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    STD15N06 Search Results

    STD15N06 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STD15N06 STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STD15N06 STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STD15N06-1 STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor Original PDF
    STD15N06L STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STD15N06L STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STD15N06L-1 STMicroelectronics N-Channel Enhancement Mode Low Threshold Power MOS Transistor Original PDF
    STD15N06LT4 STMicroelectronics N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR Original PDF
    STD15N06LT4 STMicroelectronics N-Channel Enhancement Mode Low Threshold Power MOS Transistor Original PDF
    STD15N06T4 STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor Original PDF
    STD15N06T4 STMicroelectronics N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Original PDF

    STD15N06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STD15N06

    Abstract: No abstract text available
    Text: STD15N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS R DS on ID STD15N06 60 V < 0.1 Ω 15 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.075 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF STD15N06 100oC 175oC O-251) O-252) STD15N06

    STD15N06

    Abstract: No abstract text available
    Text: STD15N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS on ID STD15N06 60 V < 0.1 Ω 15 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.075 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF STD15N06 100oC 175oC O-251) O-252) O-251 O-252 STD15N06

    STD15N06L

    Abstract: No abstract text available
    Text: STD15N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STD15N06L • ■ ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.1 Ω 15 A TYPICAL RDS(on) = 0.075 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF STD15N06L 100oC 175oC O-251) O-252) O-251 O-252 STD15N06L

    STD15N06L

    Abstract: No abstract text available
    Text: STD15N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STD15N06L • ■ ■ ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V < 0.1 Ω 15 A TYPICAL RDS(on) = 0.075 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF STD15N06L 100oC 175oC O-251) O-252) STD15N06L

    ste30na50

    Abstract: STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20
    Text: SOT-223 VDSS RDS on max (V) (Ω) 30 0.05 0.06 0.12 0.12 0.12 0.27 0.45 1.50 20.0 60 100 200 800 Type STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN3NE06L STN2N10 STN2NE10L ✠ STN1N20 STN1NB80 ✠ ID(cont) DEVICES (A) REPLACED 4.0 4.0 3.0 3.0 3.0 2.0 2.0 1.0


    Original     		PDF OT-223 STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN2N10 STN2NE10L STN1N20 STN1NB80 ste30na50 STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original     		PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR

    SSH6N80

    Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
    Text: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L


    Original     		PDF BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50

    SSH6N80

    Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
    Text: Power MOSFETs Cross Reference INDUSTY STANDARD 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 SSH6N80 IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON G ì S T D 15 N 06 L ill « ! N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STD15N06L V dss R DS on Id 60 V < 0.1 i i 15 A • TYPICAL RDS(on) = 0.075 Q. m AVALANCHE RUGGED TECHNOLOGY . . . . . . 100% AVALANCHE TESTED


    OCR Scan     		PDF STD15N06L O-251) O-252) O-252 0068772-B

    Untitled

    Abstract: No abstract text available
    Text: rzT SGS-THOMSON Ä 7# » œ s iL IC T r a ie S S T D 1 5 N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss RDS on S TD15N06 60 V < 0.1 n •d % 15 A Q . TYPICAL RDS(on) = 0.075 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF TD15N06 O-251) O-252) O-251 O-252 AN047 STD15N06 0068772-B 0DA1557