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    S6516 Search Results

    S6516 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPS65163RGZR Texas Instruments 4-CH LCD Bias w/ Integrated 9-Channel Level Shifter 48-VQFN -40 to 85 Visit Texas Instruments
    TPS65168RSBR Texas Instruments High Resolution, Fully Programmable LCD Bias IC for TV 40-WQFN -40 to 85 Visit Texas Instruments Buy
    TPS65160PWPR Texas Instruments 4-CH LCD Bias (2.8A Min. Boost Ilim. Up to 20V, 2A Min. Buck Ilim) 28-HTSSOP -40 to 85 Visit Texas Instruments Buy
    TPS65162RGZR Texas Instruments 4-CH LCD Bias w/ Integrated Input-to-Output Isolation Switch, 2 Op-Amps & GPM 48-VQFN -40 to 85 Visit Texas Instruments Buy
    TPS65160APWP Texas Instruments 4-CH LCD Bias (2.8A Min. Boost Ilim. Up to 17.5V, 2A Min. Buck Ilim) 28-HTSSOP -40 to 85 Visit Texas Instruments Buy
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    S6516 Price and Stock

    Rochester Electronics LLC TPS65163RGZR

    SWITCHING REGULATOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TPS65163RGZR Bulk 120,000 77
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    • 100 $3.9
    • 1000 $3.9
    • 10000 $3.9
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    Rochester Electronics LLC TPS65167RHAR

    SWITCHING REGLTR, VOLTAGE-MODE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TPS65167RHAR Bulk 102,370 100
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    • 100 $3.03
    • 1000 $3.03
    • 10000 $3.03
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    Rochester Electronics LLC TPS65167ARHAR

    TPS65167A 4-CH LCD BIAS W/ FULLY
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TPS65167ARHAR Bulk 59,625 125
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    • 1000 $2.4
    • 10000 $2.4
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    Rochester Electronics LLC TPS65168RSBR

    TPS65168 HIGH RESOLUTION, FULLY
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TPS65168RSBR Bulk 33,000 260
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    • 1000 $1.15
    • 10000 $1.15
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    Rochester Electronics LLC TPS65160PWPR

    TPS65160 4-CH LCD BIAS (2.8A MIN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TPS65160PWPR Bulk 31,003 107
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    • 1000 $2.82
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    S6516 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MDM 6600

    Abstract: mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918
    Text: No. 9800-OERF-007 Replaces • Remplace • Substituye No. 9800-OERF-005 Dixie Electric Ltd. OEM CROSS REFERENCE GUIDE DE RÉFÉRENCE GUÍA DE REFERENCIA 2007 Index • Índice AGCO .1


    Original
    PDF 9800-OERF-007 9800-OERF-005 MDM 6600 mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918

    Untitled

    Abstract: No abstract text available
    Text: G M 71V 65163A G M 71V S65163A L 4,196,304 WORDS x 16 BIT LG S e m ïc o n Co., Ltd. w w .,f c .i w . CMOS DYNAMIC RAM Description Pin Configuration The GM71V S 65163A/AL is the new generation dynamic RAM organized 4,196,304 words by 16 bits. The GM71V(S)65163A/AL utilizes advanced


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    PDF 5163A S65163A GM71V 5163A/AL GM71V65163A GM71VS65163AL

    P241T

    Abstract: MS65
    Text: MOSEL / S6516 2K x 8 CMOS Static RAM FEATURES DESCRIPTION • Available in 100ns Max. version The M OSEL M S6516 is a high performance, low power CM O S static RAM organized as 2048 words by 8 bits. The device supports easy memory expansion with an active


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    PDF 100ns MS6516L 485mW MS6516 S6516 S6516L-10PC P24-1 PID003B P241T MS65

    Untitled

    Abstract: No abstract text available
    Text: •> GOULD AMI Semiconductors S6516 Preliminary Data Sheet 16,384 BIT 2048x8 STATIC CMOS RAM February 1985 Features □ Fast Access Time □ Low Power Standby □ Low Power Operation □ On-Chip Address Registers □ Low Voltage Data Retention -2 V □ Fully TTL Compatible Inputs


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    PDF S6516 2048x8) S6516

    ms6516l

    Abstract: MS6516L-10 MS6516L10PC 5PFE JR-101
    Text: MOSEL- VITEUC M S6516 2K x 8 CMOS STATIC RAM Features Description • Available in 100ns Max. version ■ Automatic power-down when chip disabled ■ Low power consumption (L-version): S6516L - 385mW (Max.) Operating - 1 1 mW (Max.) Standby - 55jiW (Max.) Power-down


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    PDF S6516 100ns MS6516L 385mW 55jiW MS6516 500mV MS6516L-10PC MS6516L-10SC MS6516L-10 MS6516L10PC 5PFE JR-101

    S-6516

    Abstract: No abstract text available
    Text: MOSEL M S6516 2K x 8 CMOS Static RAM FEATURES DESCRIPTION • Available in 100 and 120 ns Max. versions The MOSEL S6516 is a high performance, low power CMOS static RAM organized as 2048 words by 8 bits. The device supports easy memory expansion with an active


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    PDF S6516 385mW MS6516 S6516L-10PC S6516S-10PC S6516S-12SC S24-1 P24-1 PID003B S-6516

    MS6516L-10PC

    Abstract: MS6516L10PC MS6516L-10 TNC2 MS65 MS6516 ms6516l
    Text: MOSEL _ S6516 2K x 8 CMOS Static RAM FEATURES DESCRIPTION • Available in 100ns Max. version The MOSEL S6516 is a high performance, low power CMOS static RAM organized as 2048 words by 8 bits. The device supports easy memory expansion with an active


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    PDF MS6516 100ns MS6516L 485mW MS6516 500mV MS6516L-10PC P24-1 PID003B MS6516L10PC MS6516L-10 TNC2 MS65 ms6516l

    varactor 36z

    Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
    Text: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r


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    PDF Z1000 MZ4614 MZ4627 1N4099 M4L3052 M4L3056 1N5158 varactor 36z germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    Untitled

    Abstract: No abstract text available
    Text: GM71V65163A S65163AL LG Semicon Co.,Ltd. ’ 4,196,304 W ORDS x 16 BIT CM OS DYNAM IC RAM Description Pin Configuration The GM 71V S 65163A/AL is the new generation dynam ic RAM organized 4,196,304 words by 16 bits. The G M 71V(S)65163A/AL utilizes advanced


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    PDF GM71V65163A GM71VS65163AL 5163A/AL 128ms

    1kx1 static ram

    Abstract: 80c85 S6504 A10 dual operational cmos ttl level shifter S6532 S3374 s7616
    Text: HARRIS SEflICOND SECTOR i-/lyu/il t i j IfaE D • 43 05271 OOlSlTfl b ■ HS-65641/44/45RH HS-65646/48RH HARRIS PREVIEW Radiation Hardened Asynchronous 64K SOI CM O S Static RAM Family May 1988 Features • 1.2 Micron Radiation Hardened SOI CM O S 1 X106RAD Si


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    PDF HS-65641/44/45RH HS-65646/48RH X106RAD S-82C 59ARH S-65142RH S-3560RH S-3569RH S-76161RH 1kx1 static ram 80c85 S6504 A10 dual operational cmos ttl level shifter S6532 S3374 s7616