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    SI4398DY Search Results

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    SI4398DY Price and Stock

    Vishay Siliconix SI4398DY-T1-E3

    MOSFET N-CH 20V 19A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4398DY-T1-E3 Cut Tape 1
    • 1 $3.32
    • 10 $3.32
    • 100 $3.32
    • 1000 $3.32
    • 10000 $3.32
    		Buy Now
    SI4398DY-T1-E3 Digi-Reel 1
    • 1 $3.32
    • 10 $3.32
    • 100 $3.32
    • 1000 $3.32
    • 10000 $3.32
    		Buy Now
    SI4398DY-T1-E3 Reel 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.54045
    		Buy Now

    Vishay Siliconix SI4398DY-T1-GE3

    MOSFET N-CH 20V 19A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4398DY-T1-GE3 Reel 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.54045
    		Buy Now

    Vishay Intertechnologies SI4398DY-E3

    Trans MOSFET N-CH 20V 19A 8-Pin SOIC N - Rail/Tube (Alt: SI4398DY-E3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI4398DY-E3 Tube 100
    • 1 -
    • 10 -
    • 100 $2.1573
    • 1000 $1.9584
    • 10000 $1.9125
    		Buy Now

    SI4398DY Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI4398DY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 19A 8-SOIC Original PDF
    SI4398DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 19A 8-SOIC Original PDF

    SI4398DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si4398DY

    Abstract: Si4398DY-T1-E3
    Text: New Product Si4398DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V 20 rDS(on) (Ω) ID (A) 0.0028 at VGS = 10 V 25 0.0040 at VGS = 4.5 V 22 • Extremely Low Qgd WFET Technology for Switching Losses • Ultra-Low On-Resistance


    Original     		PDF Si4398DY Si4398DY-T1-E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si4398DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 20 RDS(on) (Ω) ID (A) 0.0028 at VGS = 10 V 25 0.0040 at VGS = 4.5 V 22 • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses


    Original     		PDF Si4398DY 2002/95/EC Si4398DY-T1-E3 Si4398DY-T1-GE3 11-Mar-11

    C 4977

    Abstract: AN609 Si4398DY
    Text: Si4398DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4398DY AN609 26-Sep-07 C 4977

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4398DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4398DY S-72400ï 26-Nov-07

    70302

    Abstract: S70302 si4398
    Text: New Product Si4398DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V 20 rDS(on) (Ω) ID (A) 0.0028 at VGS = 10 V 25 0.0040 at VGS = 4.5 V 22 • Extremely Low Qgd WFET Technology for Switching Losses • Ultra-Low On-Resistance


    Original     		PDF Si4398DY Si4398DY-T1-E3 18-Jul-08 70302 S70302 si4398

    Untitled

    Abstract: No abstract text available
    Text: Si4398DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V 20 RDS(on) (Ω) ID (A) 0.0028 at VGS = 10 V 25 0.0040 at VGS = 4.5 V 22 • Halogen-free According to IEC 61249-2-21 Available • Extremely Low Qgd WFET Technology for


    Original     		PDF Si4398DY Si4398DY-T1-E3 Si4398DY-T1-GE3 11-Mar-11

    Si4398DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4398DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4398DY 18-Jul-08

    Si4398DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4398DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4398DY S-51095Rev. 13-Jun-05

    Untitled

    Abstract: No abstract text available
    Text: Si4398DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 20 RDS(on) (Ω) ID (A) 0.0028 at VGS = 10 V 25 0.0040 at VGS = 4.5 V 22 • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses


    Original     		PDF Si4398DY 2002/95/EC Si4398DY-T1-E3 Si4398DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si4398DY

    Abstract: Si4398DY-T1-E3 Si4398DY-T1-GE3
    Text: Si4398DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V 20 RDS(on) (Ω) ID (A) 0.0028 at VGS = 10 V 25 0.0040 at VGS = 4.5 V 22 • Halogen-free According to IEC 61249-2-21 Available • Extremely Low Qgd WFET Technology for


    Original     		PDF Si4398DY Si4398DY-T1-E3 Si4398DY-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4398DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 20 RDS(on) (Ω) ID (A) 0.0028 at VGS = 10 V 25 0.0040 at VGS = 4.5 V 22 • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses


    Original     		PDF Si4398DY 2002/95/EC Si4398DY-T1-E3 Si4398DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


    Original     		PDF SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3

    Power MOSFET

    Abstract: mosfet switch Schottky Diode 40V 2A schottky diode 30v MOSFET
    Text: POL Power Table of Contents BOOTSTRAP, Diodes. 3 CONTROLLERS, Current Sense Resistors. 4


    Original     		PDF Si4642DY SiE726DF 1-1500uF 47-680uF Power MOSFET mosfet switch Schottky Diode 40V 2A schottky diode 30v MOSFET

    bridge rectifier 24V AC to 24v dc

    Abstract: 1N5408 smd diodes GSIB1560
    Text: Switch Mode Power Supply Table of Contents ADAPTOR, Buck Capacitance. 3 ADAPTOR, EMI Filtering. 4


    Original     		PDF 250ns; DO-204AL DO-41) DO-220AA V-540V; V-440V bridge rectifier 24V AC to 24v dc 1N5408 smd diodes GSIB1560

    gs 069

    Abstract: PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04
    Text: N-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SC-75 SC-75A SC-89 gs 069 PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04