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    Untitled

    Abstract: No abstract text available
    Text: CMOSリニアイメージセンサ S11639 高感度縦長画素の受光部を採用 縦長画素 14 x 200 m の受光部を採用した高感度CMOSリニアイメージセンサです。紫外域においても、高感度・高耐性 を実現しています。5 V単一電源で動作するため、安価な分光器に適しています。


    Original     		PDF S11639 KMPD1136J05

    Untitled

    Abstract: No abstract text available
    Text: CMOS linear image sensor S11639 High sensitivity, photosensitive area with vertically long pixels The S11639 is a high sensitivity CMOS linear image sensor using a photosensitive area with vertically long pixels 14 x 200 m . Other features include high sensitivity and high resistance in the UV region. The S11639 operates from a single 5 V


    Original     		PDF S11639 S11639 KMPD1136E04

    S11108

    Abstract: high frequency linear cmos IMAGE SENSOR KMPDC0312EC high frequency line scan 2048 pixels array
    Text: CMOS linear image sensor S11108 Achieves high sensitivity by adding an amplifier to each pixel The S11108 is a CMOS linear image sensor that achieves high sensitivity by adding an amplifier to each pixel. It has a long photosensitive area effective photosensitive area length: 28.672 mm consisting of 2048 pixels, each with a pixel size of 14


    Original     		PDF S11108 S11108 SE-171 KMPD1112E06 high frequency linear cmos IMAGE SENSOR KMPDC0312EC high frequency line scan 2048 pixels array

    S11108

    Abstract: high frequency line scan 2048 pixels array KMPDC0366EB 74HC541 high frequency linear cmos IMAGE SENSOR high frequency line scan 2048 pixels sensor KMPDC0387EA KMPDC0312EC
    Text: CMOS linear image sensor S11108 Achieves high sensitivity by adding an amplifier to each pixel The S11108 is a CMOS linear image sensor that achieves high sensitivity by adding an amplifier to each pixel. It has a long active area effective active area length: 28.672 mm consisting of 2048 pixels, each with a pixel size of 14 x 14 m.


    Original     		PDF S11108 S11108 SE-171 KMPD1112E05 high frequency line scan 2048 pixels array KMPDC0366EB 74HC541 high frequency linear cmos IMAGE SENSOR high frequency line scan 2048 pixels sensor KMPDC0387EA KMPDC0312EC

    S11108

    Abstract: KMPDC0366EB 74HC541
    Text: CMOSリニアイメージセンサ S11108 画素ごとにアンプを内蔵することで高感度を実現 S11108は画素ごとにアンプを内蔵することで高感度を実現したCMOSリニアイメージセンサです。画素サイズ 14 x 14


    Original     		PDF S11108 S11108CMOS m2048 V1536 74HC541 LT1818 S11108 KMPDC0366EB 74HC541

    Untitled

    Abstract: No abstract text available
    Text: CMOS linear image sensor S11638 Achieves high sensitivity by adding an amplifier to each pixel The S11638 is a CMOS linear image sensor that achieves high sensitivity by adding an amplifier to each pixel. It has a long photosensitive area effective photosensitive area length: 28.672 mm consisting of 2048 pixels, each with a pixel size of 14


    Original     		PDF S11638 S11638 KMPD1130E04

    Untitled

    Abstract: No abstract text available
    Text: CMOS linear image sensor S11639 High sensitivity, photosensitive area with vertically long pixels The S11639 is a high sensitivity CMOS linear image sensor using a photosensitive area with vertically long pixels 14 x 200 m . Other features include high sensitivity and high resistance in the UV region. The S11639 operates from a single 5 V


    Original     		PDF S11639 S11639 KMPD1136E03

    CH 89 A15A

    Abstract: No abstract text available
    Text: CMOSリニアイメージセンサ S11108 画素ごとにアンプを内蔵することで高感度を実現 S11108は画素ごとにアンプを内蔵することで高感度を実現したCMOSリニアイメージセンサです。画素サイズ 14 x 14


    Original     		PDF S11108 S11108ã KMPD1112J11 CH 89 A15A

    Untitled

    Abstract: No abstract text available
    Text: CMOSリニアイメージセンサ S11638 画素ごとにアンプを内蔵することで高感度を実現 S11638は画素ごとにアンプを内蔵することで高感度を実現したCMOSリニアイメージセンサです。画素サイズ 14 x 42


    Original     		PDF S11638 S11638ã KMPD1130J04

    S11108

    Abstract: image 360 KMPDC0312EC KMPDC0319ED 1116S
    Text: CMOS linear image sensor S11108 Achieves high sensitivity by adding an amplifier to each pixel The S11108 is a CMOS linear image sensor that achieves high sensitivity by adding an amplifier to each pixel. It has a long photosensitive area effective photosensitive area length: 28.672 mm consisting of 2048 pixels, each with a pixel size of 14


    Original     		PDF S11108 S11108 SE-171 KMPD1112E07 image 360 KMPDC0312EC KMPDC0319ED 1116S

    Untitled

    Abstract: No abstract text available
    Text: CMOS linear image sensor S11108 Achieves high sensitivity by adding an amplifier to each pixel The S11108 is a CMOS linear image sensor that achieves high sensitivity by adding an amplifier to each pixel. It has a long photosensitive area effective photosensitive area length: 28.672 mm consisting of 2048 pixels, each with a pixel size of 14


    Original     		PDF S11108 S11108 KMPD1112E09

    S11638

    Abstract: linear uv photodiode array
    Text: CMOS linear image sensor S11638 Achieves high sensitivity by adding an amplifier to each pixel The S11638 is a CMOS linear image sensor that achieves high sensitivity by adding an amplifier to each pixel. It has a long photosensitive area effective photosensitive area length: 28.672 mm consisting of 2048 pixels, each with a pixel size of 14


    Original     		PDF S11638 S11638 KMPD1130E02 linear uv photodiode array