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    RJK0654DPB Search Results

    RJK0654DPB Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    RJK0654DPB-00#J5 Renesas Electronics Corporation Nch Single Power Mosfet 60V 30A 8.3Mohm Lfpak Visit Renesas Electronics Corporation
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    RJK0654DPB Price and Stock

    Renesas Electronics Corporation RJK0654DPB-00-J5

    MOSFET N-CH 60V 30A LFPAK
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    DigiKey RJK0654DPB-00-J5 Cut Tape 4,298 1
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    RJK0654DPB-00-J5 Reel 2,500
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    Avnet Americas RJK0654DPB-00-J5 Reel 18 Weeks 2,500
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    Renesas Electronics Corporation RJK0654DPB-00#J5

    MOSFETs Power MOSFET
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    Mouser Electronics RJK0654DPB-00#J5
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    Flip Electronics RJK0654DPB-00#J5 105,000
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    Renesas Electronics America RJK0654DPB-00#J5 Tape & Reel (TR) 4,298 1
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    Renesas Electronics Corporation RJK0654DPB00J5

    POWER SWITCHING SILICON N CHANNEL MOS FET Power Field-Effect Transistor, 30A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA RJK0654DPB00J5 1,885
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    Renesas Electronics Corporation RJK0654DPB

    Trans MOSFET N-CH 60V 30A 5-Pin LFPAK T/R (Alt: RJK0654DPB-00#J5)
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    Avnet Silica RJK0654DPB 20 Weeks 2,500
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    RJK0654DPB Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RJK0654DPB-00#J5 Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V LFPAK Original PDF

    RJK0654DPB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RJK0654DPB

    Abstract: No abstract text available
    Text: Preliminary RJK0654DPB Silicon N Channel Power MOS FET Power Switching REJ03G1880-0100 Rev.1.00 Nov 16, 2009 Features • • • • • Pb-free • Halogen-free • High density mounting High speed switching Low drive current Low on-resistance RDS on = 6.5 mΩ typ. (at VGS = 10 V)


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    PDF RJK0654DPB REJ03G1880-0100 PTZZ0005DA-A RJK0654DPB

    RJK0654DPB

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0654DPB 60V, 30A, 8.3m nax. Silicon N Channel Power MOS FET Power Switching R07DS1052EJ0200 Previous: REJ03G1880-0100 Rev.2.00 Apr 09, 2013 Features • High speed switching  Low drive current  Low on-resistance RDS(on) = 6.5 m typ. (at VGS = 10 V)


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    PDF RJK0654DPB R07DS1052EJ0200 REJ03G1880-0100) PTZZ0005DA-A RJK0654DPB

    RJK0654DPB

    Abstract: No abstract text available
    Text: Preliminary RJK0654DPB Silicon N Channel Power MOS FET Power Switching REJ03G1880-0100 Rev.1.00 Nov 16, 2009 Features • • • • • Pb-free • Halogen-free • High density mounting High speed switching Low drive current Low on-resistance RDS on = 6.5 mΩ typ. (at VGS = 10 V)


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    PDF RJK0654DPB REJ03G1880-0100 PTZZ0005DA-A RJK0654DPB

    RJK0654DPB

    Abstract: RJK0654
    Text: Preliminary RJK0654DPB Silicon N Channel Power MOS FET Power Switching REJ03G1880-0100 Rev.1.00 Nov 16, 2009 Features • • • • • Pb-free • Halogen-free • High density mounting High speed switching Low drive current Low on-resistance RDS on = 6.5 mΩ typ. (at VGS = 10 V)


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    PDF RJK0654DPB REJ03G1880-0100 PTZZ0005DA-A RJK0654DPB RJK0654

    RJH60F7

    Abstract: rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652
    Text: Solutions for Enhanced Power Management Power MOSFETs, TRIACs, Thyristors, and IGBTs System designs that save energy have valuable marketing advantages. Yet new products typically must deliver increasingly complex functionality and higher levels of performance — a combination that tends to


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    PDF RJP6085DPN O-220AB RJP6085DPK RJH6085BDPK RJH6086BDPK RJH6087BDPK RJH6088BDPK RJH60F7 rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


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    PDF R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


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    PDF R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram

    RJK03P7DPA

    Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
    Text: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position


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    PDF 0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1

    RX62T

    Abstract: inverter control techniques 32-Bit Microcomputers RJK0654DPB washing machine DC motor solar inverters circuit diagram SH7149 home use Inverter application note capacitor power factor correction home use "32-Bit Microcomputers"
    Text: Application: Motor Control Solution RX62T MCUs and Power Devices Combine to Deliver Superior Environmental Performance in Inverter Control Applications The growing awareness of environmental problems such as the need to halt global warming has focused attention not only on reducing power consumption energy efficiency , but also on enhancing solar power and


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    PDF RX62T 32-bit R70PF0009EJ0101 inverter control techniques 32-Bit Microcomputers RJK0654DPB washing machine DC motor solar inverters circuit diagram SH7149 home use Inverter application note capacitor power factor correction home use "32-Bit Microcomputers"

    rjh60f5

    Abstract: RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK
    Text: Rev.27.01 2010.2.2 Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation www.renesas.com Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation January 2010 Standard Product Business Group 2/2/2010 Rev.27.01 2010. Renesas Technology Corp., All rights reserved.


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    PDF REJ13G0003-2701 rjh60f5 RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK

    RJK0654DPB

    Abstract: No abstract text available
    Text: RL78G14 Motor Control Kit YRMCKITRL78G14 User Manual Introduction This document describes the Motor Control Kit YRMCKITRL78G14 based on RL78/G14. D011181 Rev.1.00 th June 15 2012 D011181 Rev.1.00 th June 15 2012 This platform drives a 3-phase Permanent Magnet Synchronous Motor (Brushless Motor) by using an advanced sensorless Field Oriented Control algorithm.


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    PDF RL78G14 YRMCKITRL78G14 YRMCKITRL78G14) RL78/G14. D011181 RJK0654DPB

    HAT1125H

    Abstract: ff 0401 HAT2270H LFPAK footprint Renesas rjk305 uPA2749UT1A RJK03C1DPB RJK305DPB UPA2802T1L UPA2807T1L
    Text: High performance PowerMOSFET for low voltage industrial and consumer applications www.renesas.eu 2010.09 To meet future design demands for high performance cost and space reductions the high performance PowerMOSFET provide design engineers with a head start. A wide voltage range VDSS = 12V.250V of high efficient


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    PDF uPA27xxUT1A R07PF0002ED0100 HAT1125H ff 0401 HAT2270H LFPAK footprint Renesas rjk305 uPA2749UT1A RJK03C1DPB RJK305DPB UPA2802T1L UPA2807T1L

    RJK0654DPB

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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