Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SPP08P06P Search Results

    SF Impression Pixel

    SPP08P06P Price and Stock

    Infineon Technologies AG SPP08P06PBKSA1

    MOSFET P-CH 60V 8.8A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPP08P06PBKSA1 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Infineon Technologies AG SPP08P06PHXKSA1

    MOSFET P-CH 60V 8.8A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPP08P06PHXKSA1 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Newark SPP08P06PHXKSA1 Bulk 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Bristol Electronics SPP08P06PHXKSA1 143
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Infineon Technologies AG SPP08P06PXK

    SPP08P06 - Power Field-Effect Transistor, 8.8A, 60V, 0.3ohm, P-Channel, MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics SPP08P06PXK 205 1
    • 1 $0.3208
    • 10 $0.3208
    • 100 $0.3016
    • 1000 $0.2727
    • 10000 $0.2727
    		Buy Now

    Infineon Technologies AG SPP08P06P

    SIPMOS POWER-TRANSISTOR Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SPP08P06P 385
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    SPP08P06P Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPP08P06P Infineon Technologies P-Channel Enhancement mode Avalanche rated d v/d t rated 175°C operating temperature Original PDF
    SPP08P06P Infineon Technologies P-Channel MOSFETs; Package: PG-TO220-3; Package: TO-220; VDS (max): -60.0 V; RDS (on) (max) (@10V): 300.0 mOhm; RDS (on) (max) (@4.5V): -; RDS (on) (max) (@2.5V): -; Original PDF
    SPP08P06PBKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 60V 8.8A TO-220AB Original PDF
    SPP08P06PH Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 8.8A TO-220 Original PDF
    SPP08P06PHXKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 60V 8.8A TO-220 Original PDF
    SPP08P06PXK Infineon Technologies P-CHANNEL POWER MOSFET Original PDF

    SPP08P06P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P-TO26

    Abstract: Q67040-S4233
    Text: SPP08P06P SPB08P06P SIPMOS  Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS -60 V · Enhancement mode Drain-source on-state resistance RDS on 0.3 W · Avalanche rated Continuous drain current ID -8.8 A · dv/dt rated ·


    Original     		PDF SPP08P06P SPB08P06P SPB08P06P P-TO220-3-1 Q67040-S4729 P-TO263-3-2 Q67040-S4233 P-TO26 Q67040-S4233

    SPP08P06P

    Abstract: *08P06P SPP08P06PH
    Text: SPP08P06P H SIPMOS  Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS -60 V · Enhancement mode Drain-source on-state resistance RDS on 0.3 W · Avalanche rated Continuous drain current ID -8.8 A · dv/dt rated · 175°C operating temperature


    Original     		PDF SPP08P06P IEC61249-2-21 PG-TO220-3 *08P06P SPP08P06PH

    SPP08P06P

    Abstract: SPP08P06P H PG-TO220-3
    Text: SPP08P06P G SIPMOS  Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS -60 V · Enhancement mode Drain-source on-state resistance RDS on 0.3 W · Avalanche rated Continuous drain current ID -8.8 A · dv/dt rated · 175°C operating temperature


    Original     		PDF SPP08P06P PG-TO220-3 SPP08P06P H PG-TO220-3

    *08P06P

    Abstract: SPP08P06P Q67040-S4729 spp08p
    Text: SPP08P06P SIPMOS  Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS -60 V · Enhancement mode Drain-source on-state resistance RDS on 0.3 W · Avalanche rated Continuous drain current ID -8.8 A · dv/dt rated · 175°C operating temperature


    Original     		PDF SPP08P06P PG-TO220-3-1 Q67040-S4729 *08P06P SPP08P06P Q67040-S4729 spp08p

    Untitled

    Abstract: No abstract text available
    Text: SPP08P06P G SIPMOS  Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS -60 V · Enhancement mode Drain-source on-state resistance RDS on 0.3 W · Avalanche rated Continuous drain current ID -8.8 A · dv/dt rated · 175°C operating temperature


    Original     		PDF SPP08P06P SPP08P06P PG-TO220-3

    Untitled

    Abstract: No abstract text available
    Text: SPP08P06P G SIPMOS  Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS -60 V · Enhancement mode Drain-source on-state resistance RDS on 0.3 W · Avalanche rated Continuous drain current ID -8.8 A · dv/dt rated · 175°C operating temperature


    Original     		PDF SPP08P06P SPP08P06P PG-TO220-3

    08p06p

    Abstract: TRANSISTOR C 460 Q67040-S4233 SPB08P06P
    Text: Preliminary Data SPP 08P06P SPB 08P06P SIPMOS Power Transistor • P-Channel • Enhancement mode • Avalanche rated • dv/dt rated • 175˚C operating temperature Type VDS ID RDS on SPP08P06P -60 V -8.8 A 0.3 Ω Pin 1 Pin 2 Pin 3 G D S Package Ordering Code


    Original     		PDF 08P06P 08P06P SPP08P06P SPB08P06P P-TO220-3-1 Q67040-S4729-A2 P-TO263-3-2 Q67040-S4233 TRANSISTOR C 460 Q67040-S4233

    Q67040-S4233

    Abstract: SPP08P06P SPB08P06P
    Text: SPP08P06P SPB08P06P Preliminary data SIPMOS  Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS -60 V · Enhancement mode Drain-source on-state resistance RDS on 0.3 W · Avalanche rated Continuous drain current ID -8.8 A ·


    Original     		PDF SPP08P06P SPB08P06P P-TO220-3-1 Q67040-S4729 P-TO263-3-2 Q67040-S4233 Q67040-S4233 SPP08P06P SPB08P06P

    SPP08P06P

    Abstract: *08P06P
    Text: SPP08P06P SIPMOS  Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS -60 V · Enhancement mode Drain-source on-state resistance RDS on 0.3 W · Avalanche rated Continuous drain current ID -8.8 A · dv/dt rated · 175°C operating temperature


    Original     		PDF SPP08P06P SPP08P06P P-TO220-3 *08P06P

    S 170 MOSFET TRANSISTOR

    Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book
    Text: Low Voltage ICs – Discretes: OptiMOS , OptiMOS ®2 Power Management & Supply DC/DC Selection Guide www.infineon.com/power May 2006 Introduction D C / D C C O N V E R S I O N plays a critical role in today’s applications such as desktop and notebook computers, consumer equipment, e.g. DVD players and


    Original     		PDF B152-H8203-G4-X-7600 S 170 MOSFET TRANSISTOR 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


    Original     		PDF

    3bs02

    Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather


    Original     		PDF Infineo866-95 B152-H8926-G2-X-7600 NB08-1069 3bs02 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    PG-TO263-3-2

    Abstract: SPB08P06P SPP08P06P
    Text: SPB08P06P SIPMOS  Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS -60 V · Enhancement mode Drain-source on-state resistance RDS on 0.3 W · Avalanche rated Continuous drain current ID -8.8 A · dv/dt rated · 175°C operating temperature


    Original     		PDF SPB08P06P P-TO263-3-2 Q67040-S4233 SPB08P06P PG-TO263-3-2 SP0000-96088 70angerous SPP08P06P

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


    Original     		PDF lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J

    600V igbt dc to dc buck converter

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
    Text: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]


    Original     		PDF B192-H6780-G11-X-7600 SP000008186 VDSL6100i-E 600V igbt dc to dc buck converter TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635

    ICE3B0365J

    Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)


    Original     		PDF SPP21N50C3 SPA21N50C3 SPI21N50C3 SPP16N50C3 SPA16N50C3 SPI16N50C3 SPW21N50C3 SPP12N50C3 SPA12N50C3 SPI12N50C3 ICE3B0365J ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP

    BUP213

    Abstract: BSS123L6327 BSS123E6327 bup314d IPD06N03LAG BSP170PE6327T BSP315 SPD06N80C3XT BSP295-L6327 BSP129E6327
    Text: Mosfets TO-218AB TO-220AB and TO-220 1-G TO-220FP TO-247 1 G 2 D 3 S 1-G 1-G 2-C 2-D 3-E TO-262 NEW! 3-S D-PAK, D2-PAK and TO-252 D D 2 S 3-S 3 SO-8 Dual G2 S2 1 3-D D2 D2 D 5 3-S 2-D G2 1 D 2 D G1 G 1 D1 4 3 2 2 1 G 6 7 D 8 D D 8 7 D 6 D 2-D 4 D D C 3 2S


    Original     		PDF O-218AB O-220AB O-220 O-220FP O-247 O-262 O-252 O-263 OT-323 OT-363 BUP213 BSS123L6327 BSS123E6327 bup314d IPD06N03LAG BSP170PE6327T BSP315 SPD06N80C3XT BSP295-L6327 BSP129E6327

    SPB08P06P

    Abstract: No abstract text available
    Text: Infineon SPP08P06P SPB08P06P Preliminary data technologies SIPMOS Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS -60 V • Enhancement mode Drain-Source on-state resistance ñ DS on 0.3 Q. • Avalanche rated Continuous drain current


    OCR Scan     		PDF SPP08P06P SPB08P06P P-T0220-3-1 Q67040-S4729 P-T0263-3-2 Q67040-S4233 SPB08P06P

    Q67040-S4729-A2

    Abstract: SPB08P06P Siemens 90 88 SPP08P06
    Text: SIEMENS SPP08P06P SPB08P06P Preliminary data SIPMOS Power Transistor • P-Channel • Enhancement mode V=TD5155 • Avalanche rated V P T 0 5 16 4 • dv/dt rated • 175°C operating temperature Type SPP08P06P VDS -60 V h -8.8 A ^DSiont 0.3 & Pin 1 Pin 2


    OCR Scan     		PDF SPP08P06P SPB08P06P SPB08P06P P-T0220-3-1 Q67040-S4729-A2 P-T0263-3-2 Siemens 90 88 SPP08P06

    IRF7205

    Abstract: IRF7342 IXTH7P50 T0-220AB BSS83 BSS84 irfp9240 IRF5210S IRFD9110 IRFD9210
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no TOKy lD Kofl: BSS84 BSS92 BS250 BSS83 IRF5210S IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRFD9014 BSP315P IRFD9024 IRF9610 IRFL9014 IRF9620 IRF9630 SI9953DY SI9948AEY


    OCR Scan     		PDF BSS84 BSS92 BS250 BSS83 IRF5210S T0263 IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRF7205 IRF7342 IXTH7P50 T0-220AB irfp9240

    T0252AA

    Abstract: T0263 IRF7205 BSS83 IRFR5305 T0-220AB IRF7204 IRF7304 SI4465DY SI4963DY
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4465D Y SI4965D Y IR F7204 IR F7304 SI4963D Y SI9430D Y SI9435D Y SI9933A D Y SI9953D Y IR F7205 IR F7406 IR F7416 S I4431A D Y


    OCR Scan     		PDF SI4465DY SI4965DY IRF7204 IRF7304 SI4963DY SI9430DY SI9435DY SI9933ADY SI9953DY IRF7205 T0252AA T0263 BSS83 IRFR5305 T0-220AB