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    S11108 Price and Stock

    JRH Electronics ZSS-111-08-L-D-1180

    CONN HEADER VERT 22POS 2.54MM
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    DigiKey ZSS-111-08-L-D-1180 Bulk 69 1
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    JRH Electronics ZSS-111-08-T-D-1117

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    Samtec Inc ZSS-111-08-L-D-1180

    CONN HEADER VERT 22POS 2.54MM
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    Powell Electronics ZSS-111-08-L-D-1180 69 1
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    Samtec Inc ZSS-111-08-T-D-1117

    CONN HDR .100" 22POS
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    Newark ZSS-111-08-T-D-1117 Bulk 104 1
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    Samtec Inc ZSS-111-08-L-D-1157

    Conn Elevated Shrouded Header HDR 22 POS 2.54mm Solder ST Thru-Hole - Bulk (Alt: ZSS-111-08-L-D-115)
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    S11108 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S11108

    Abstract: high frequency linear cmos IMAGE SENSOR KMPDC0312EC high frequency line scan 2048 pixels array
    Text: CMOS linear image sensor S11108 Achieves high sensitivity by adding an amplifier to each pixel The S11108 is a CMOS linear image sensor that achieves high sensitivity by adding an amplifier to each pixel. It has a long photosensitive area effective photosensitive area length: 28.672 mm consisting of 2048 pixels, each with a pixel size of 14


    Original     		PDF S11108 S11108 SE-171 KMPD1112E06 high frequency linear cmos IMAGE SENSOR KMPDC0312EC high frequency line scan 2048 pixels array

    S11108

    Abstract: high frequency line scan 2048 pixels array KMPDC0366EB 74HC541 high frequency linear cmos IMAGE SENSOR high frequency line scan 2048 pixels sensor KMPDC0387EA KMPDC0312EC
    Text: CMOS linear image sensor S11108 Achieves high sensitivity by adding an amplifier to each pixel The S11108 is a CMOS linear image sensor that achieves high sensitivity by adding an amplifier to each pixel. It has a long active area effective active area length: 28.672 mm consisting of 2048 pixels, each with a pixel size of 14 x 14 m.


    Original     		PDF S11108 S11108 SE-171 KMPD1112E05 high frequency line scan 2048 pixels array KMPDC0366EB 74HC541 high frequency linear cmos IMAGE SENSOR high frequency line scan 2048 pixels sensor KMPDC0387EA KMPDC0312EC

    S11108

    Abstract: KMPDC0366EB 74HC541
    Text: CMOSリニアイメージセンサ S11108 画素ごとにアンプを内蔵することで高感度を実現 S11108は画素ごとにアンプを内蔵することで高感度を実現したCMOSリニアイメージセンサです。画素サイズ 14 x 14


    Original     		PDF S11108 S11108CMOS m2048 V1536 74HC541 LT1818 S11108 KMPDC0366EB 74HC541

    CH 89 A15A

    Abstract: No abstract text available
    Text: CMOSリニアイメージセンサ S11108 画素ごとにアンプを内蔵することで高感度を実現 S11108は画素ごとにアンプを内蔵することで高感度を実現したCMOSリニアイメージセンサです。画素サイズ 14 x 14


    Original     		PDF S11108 S11108ã KMPD1112J11 CH 89 A15A

    S11108

    Abstract: image 360 KMPDC0312EC KMPDC0319ED 1116S
    Text: CMOS linear image sensor S11108 Achieves high sensitivity by adding an amplifier to each pixel The S11108 is a CMOS linear image sensor that achieves high sensitivity by adding an amplifier to each pixel. It has a long photosensitive area effective photosensitive area length: 28.672 mm consisting of 2048 pixels, each with a pixel size of 14


    Original     		PDF S11108 S11108 SE-171 KMPD1112E07 image 360 KMPDC0312EC KMPDC0319ED 1116S

    Untitled

    Abstract: No abstract text available
    Text: CMOS linear image sensor S11108 Achieves high sensitivity by adding an amplifier to each pixel The S11108 is a CMOS linear image sensor that achieves high sensitivity by adding an amplifier to each pixel. It has a long photosensitive area effective photosensitive area length: 28.672 mm consisting of 2048 pixels, each with a pixel size of 14


    Original     		PDF S11108 S11108 KMPD1112E09

    Image sensors

    Abstract: ccd sensors
    Text: Image sensors 1 CCD image sensors 1-1 1-2 1-3 1-4 Structure and operating principle Characteristics How to use New approaches CHAPTER 05 6 Photodiode arrays with amplifiers 6-1 6-2 6-3 6-4 6-5 Features Structure Operating principle Characteristics How to use


    Original     		PDF 14-Bit Image sensors ccd sensors

    C10500

    Abstract: No abstract text available
    Text: セレクションガイド 2013.11 イメージセンサ 幅 広 い 波 長 範 囲 に 対 応した 計 測 用 イメ ー ジ セ ン サ IMAGE SENSOR イメージセンサ 幅広い波長範囲に対応した 計測用イメージセンサ 浜 松ホトニクスは赤 外から可 視・紫 外・真 空 紫 外・


    Original     		PDF

    S11830-3344MF

    Abstract: No abstract text available
    Text: NEWS 01 2011 Solid state PRODUCTS PAGE 11 Thumb-sized “ultra-compact spectrometer” with VIS-NIR response SOLID STATE PRODUCTS PAGE 16 New developments for the MPPC ELECTRON TUBE PRODUCTS PAGE 21 H2D2 light sources L11788 series, L11789 series SYSTEMS PRODUCTS


    Original     		PDF L11788 L11789 C11367 DE128228814 S11830-3344MF

    S11074

    Abstract: S11031 S11007 S11048 S11030 M83446 S11100 m83446/11 S11092 S11065
    Text: S11000 Series Fixed Chip Inductors for Space Applications FEATURES Military QPL Approved. Pick-and-place compatible. SPECIFICATIONS Met the requirements of MIL-PRF83446 and MIL-STD-981, class S or class B. Class S parts are intended for critical flight and mission-essential ground


    Original     		PDF S11000 MIL-PRF83446 MIL-STD-981, MIL-STD-202, S11074 S11031 S11007 S11048 S11030 M83446 S11100 m83446/11 S11092 S11065

    SQR50N06-07L

    Abstract: No abstract text available
    Text: SQR50N06-07L Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested


    Original     		PDF SQR50N06-07L O-252 AEC-Q101 2002/95/EC SQR50N06-07L-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. SQR50N06-07L

    S11108

    Abstract: C11208-01 C8841 H10570 Hamamatsu Photonics S11108 External Quantum Efficiency solar
    Text: NEWS 02 2009 LASER PRODUCTS PAGE 08 Gas detection: New Quantum Cascade Infrared Lasers SOLID STATE PRODUCTS PAGE 18 Infrared LED L10822, L10822-01, L10823, L10823-01 ELECTRON TUBE PRODUCTS PAGE 37 Flat panel PMT assemblies H10966A-100/H10966B-100 SYSTEMS PRODUCTS


    Original     		PDF L10822, L10822-01, L10823, L10823-01 H10966A-100/H10966B-100 C11079-01 S11108 C11208-01 C8841 H10570 Hamamatsu Photonics S11108 External Quantum Efficiency solar

    Untitled

    Abstract: No abstract text available
    Text: SQR50N06-07L Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested


    Original     		PDF SQR50N06-07L O-252 AEC-Q101 2002/95/EC O-252 SQR50N06-07L-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: SQR50N06-07L Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested


    Original     		PDF SQR50N06-07L O-252 AEC-Q101 2002/95/EC O-252 SQR50N06-07L-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SQR50N06-07L Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested


    Original     		PDF SQR50N06-07L O-252 AEC-Q101 2002/95/EC SQR50N06-07L-GE3 11-Mar-11

    lcd 2004A

    Abstract: No abstract text available
    Text: 浜松ホトニクスの HOT な情報マガジン［ハマホット］ 2009 夏 vol.4 発行元 〒430-8587 静岡県浜松市中区砂山町325-6 日本生命浜松駅前ビル TEL：053-452-2141 FAX：053-456-7889 http://jp.hamamatsu.com/ キリトリ線


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 発行元 〒430-8587 静岡県浜松市中区砂山町325-6 日本生命浜松駅前ビル TEL：053-452-2141 FAX：053-456-7889 jp.hamamatsu.com キリトリ線 国内営業体制変更のご案内 POST CARD 料金受取人払郵便 浜北支店承認


    Original     		PDF

    C10500

    Abstract: linear CCD 512 TDI cmos image sensor
    Text: Selection guide - Sep. 2014 Image Sensors Various types of image sensors covering a wide spectral response range for photometry HAMAMATSU PHOTONICS K.K. Image sensors Various types of image sensors covering a wide spectral response range for photometry H A M A M AT S U d e v e l o p s a n d p r o d u c e s a d vanced image sensors for measurement applications in spectral and energy ranges including infrared, visible, ultraviolet, vacuum ultraviolet, soft X-rays and hard X-rays. We provide


    Original     		PDF KAPD0002E12 C10500 linear CCD 512 TDI cmos image sensor

    Untitled

    Abstract: No abstract text available
    Text: イメージセンサ 1 CCDイメージセンサ 1-1 1-2 1-3 1-4 構造動作原理 特性 使い方 新たな取り組み 2 NMOSリニアイメージセンサ 6-1 6-2 6-3 6-4 6-5 特長 構造 動作原理 特性 使い方 7 InGaAsリニアイメージセンサ


    Original     		PDF IS1-17,

    Untitled

    Abstract: No abstract text available
    Text: SQR40N10-25 Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 100 RDS(on) () at VGS = 10 V 0.025 RDS(on) () at VGS = 4.5 V 0.029 ID (A) • TrenchFET Power MOSFET


    Original     		PDF SQR40N10-25 O-252 AEC-Q101 2002/95/EC SQR40N10-25-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.