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    SI4038DY Price and Stock

    Vishay Siliconix SI4038DY-T1-GE3

    MOSFET N-CH 40V 42.5A 8SO
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    DigiKey SI4038DY-T1-GE3 Cut Tape 1
    • 1 $1.31
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    SI4038DY-T1-GE3 Digi-Reel 1
    • 1 $1.31
    • 10 $1.31
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    • 1000 $1.31
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    SI4038DY-T1-GE3 Reel 5,000
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    Vishay Intertechnologies SI4038DY-T1-GE3

    Trans MOSFET N-CH 40V 28.4A 8-Pin SO T/R - Tape and Reel (Alt: SI4038DY-T1-GE3)
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    Avnet Americas SI4038DY-T1-GE3 Reel 26 Weeks 5,000
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    • 10000 $1.21166
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    SI4038DY-T1-GE3 Reel 26 Weeks 5,000
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    TTI SI4038DY-T1-GE3 Reel 5,000
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    EBV Elektronik SI4038DY-T1-GE3 29 Weeks 2,500
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    SI4038DY Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI4038DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 42.5A SO-8 Original PDF

    SI4038DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si4038DY Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () Max. ID (A)a 0.0024 at VGS = 10 V 42.5 0.0032 at VGS = 4.5 V 36.8 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:


    Original     		PDF Si4038DY Si4038DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4038DY www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		PDF Si4038DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    PowerPAK 1212-8

    Abstract: sir640 SiA442DJ SO8L PowerPAK SO-8 Si4038DY SUM90N06-02P SiS488DN
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Low RDS ON of 1.7 mΩ @ 40 V and 2.7 mΩ @ 60 V I INNOVAT AND TEC O L OGY 40 V and 60 V TrenchFET Gen IV N HN POWER MOSFETs O 19 62-2012 Higher Efficiency and Power Density with a Combination of


    Original     		PDF SC-70 O-220 O-236 SiR640DP Si4038DY SiS488DN SiR662DP SUP90N06-02P SUM90N06-02P Si4062DY PowerPAK 1212-8 sir640 SiA442DJ SO8L PowerPAK SO-8

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs – Low RDS on of 1.7 mΩ @ 40 V and 2.7 mΩ @ 60 V 40 V and 60 V TrenchFET Gen IV Higher Efficiency and Power Density with a Combination of Low RDS(on) and Excellent Dynamic Characteristics


    Original     		PDF SiR640DP Si4038DY SiS488DN SiR662DP O-220 O-263 SUP90N06-02P SUM90N06-02P Si4062DY SiJ462DP

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs 40 V, 60 V, and 80 V TrenchFET Gen IV Higher Efficiency and Power Density with Low RDS on and Excellent Dynamic Characteristics KEY BENEFITS • Reduce power loss from conduction with 40 % lower RDS(on) than previous-generation device. 60 V MOSFETs


    Original     		PDF O-263) Si4038DY SiS488DN SUM50020EL SUP50020EL SiR662DP SiR688DP SiR664DP SiJ462DP SiS862DN

    N-Channel MOSFETs

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in


    Original     		PDF SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs