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    SI3454CDV Price and Stock

    Vishay Siliconix SI3454CDV-T1-E3

    MOSFET N-CH 30V 4.2A 6TSOP
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    Vishay Siliconix SI3454CDV-T1-GE3

    MOSFET N-CH 30V 4.2A 6TSOP
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    SI3454CDV Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI3454CDV-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 4.2A 6TSOP Original PDF
    SI3454CDV-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 4.2A 6TSOP Original PDF

    SI3454CDV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    0828

    Abstract: 8385 Datasheets 7457 AN609
    Text: Si3454CDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When


    Original     		PDF Si3454CDV AN609, 24-Apr-08 0828 8385 Datasheets 7457 AN609

    GFS-8

    Abstract: Si3454ADV Si3454ADV-T1 Si3454ADV-T1-E3
    Text: Specification Comparison Vishay Siliconix Si3454CDV vs. Si3454ADV Description: Package: Pin Out: N-Channel, 30-V D-S MOSFET TSOP-6 Identical Part Number Replacements: Si3454CDV-T1-E3 replaces Si3454ADV-T1-E3 Si3454CDV-T1-E3 replaces Si3454ADV-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si3454CDV Si3454ADV Si3454CDV-T1-E3 Si3454ADV-T1-E3 Si3454ADV-T1 28-May-08 GFS-8

    SI3454CDV

    Abstract: S-8119
    Text: New Product Si3454CDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.050 at VGS = 10 V 4.2 0.079 at VGS = 4.5 V 3.0 VDS (V) 30 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) 2.6 RoHS APPLICATIONS COMPLIANT


    Original     		PDF Si3454CDV Si3454CDV-T1-E3 18-Jul-08 S-8119

    6840-1

    Abstract: No abstract text available
    Text: SPICE Device Model Si3454CDV Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3454CDV 18-Jul-08 6840-1

    Untitled

    Abstract: No abstract text available
    Text: Si3454CDV Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.050 at VGS = 10 V 4.2 0.079 at VGS = 4.5 V 3.0 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si3454CDV 2002/95/EC Si3454CDV-T1-E3 Si3454CDV-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si3454CDV Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.050 at VGS = 10 V 4.2 0.079 at VGS = 4.5 V 3.0 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si3454CDV 2002/95/EC Si3454CDV-T1-E3 Si3454CDV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si3454CDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.050 at VGS = 10 V 4.2 0.079 at VGS = 4.5 V 3.0 VDS (V) 30 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) 2.6 RoHS APPLICATIONS COMPLIANT


    Original     		PDF Si3454CDV Si3454CDV-T1-E3 08-Apr-05

    SI3454CDV

    Abstract: SI3454CDVT1
    Text: Si3454CDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.050 at VGS = 10 V 4.2 0.079 at VGS = 4.5 V 3.0 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si3454CDV 2002/95/EC Si3454CDV-T1-E3 Si3454CDV-T1-GE3 18-Jul-08 SI3454CDVT1

    Untitled

    Abstract: No abstract text available
    Text: Si3454CDV Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.050 at VGS = 10 V 4.2 0.079 at VGS = 4.5 V 3.0 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si3454CDV 2002/95/EC Si3454CDV-T1-E3 Si3454CDV-T1-GE3 11-Mar-11

    TSOP6 Marking AV

    Abstract: No abstract text available
    Text: Si3454CDV Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.050 at VGS = 10 V 4.2 0.079 at VGS = 4.5 V 3.0 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si3454CDV 2002/95/EC Si3454CDV-T1-E3 Si3454CDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TSOP6 Marking AV

    BSS138 NXP

    Abstract: FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250
    Text: NXP small-signal N- and P-channel MOSFETs Small-signal MOSFETs optimized for a broad range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today’s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety


    Original     		PDF OT223 OT883 PHT8N06LT BSP030 PMN50XP PMN55LN PMN34LN BSH103 BSS138 NXP FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250