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    SI4378DY Price and Stock

    Vishay Siliconix SI4378DY-T1-E3

    MOSFET N-CH 20V 19A 8SO
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    DigiKey SI4378DY-T1-E3 Cut Tape
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    SI4378DY-T1-E3 Digi-Reel 1
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    ES Components SI4378DY-T1-E3
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    Vishay Siliconix SI4378DY-T1-GE3

    MOSFET N-CH 20V 19A 8SO
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    SI4378DY-T1-GE3 Digi-Reel 1
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    ES Components SI4378DY-T1-GE3
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    Vishay Intertechnologies SI4378DY-T1-E3

    Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:19A; On Resistance Rds(On):0.0022Ohm; Transistor Mounting:Surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:600Mv Rohs Compliant: Yes |Vishay SI4378DY-T1-E3
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    Newark SI4378DY-T1-E3 Cut Tape 2,500
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    Bristol Electronics SI4378DY-T1-E3 2,500
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    Quest Components SI4378DY-T1-E3 2,000
    • 1 $3.39
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    Vishay Siliconix SI4378DYT1E3

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    Bristol Electronics SI4378DYT1E3 203
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    Vishay Siliconix SI4378DY-E3

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    Bristol Electronics SI4378DY-E3 203
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    SI4378DY Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI4378DY Vishay Siliconix MOSFETs Original PDF
    Si4378DY-E3 Vishay N-Channel 20-V (D-S) MOSFET Original PDF
    SI4378DY_RC Vishay Siliconix R-C Thermal Model Parameters Original PDF
    Si4378DY-T1-E3 Vishay N-Channel 20-V (D-S) MOSFET Original PDF
    SI4378DY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 19A 8-SOIC Original PDF
    SI4378DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 19A 8-SOIC Original PDF

    SI4378DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si4378DY Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.0027 at VGS = 4.5 V 25 0.0042 at VGS = 2.5 V 22 • Ultra Low On-Resistance Using High Density TrenchFET Gen II Power MOSFET Technology


    Original
    PDF Si4378DY Si4378DY-T1-E3 18-Jul-08

    Si4378DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4378DY Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si4378DY 18-Jul-08

    Si4378DY

    Abstract: Si4378DY-T1-E3 Si4378DY-T1-GE3
    Text: Si4378DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.0027 at VGS = 4.5 V 25 0.0042 at VGS = 2.5 V 22 • Halogen-free According to IEC 61249-2-21 Available • Ultra Low On-Resistance Using High Density TrenchFET Gen II Power MOSFET


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    PDF Si4378DY Si4378DY-T1-E3 Si4378DY-T1-GE3 18-Jul-08

    Si4378DY

    Abstract: Si4378DY-T1-E3
    Text: Si4378DY Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.0027 at VGS = 4.5 V 25 0.0042 at VGS = 2.5 V 22 • Ultra Low On-Resistance Using High Density TrenchFET Gen II Power MOSFET Technology


    Original
    PDF Si4378DY Si4378DY-T1-E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si4378DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.0027 at VGS = 4.5 V 25 0.0042 at VGS = 2.5 V 22 • Halogen-free According to IEC 61249-2-21 Available • Ultra Low On-Resistance Using High Density TrenchFET Gen II Power MOSFET


    Original
    PDF Si4378DY Si4378DY-T1-E3 Si4378DY-T1-GE3 11-Mar-11

    Si4378DY

    Abstract: Si4378DY-T1-E3 Si4378DY-T1-GE3
    Text: Si4378DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.0027 at VGS = 4.5 V 25 0.0042 at VGS = 2.5 V 22 • Halogen-free According to IEC 61249-2-21 Available • Ultra Low On-Resistance Using High Density TrenchFET Gen II Power MOSFET


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    PDF Si4378DY Si4378DY-T1-E3 Si4378DY-T1-GE3 11-Mar-11

    Si4378DY-T1-E3

    Abstract: Si4378DY
    Text: Si4378DY New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0027 @ VGS = 4.5 V 25 0.0042 @ VGS = 2.5 V 22 D Ultra Low On-Resistance Using High Density TrenchFETr Gen II Power MOSFET Technology


    Original
    PDF Si4378DY Si4378DY--E3 Si4378DY-T1--E3 S-40854--Rev. 03-May-04 Si4378DY-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: Si4378DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.0027 at VGS = 4.5 V 25 0.0042 at VGS = 2.5 V 22 • Halogen-free According to IEC 61249-2-21 Available • Ultra Low On-Resistance Using High Density TrenchFET Gen II Power MOSFET


    Original
    PDF Si4378DY Si4378DY-T1-E3 Si4378DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4378DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.0027 at VGS = 4.5 V 25 0.0042 at VGS = 2.5 V 22 • Halogen-free According to IEC 61249-2-21 Available • Ultra Low On-Resistance Using High Density TrenchFET Gen II Power MOSFET


    Original
    PDF Si4378DY Si4378DY-T1-E3 Si4378DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    CT1-20

    Abstract: AN609 Si4378DY 73820
    Text: Si4378DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    PDF Si4378DY AN609 02-Mar-06 CT1-20 73820

    Si4378DY

    Abstract: A146
    Text: SPICE Device Model Si4378DY Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si4378DY S-50836Rev. 16-May-05 A146

    Untitled

    Abstract: No abstract text available
    Text: Si4378DY New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0027 @ VGS = 4.5 V 25 0.0042 @ VGS = 2.5 V 22 D Ultra Low On-Resistance Using High Density TrenchFETr Gen II Power MOSFET Technology


    Original
    PDF Si4378DY Si4378DY--E3 Si4378DY-T1--E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: 19-3443; Rev 1; 6/06 1V to 13.2V, n-Channel Hot-Swap Controllers Require No Sense Resistor The MAX5924/MAX5925/MAX5926 1V to 13.2V hot-swap controllers allow the safe insertion and removal of circuit cards into live backplanes. These devices hot swap supplies ranging from 1V to 13.2V provided that the device


    Original
    PDF MAX5924/MAX5925/MAX5926

    Untitled

    Abstract: No abstract text available
    Text: KIT ATION EVALU E L B A IL AVA 19-3443; Rev 3; 4/10 1V to 13.2V, n-Channel Hot-Swap Controllers Require No Sense Resistor The MAX5924/MAX5925/MAX5926 1V to 13.2V hot-swap controllers allow the safe insertion and removal of circuit cards into live backplanes. These devices hot swap supplies ranging from 1V to 13.2V provided that the device


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    PDF MAX5924/MAX5925/MAX5926 MAX5924BEUB MAX5924/MAX5925/MAX5926

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


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    PDF SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3

    BC240A

    Abstract: MAX5926 MAX5924 MAX5924AEUB MAX5924BEUB MAX5924CEUB MAX5924DEUB MAX5925 MAX5925AEUB
    Text: KIT ATION EVALU E L B AVAILA 19-3443; Rev 2; 10/06 1V to 13.2V, n-Channel Hot-Swap Controllers Require No Sense Resistor The MAX5924/MAX5925/MAX5926 1V to 13.2V hot-swap controllers allow the safe insertion and removal of circuit cards into live backplanes. These devices hot swap supplies ranging from 1V to 13.2V provided that the device


    Original
    PDF MAX5924/MAX5925/MAX5926 5925/MAX5926 BC240A MAX5926 MAX5924 MAX5924AEUB MAX5924BEUB MAX5924CEUB MAX5924DEUB MAX5925 MAX5925AEUB

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


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    PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


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    PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    Untitled

    Abstract: No abstract text available
    Text: 19-3443; Rev 2; 10/06 1V to 13.2V, n-Channel Hot-Swap Controllers Require No Sense Resistor The MAX5924/MAX5925/MAX5926 1V to 13.2V hot-swap controllers allow the safe insertion and removal of circuit cards into live backplanes. These devices hot swap supplies ranging from 1V to 13.2V provided that the device


    Original
    PDF MAX5924/MAX5925/MAX5926

    Untitled

    Abstract: No abstract text available
    Text: KIT ATION EVALU E L B AVAILA 19-3443; Rev 2; 10/06 1V to 13.2V, n-Channel Hot-Swap Controllers Require No Sense Resistor The MAX5924/MAX5925/MAX5926 1V to 13.2V hot-swap controllers allow the safe insertion and removal of circuit cards into live backplanes. These devices hot swap supplies ranging from 1V to 13.2V provided that the device


    Original
    PDF MAX5924/MAX5925/MAX5926

    MAX5926

    Abstract: No abstract text available
    Text: 19-3443; Rev 0; 10/04 1V to 13.2V, n-Channel Hot-Swap Controllers Require No Sense Resistor The MAX5924/MAX5925/MAX5926 are available with open-drain PGOOD and/or PGOOD outputs. The devices also feature a circuit breaker with temperaturecompensated RDS ON sensing. The MAX5926 features


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    PDF MAX5924/MAX5925/MAX5926 MAX5926 3300ppm/ MAX5924 MAX5925 MAX5924/MAX5925/MAX5926

    MAX5926

    Abstract: MAX5924 MAX5924AEUB MAX5924BEUB MAX5924CEUB MAX5924DEUB MAX5925 MAX5925AEUB
    Text: KIT ATION EVALU E L B A IL AVA 19-3443; Rev 3; 4/10 1V to 13.2V, n-Channel Hot-Swap Controllers Require No Sense Resistor The MAX5924/MAX5925/MAX5926 1V to 13.2V hot-swap controllers allow the safe insertion and removal of circuit cards into live backplanes. These devices hot swap supplies ranging from 1V to 13.2V provided that the device


    Original
    PDF MAX5924/MAX5925/MAX5926 MAX5924BEUB MAX5924/MAX5925/MAX5926 MAX5926 MAX5924 MAX5924AEUB MAX5924CEUB MAX5924DEUB MAX5925 MAX5925AEUB

    q406 transistor

    Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
    Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


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    PDF SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS

    Power MOSFET

    Abstract: mosfet switch Schottky Diode 40V 2A schottky diode 30v MOSFET
    Text: POL Power Table of Contents BOOTSTRAP, Diodes. 3 CONTROLLERS, Current Sense Resistors. 4


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    PDF Si4642DY SiE726DF 1-1500uF 47-680uF Power MOSFET mosfet switch Schottky Diode 40V 2A schottky diode 30v MOSFET