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    MELTRIC Corporation 792P0DS3T316

    HANDLE w/CORD GRIP METAL BLUE SIZE 2 1" NPT .870-1.000 in | Meltric 792P0DS3T316
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 792P0DS3T316 Bulk 3 Weeks 1
    • 1 $130.65
    • 10 $126.07
    • 100 $126.07
    • 1000 $126.07
    • 10000 $126.07
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    DOMINANT Opto Technologies SKRTB-FHG-U3V3+W3X3+S3T3-1

    DIO LED RGB SKRTB-FHG SMD 22 21 08
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Karl Kruse GmbH & Co KG SKRTB-FHG-U3V3+W3X3+S3T3-1 46,000
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    S3T31 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BYP21

    Abstract: BYP21-50
    Text: N AMER PHIL I P S / D I S C R E T E SSE D • bfc,S3T31 00223fc.S 7 ■ BYH21 SERIES A T -Q 3 -J 7 ULTRA FAST-RECOVERY RECTIFIER DIODES FEATURING LOW REVERSE LEAKAGE Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring low reverse


    OCR Scan     		PDF byp21-50 BYP21 00SS37M T-03-T7 M2488 M1459

    BUZ71 dc to ac

    Abstract: transistor buZ71 BUZ71 T0220AB buz71 philips IR 5331
    Text: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor • t.t,S3T31 0014405 5 BUZ71 ^ May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , m otor control, welding,


    OCR Scan     		PDF S3T31 BUZ71 T0220AB; BUZ71_ T-39-11 VDs-10V BUZ71 dc to ac transistor buZ71 BUZ71 T0220AB buz71 philips IR 5331

    MB8114

    Abstract: BF246 BF246A BF247A
    Text: bt,S3T31 n053S0? 552 • APX BF246A to C BF247A to C IM AMER PHILIP S/ DISCR ET E b?E D N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical n-channel planar epitaxial junction field-effect transistors in plastic TO-92 variants, intended fo r VHF and UHF amplifiers, mixers and general purpose switching.


    OCR Scan     		PDF S3T31 BF246A BF247A MB8114 BF246

    OP222

    Abstract: FO-91 TRANSISTOR package FO-91 d 1047 transistor PTB23001X PTB23005X PTB32001X PTB32003X FO-41-B PTB42001X
    Text: H AMER PHILIPS/DISCRETE BSE D • bfc,S3T31 D01b533 4 ■ f - 33-£7/ Power Devices MICROWAVE TRANSISTORS CW POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE t Gp PL GHZ VC E (V> <w> (dB) " ; nc (%> CLASS C, MEDIUM POWER PTB23001X PTB23Û03X PTB23005X FO-41B FO-41B


    OCR Scan     		PDF PTB23001X FO-41B PTB23Ã PTB23005X PTB32001X PTB32003X OP222 FO-91 TRANSISTOR package FO-91 d 1047 transistor FO-41-B PTB42001X

    Untitled

    Abstract: No abstract text available
    Text: N AMER P H X L X P S / D X S C R E T E 'IVAV.vlu^O*M % S7D D bt,S3T31 ' 1 QDD7Q7fl fc, C E R A M IC STRI INLINE RF TR A N SISTO R S r. . M ILITARY ' INSTRUMENTATION CO M M UNICATIO NS <-s s -;s -'-'s -:-:-;s -r-r-:-:x s ^ ;v X S S v S •»:■vx-xwivj:"*:


    OCR Scan     		PDF S3T31 PAC-100

    PBYR12045TV

    Abstract: PBYR12035TV PBYR12040TV d794 M3356 PBYR12045T m3351 T0327 m3353 Philips rectifier F 793
    Text: DEVELOPMENT DATA ° bt>S3T31 0 0 2 2 ^ 3 3 2SE D T h is d a ta sheet c o n ta in s advance in fo r m a tio n and PBYR12035TV PBYR12040TV PBYR12045TV s p e c ific a tio n s are su b je c t t o change w it h o u t n o tic e . N AMER PHILIPS/DISCRETE 7-03-2]


    OCR Scan     		PDF 0022Cn3 PBYR12035TV PBYR12040TV PBYR12045TV PBYR12035 M3353 M1246 PBYR12045TV PBYR12035TV PBYR12040TV d794 M3356 PBYR12045T m3351 T0327 m3353 Philips rectifier F 793

    BSP15

    Abstract: BSP19
    Text: N AMER PHILIPS/DISCRETE ESE D • bfc>S3T31 QQlh24B S ■ 64 Surface Mount Devices HIGH VOLTAGE TRANSISTORS cont. TYPE ’ - ’ • ■ -• . - RATINGS PACKAGE VcBO VCEQ V ¥ NPN (cont.) BF622 BF722 BF822 BSP20 BST40 SOT-89 SOT-223 SOT-23 SOT-223 SOT-89


    OCR Scan     		PDF S3T31 Q01b24S bf622 sot-89 bf722 sot-223 bf822 sot-23 bsp20 BSP15 BSP19

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b^E D • bbS3R31 0Q2flfl2M ^30 I IAPX bLUcJO/12 A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 M H z communications band. Features: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile


    OCR Scan     		PDF bbS3R31 bLUcJO/12 BLU30/12

    BFR84

    Abstract: transistor bfr84
    Text: BFR84 _/ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a metal TO-72 envelope w ith source and substrate connected to the case, intended fo r a wide range o f v.h.f. applications, such as v.h.f. television tuners, f.m. tuners,


    OCR Scan     		PDF BFR84 titiS3T31 0035T11 BFR84 transistor bfr84

    Marking G1s

    Abstract: No abstract text available
    Text: I bbS3131 [][]P3bP3 bat. • APX BF992R N AUER PHILIPS/DISCRETE L7E D yv SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143R microminiature envelope w ith source and substrate interconnected. This MOS-FET tetrode is intended fo r use in VHF applications, such as VHF


    OCR Scan     		PDF bbS3131 BF992R OT143R Marking G1s

    Untitled

    Abstract: No abstract text available
    Text: SSE D N AMER P H I L I P S / D I S C R E T E [^53=131 QD2554S 1 • BVV31 SERIES TQ3-/S ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO—4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery characteristic.


    OCR Scan     		PDF QD2554S BVV31 E3YV31 T-03-I9 LbS3T31 BYV31 00225S2 T-03-19

    Untitled

    Abstract: No abstract text available
    Text: Philips Components D a ta s h e e t sta tu s Product specification d ate of Issue October 1990 BSP106 N-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES . Very low RDS on • Direct interface to CMOS, TTL, etc. • High-speed switching


    OCR Scan     		PDF BSP106 OT223 OT223 bbS3T31 DQ3b042 BSP106. OT223. hhS3T31

    transistor bt 808

    Abstract: transistor 1548 b
    Text: b b S a ^ l 00250bb 3b0 H A P X Philips Semiconductors N AMER PHILIPS/DISCRETE NPN 8 GHz wideband transistor FEATURES Product specification b?E T> BFQ67 PINNING • High power gain PIN • Low noise figure 1 base DESCRIPTION • High transition frequency 2


    OCR Scan     		PDF 00250bb BFQ67 transistor bt 808 transistor 1548 b

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/D ISCR ETE • E5E D bbS^Bl 0QEE3DS □ ■ BY229F SERIES T -0 3 -1 7 FAST SOFT-RECOVERY ELECTRICALLY ISOLATED RECTIFIER DIODES Glass-passivated, double-diffused rectifier diodes in full-pack plastic envelopes, featuring fast reverse recovery times and non-snap-off characteristics. Their electrical isolation makes them ideal for


    OCR Scan     		PDF BY229F BY229Fâ LLS3T31 bt53131 QD2531S 002531b T-03-17

    BD239

    Abstract: tp 9054 B0239A b0239c BD239A BD239B BD239C BD240 BD240C IBD239B
    Text: V N AMER PHILIPS/DISCRETE _ 2SE D 1I • . * ^53=131 001^303 5 ■ ^ ! BD239; BD239A J I B D 2 3 9 B ; BD239C T - 3 £ ~ £ > ? SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in audio output stages, general amplifier


    OCR Scan     		PDF BD239; BD239A IBD239B; BD239C T-3S-07 BD240; BD240C. BD239 BD239A BD239 tp 9054 B0239A b0239c BD239B BD239C BD240 BD240C IBD239B

    DD 127 D TRANSISTOR

    Abstract: BUK443-50B BUK443 BUK443-50A TRANSISTOR K 135 J 50
    Text: N AMER PHIL IP S/D ISCRETE 2SE D ^53^31 G0E0345 2 PowerMOS transistor BUK443-50A BUK443-50B T GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF G0E0345 BUK443-50A BUK443-50B BUK443 ID/100 DD 127 D TRANSISTOR BUK443-50B TRANSISTOR K 135 J 50

    TRANSISTOR A3

    Abstract: transistor c 3274 BLW60 transistor c 1974 transistor wz blw60 philips carbon film resistor capacitor polyester philips trimmer 3-30 pf TRIMMER capacitor 5-60 pF trimmer PT 10
    Text: -— . L I_ N AMER PHILIPS/DISCRETE ObE D 86D 0 1 4 7 0 D bbS3=î31 00137Ga T • T~ 3 /f BLW60 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial


    OCR Scan     		PDF bbS3T31 BLW60 TRANSISTOR A3 transistor c 3274 BLW60 transistor c 1974 transistor wz blw60 philips carbon film resistor capacitor polyester philips trimmer 3-30 pf TRIMMER capacitor 5-60 pF trimmer PT 10

    laser diode philips

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE fl7D D bb53T31 □□DT745 7 • r DEVELOPMENT DATA T h li data iheat contain! advance Information and •pacifications era subject to chanoa without notice, T-41-07 516CQF-B DOUBLE HETEROSTRUCTURE AIGaAs DIODE LASER WITH FIBRE PIGTAIL


    OCR Scan     		PDF bb53T31 DT745 T-41-07 516CQF-B 516CQF-B laser diode philips

    Untitled

    Abstract: No abstract text available
    Text: U _ _ — - — - N AUER PHILIPS/DISCRETE OL.E D FowerMOS transistor • bbSBTBl DDlMMSfi 7 ■ " BUZ73 -pT 3 7 _ j May 1987


    OCR Scan     		PDF BUZ73 bbS3T31 0144b3 BUZ73 T-39-11 S3T31

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE SSE D ^53=131 0D2SH73 T • I BY 128 SERIES _ V T -Q 3 -/7 ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times and soft-recovery characteristic. They are intended for


    OCR Scan     		PDF 0D2SH73 Fig-13

    Untitled

    Abstract: No abstract text available
    Text: 11 1^53=131 001=5713 0 • 25E D N AMER PHILIPS/DISCRETE BDT41;A BDT41B;C J T -3 3 -II SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in general purpose amplifier and switching applications. The TIP41 series is an equivalent type. P-N-P complements are BDT42 series.


    OCR Scan     		PDF BDT41 BDT41B TIP41 BDT42 BDT41 BDT41A hbS3T31

    SOT-90B

    Abstract: optocouplers 4n35 OPTOCOUPLER dc 4N35 4n35 optocoupler 4N36 SOT90B isolator IC 4N35 optocoupler 4N37
    Text: 4N35 4N36 4N37 T O OPTOCOUPLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and a npn silicon photo­ transistor. They are suitable fo r use w ith TTL integrated circuits. Features • Fast switching speeds • Low saturation voltage


    OCR Scan     		PDF E90700 0110b 57804/VDE 7Z94427A S3T31 003Sb3b SOT-90B optocouplers 4n35 OPTOCOUPLER dc 4N35 4n35 optocoupler 4N36 SOT90B isolator IC 4N35 optocoupler 4N37

    BYD34D

    Abstract: BYD34J BYD34G BYD34K BYD34M
    Text: N AMER PHILIPS/DISCRETE h'lE D • Philips Semiconductors_ bh53^31 □0SbS7c1 410 ■ APX Maintenance type ~ not for new designs Avalanche fast soft-recovery rectifier diodes DESCRIPTION Glass passivated rectifier diodes in hermetically sealed axial-leaded ID


    OCR Scan     		PDF BYD34 ttS3T31 00Eb5Ã BYD34D BYD34J BYD34G BYD34K BYD34M

    CNX48

    Abstract: transistor 115 25e diode h5e CNX48U SOT-90B 4t85 CNX48 U
    Text: I 1 N AUER PHILIPS/DISCRETE SSE D • S3T31 GOSOTÖB 1 ■ CNX48 OPTOCOUPLER Opto-isalator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in line DI L envelope. Features


    OCR Scan     		PDF bbS3T31 CNX48 CNX48U. 7Z88208 CNX48 transistor 115 25e diode h5e CNX48U SOT-90B 4t85 CNX48 U