SI4470EY-T1-E3

    Trans MOSFET N-CH 60V 9A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4470EY-T1-E3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI4470EY-T1-E3 Reel 2,500
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    Quest Components SI4470EY-T1-E3 350
    • 1 $2.0813
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    Chip 1 Exchange SI4470EY-T1-E3 2,463
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    Vishay Intertechnologies SI4470EY-T1

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    Bristol Electronics SI4470EY-T1 1,085
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    Quest Components SI4470EY-T1 1,444
    • 1 $2.8
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    Vishay Siliconix SI4470EY-T1

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    Bristol Electronics SI4470EY-T1 780
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    SI4470EY Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si4470EY Vishay Intertechnology N-Channel 60-V (D-S) MOSFET Original PDF
    SI4470EY Vishay Siliconix N-Channel 60-V (D-S) MOSFET Original PDF
    Si4470EY SPICE Device Model Vishay N-Channel 60-V (D-S) MOSFET Original PDF
    SI4470EY-T1 Vishay Siliconix N-Channel 60-V (D-S) MOSFET Original PDF
    SI4470EY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 9A 8-SOIC Original PDF
    SI4470EY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 9A 8-SOIC Original PDF

    SI4470EY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SI4470EY-T1-E3

    Abstract: Si4470EY
    Text: Si4470EY Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.011 at VGS = 10 V 12.7 0.013 at VGS = 6.0 V 11.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature


    Original     		PDF Si4470EY 2002/95/EC Si4470EY-T1-E3 Si4470EY-T1-GE3 18-Jul-08

    Si4470EY

    Abstract: Si4470EY-T1
    Text: Si4470EY Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 D TrenchFETr Power MOSFETS D Extended Temperature Range rDS(on) (W) ID (A) 0.011 @ VGS = 10 V 12.7 APPLICATION 0.013 @ VGS = 6.0 V 11.7 D Primary Side Switch D SO-8 S


    Original     		PDF Si4470EY Si4470EY-T1 18-Jul-08

    7476 data sheet

    Abstract: 7476 APPLICATION NOTES 7476 data sheet 7476 m 923 Si4470EY AN609 74305
    Text: Si4470EY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4470EY AN609 08-May-07 7476 data sheet 7476 APPLICATION NOTES 7476 data sheet 7476 m 923 74305

    si4470ey-t1-e3

    Abstract: No abstract text available
    Text: Si4470EY Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) () ID (A) 0.011 at VGS = 10 V 12.7 0.013 at VGS = 6.0 V 11.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature


    Original     		PDF Si4470EY 2002/95/EC Si4470EY-T1-E3 Si4470EY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si4470EY

    Abstract: Si4470EY-T1
    Text: Si4470EY Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 D TrenchFETr Power MOSFETS D Extended Temperature Range rDS(on) (W) ID (A) 0.011 @ VGS = 10 V 12.7 APPLICATION 0.013 @ VGS = 6.0 V 11.7 D Primary Side Switch D SO-8 S


    Original     		PDF Si4470EY Si4470EY-T1 S-03951--Rev. 26-May-03

    Untitled

    Abstract: No abstract text available
    Text: Si4470EY Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) () ID (A) 0.011 at VGS = 10 V 12.7 0.013 at VGS = 6.0 V 11.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature


    Original     		PDF Si4470EY 2002/95/EC Si4470EY-T1-E3 Si4470EY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4470EY

    Abstract: No abstract text available
    Text: Si4470EY Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) () ID (A) 0.011 at VGS = 10 V 12.7 0.013 at VGS = 6.0 V 11.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature


    Original     		PDF Si4470EY 2002/95/EC Si4470EY-T1-E3 Si4470EY-T1-GE3 11-Mar-11

    Si4470EY

    Abstract: No abstract text available
    Text: Si4470EY New Product Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 D TrenchFETr Power MOSFETS D Extended Temperature Range rDS(on) (W) ID (A) 0.011 @ VGS = 10 V 12.7 APPLICATION 0.013 @ VGS = 6.0 V 11.7 D Primary Side Switch


    Original     		PDF Si4470EY S-03711--Rev. 14-May-01

    Si4470EY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4470EY Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4470EY 11-May-01

    Si4470EY

    Abstract: Si4470EY-T1
    Text: Si4470EY Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 D TrenchFETr Power MOSFETS D Extended Temperature Range rDS(on) (W) ID (A) 0.011 @ VGS = 10 V 12.7 APPLICATION 0.013 @ VGS = 6.0 V 11.7 D Primary Side Switch D SO-8 S


    Original     		PDF Si4470EY Si4470EY-T1 08-Apr-05

    Si4470EY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4470EY Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4470EY 18-Jul-08

    Si4470EY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4470EY Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4470EY S-51095Rev. 13-Jun-05

    Untitled

    Abstract: No abstract text available
    Text: Si4470EY Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) () ID (A) 0.011 at VGS = 10 V 12.7 0.013 at VGS = 6.0 V 11.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature


    Original     		PDF Si4470EY 2002/95/EC Si4470EY-T1-E3 Si4470EY-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4470EY Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) () ID (A) 0.011 at VGS = 10 V 12.7 0.013 at VGS = 6.0 V 11.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature


    Original     		PDF Si4470EY 2002/95/EC Si4470EY-T1-E3 Si4470EY-T1-GE3 11-Mar-11

    340 opto isolator

    Abstract: adapter 12v,2A 5V,2A kelvin 1102 HD01 LTC4269-1 LTC4269C-1 LTC4269CDKD-1 LTC4269I-1 LTC4269IDKD-1 PA1558NL
    Text: LTC4269-1 IEEE 802.3at PD with Synchronous No-Opto Flyback Controller DESCRIPTION FEATURES n n n n n n n n n n n n The LTC 4269-1 is an integrated Powered Device PD controller and switching regulator intended for high power IEEE 802.3at and 802.3af applications. The


    Original     		PDF LTC4269-1 LTC4269-1 LTC4268-1 750mA LTC4269-2 100kHz 500kHz 42691fb 340 opto isolator adapter 12v,2A 5V,2A kelvin 1102 HD01 LTC4269C-1 LTC4269CDKD-1 LTC4269I-1 LTC4269IDKD-1 PA1558NL

    71917

    Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
    Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller


    Original     		PDF AN607 Si9137 SSOP-28 Si9910 Si9912 Si9913 10-Oct-02 71917 level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds

    R012F

    Abstract: Siliconix mosfet guide XSTR C3225X5R1C226M LT3825 100ME22AX res 0603
    Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 894A-C 36V-72VIN, SYNCHRONOUS FLYBACK LT3825 DESCRIPTION Demonstration circuit 894A-C is a 36V-72Vin, synchronous flyback converter featuring the LT3825. This circuit was designed specifically to attain a high current, low ripple, synchronously rectified flyback to


    Original     		PDF 94A-C 6V-72VIN, LT3825 94A-C LT3825. 100ME22AXTS IHPL2525CZER4R7M01 R012F Siliconix mosfet guide XSTR C3225X5R1C226M LT3825 100ME22AX res 0603

    5a6 zener diode

    Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
    Text: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical


    Original     		PDF Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415

    front end ieee

    Abstract: ptz schematic diagram "power sourcing equipment"
    Text: LTC4268-1 High Power PD With Synchronous No-Opto Flyback Controller Description Features Robust 35W PD Front End IEEE 802.3af Compliant n Rugged 750mA Power MOSFET With Precision Dual Level Current Limit n High Performance Synchronous Flyback Controller n IEEE Isolation Obtained Without an Opto-Isolator


    Original     		PDF 750mA 50kHz 250kHz 32-Pin LTC4268-1 12-Port LTC4267-1 LTC4267-3 LTC4269-1 LTC4269-2 front end ieee ptz schematic diagram "power sourcing equipment"

    CHSD6-60C

    Abstract: CHSD6 a26544 C0805C473K5RAC CMPZ524B 1808JA250102MCTPY2 LM5072 PJ-102A LM5073 LM5576
    Text: National Semiconductor Application Note 1574 Youhao Xi March 2007 Introduction Precautions The LM5073 evaluation board is designed as a low cost solution for both IEEE802.3af fully compliant and non-compliant Power over Ethernet PoE PD applications. The board also


    Original     		PDF LM5073 IEEE802 LM5576 AN-1574 CHSD6-60C CHSD6 a26544 C0805C473K5RAC CMPZ524B 1808JA250102MCTPY2 LM5072 PJ-102A

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    U401 mosfet

    Abstract: 10uf 25V electrolytic capacitor Power Jack 300 inverter schematic electrolytic capacitor 2200uf/50V power supply with regulator D313 mc33883 circuits smd diode R645 capacitor 2200uf/50v 2238 580 15623 MC33883
    Text: 3-Phase Power Stage with DC/DC Inverter Lite User’s Manual 56800 Hybrid Controller TPPSDDILUM Rev. 0 3/2006 freescale.com 3-Phase Power Stage with DC/DC Inverter Lite User’s Manual To provide the most up-to-date information, the revision of our documents on the World Wide Web will be


    Original     		PDF

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


    Original     		PDF SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2