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    RFL1N12 Price and Stock

    Rochester Electronics LLC RFL1N12

    N-CHANNEL POWER MOSFET
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    DigiKey RFL1N12 Bulk 845 342
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    Renesas Electronics Corporation RFL1N12

    - Bulk (Alt: RFL1N12)
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    Avnet Americas RFL1N12 Bulk 4 Weeks 411
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    Harris Semiconductor RFL1N12

    MOSFET Transistor, N-Channel, TO-39
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    Quest Components RFL1N12 30
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    Rochester Electronics RFL1N12 845 1
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    RFL1N12 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RFL1N12 Intersil 1A, 120V and 150V, 1.9 ?, N-Channel Power MOSFETs Original PDF
    RFL1N12 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 120V, Scan PDF
    RFL1N12 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFL1N12 International Rectifier RF and BUZ Series Power MOSFETs - N-Channel Scan PDF
    RFL1N12 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    RFL1N12 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFL1N12L Intersil 1A, 120V and 150V, 1.900 ?, Logic Level, N-Channel Power MOSFETs Original PDF
    RFL1N12L General Electric N-channel logic level power field-effect transistor (LL FET). 120V, 1A. Scan PDF
    RFL1N12L Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFL1N12L Unknown Shortform Datasheet & Cross References Data Short Form PDF

    RFL1N12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN7254

    Abstract: AN7260 RFL1N12L RFL1N15L
    Text: [ /Title RFL1N 12L, RFL1N1 5L /Subject (1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, Logic Level, N-Channel Power MOSFETs, TO205AF) RFL1N12L, RFL1N15L Semiconductor 1A, 120V and 150V, 1.900 Ohm,


    Original     		PDF O205AF) RFL1N12L, RFL1N15L RFL1N12L O-205AF AN7254 AN7260. AN7260 RFL1N12L RFL1N15L

    Untitled

    Abstract: No abstract text available
    Text: RFL1N12, RFL1N15 S E M I C O N D U C T O R 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1A, 120V and 150V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    Original     		PDF RFL1N12, RFL1N15 TA09196. TB334 095mA 75VDSS 50VDSS 25VDSS AN7254 AN7260.

    RFL1N15

    Abstract: AN7254 AN7260 RFL1N12 TB334
    Text: RFL1N12, RFL1N15 Semiconductor 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1A, 120V and 150V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    Original     		PDF RFL1N12, RFL1N15 TA09196. AN7254 AN7260. RFL1N15 AN7260 RFL1N12 TB334

    IRF150CF

    Abstract: GENTRON 2SK747A EUM159M 2SK798 EFM159M179 YTF152 YTFP150 2SK747
    Text: MOSFETs Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) Max (V) Clsa Max (F) tr Max (s) tf Max (s) Toper Max (OC) Package Style N-Channel Enhancement-Type, (Co nt' d) 5 10 BUZ349 BUZ349 SFN152 YTFP152


    Original     		PDF BUZ349 SFN152 YTFP152 YTF152 IRFP152 RFH35Nl0 RFK35Nl0 PB125N60HM PB125N60HP IRF150CF GENTRON 2SK747A EUM159M 2SK798 EFM159M179 YTFP150 2SK747

    Untitled

    Abstract: No abstract text available
    Text: W vys S RFL1N12L, RFL 1N15L S e m ico n d ucto r 7 1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs September 1998 Features Description • 1A, 120V and 150V RFL1N12L TO -205AF RFL1N12L These are N-Channel enhancem ent mode silicon gate power field effect transistors specifically designed for use


    OCR Scan     		PDF RFL1N12L, 1N15L RFL1N12L -205AF RFL1N15IN RFL1N15L AN7254 AN7260.

    Untitled

    Abstract: No abstract text available
    Text: y *“ * RFL1N12, RFL1N15 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs January 1998 Description Features 1A, 120V and 150V Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    OCR Scan     		PDF RFL1N12, RFL1N15 TA09196. AN7254 AN7260.

    5Q07

    Abstract: RFP mosfets RFL1N12 RFL1N15 RFP2N12 RFP2N15 rfp1n12 ta9196 TA921
    Text: Standard Power MOSFETs RFL1N12, RFL1N15, RFP2N12, RFP2N15 File N um ber 1444 N-Channel Enhancement-Mode Power Field-Effect Transistors 1 and 2 Amperes 120 V — 150 V ro s o n : 1.75fi and 1.90 Features: • SOA is power-dissipation lim ited m Nanosecond sw itching speeds


    OCR Scan     		PDF RFL1N12, RFL1N15, RFP2N12, RFP2N15 RFL1N12 RFL1N15 RFP2N12 RFP2N15* AN-7254 AN-7260. 5Q07 RFP mosfets RFP2N15 rfp1n12 ta9196 TA921

    2N15

    Abstract: RFL1N12 RFL1N15 RFP2N12 RFP2N15 RFP-zn rfp1n12
    Text: G E SOLID STATE ' DE I3Û7SGA1 GDlfllOl M T □! 0! § SOLID STATE Standard Power MOSFETs " 01E .18101 d T ' 3 ? “0 9 RFL1N12, RFL1N15, RFP2N12, RFP2N15 File Number 1444 N-Channel Enhancement-Mode


    OCR Scan     		PDF d7z39 RFL1N12, RFL1N15, RFP2N12, RFP2N15 RFL1N12 RFL1N15 RFL1N15 RFP2N12 2N15 RFP2N15 RFP-zn rfp1n12

    fl911

    Abstract: No abstract text available
    Text: RFL1N12L RFL1N15L HARRIS August 1991 N-Channel Logic Level Power Field-Effect Transistors L2FET Package F e a tu re s TO-20SAF BOTTOM VIEW • 1 A, 1 2 0V and 150V • r DS(O N ) = 1 -9 ^ • Design O p tim ized for 5V G ate Drives GATE SOURCE • Can be Driven D irectly from Q M O S, N M O S, T T L Circuits


    OCR Scan     		PDF RFL1N12L RFL1N15L O-20SAF AN-7260. fl911

    Untitled

    Abstract: No abstract text available
    Text: RFL1N12, RFL1N15 HARRIS S E M I C O N D U C T O R 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1 A, 120V and 150V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    OCR Scan     		PDF RFL1N12, RFL1N15 TA09196. AN7254 AN7260. RFL1N15

    L52C

    Abstract: No abstract text available
    Text: RFL1N12 RFL1N15 2 H a rris N-Channel Enhancement-Mode Power Field-Effect Transistors August 1991 Features Package T O -2 0 5 A F • 1A, 120V and 150V • ros on) = 1.9fi GATE SOURCE • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


    OCR Scan     		PDF RFL1N12 RFL1N15 RFL1N15 T1N12 92CS-34 36I3B 92CS-3 L52C

    RFP2N15L

    Abstract: RFL1N12L RFL1N15L RFP2N12L TA9529 TA9528 rfp1n12
    Text: Logic-Level Power MOSFETs RFL1N12L, RFL1N15L, RFP2N12L, RFP2N15L File Number N-Channel Logic Level Power Field-Effect Transistors L2 FET o 1 and 2 A, 120 V and 150 V rDs(on): 1.750 and 1.90 Feature*: • Design optimized for 5 volt gate drive ■ Can be driven directly from Q-MOS, N-MOS, TTL Circuits


    OCR Scan     		PDF RFL1N12L, RFL1N15L, RFP2N12L, RFP2N15L 92CS-337 RFL1N12L RFL1N15L RFP2N12L TA9529 TA9528 rfp1n12

    RFP2N12L

    Abstract: RFL1N12L RFL1N15L RFP2N15L rfp1n12
    Text: 387SÓ81 G E S O L I D S T A T e 'd Ï » F | 3 ö 7 S D f l l DDlfl4Sfl 3 l ~ D Logic-Level Power MOSFETs RFL1N12L, RFL1N15L, RFP2N12L, RFP2N15L File Number 1513 N-Channe Logic Level Power Field-Effect Transistors L2 FET)


    OCR Scan     		PDF 0Dlfl42fl RFL1N12L, RFL1N15L, RFP2N12L, RFP2N15L CS-53741 RFL1N12L RFL1N15L RFP2N12L RFP2N15L rfp1n12

    buz11

    Abstract: BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N RFK45N05
    Text: THOnSON/ DISTRIBUTOR 5flE D • ^05^873 □□□57D3 5fl3 Wt TCSK P o w er M O S FE T s RF and B U Z -S e rie s P ow er M O S FE Ts — N -C h a n n e l Package Maximum Ratings BV q s S V id s (A) r DS(ON) OHMS 50 2 4 13 14 15 25 25 30 45 0.75 0.60 0.12


    OCR Scan     		PDF T0-204 O-205 O-218 O-220 RFM15N05 RFM25N05 RFK45N05 RFL2N05 RFH45N05 RFP4N05 buz11 BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


    OCR Scan     		PDF 2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r

    field-effect transistors

    Abstract: 05LSM RFP8N18L RFP25N06L transistors 2N6904 field-effect transistor RFP14N05L M 615 transistor transistor 684
    Text: _ POWER MOSFETs 6 L O G IC L E V E L P O W E R M O S F E T s PAGE 2N6901 N-Channel Logic Level Power MOS Field-Effect Transistor L2F E T . 6-3 2N6902 N-Channel Logic Level Power MOS Field-Effect Transistor (L2F E T ) .


    OCR Scan     		PDF 2N6901 2N6902 2N6903 2N6904 RFL1N08L, RFL1N10L RFL1N12L, RFL1N15L RFL1N18L, RFL1N20L field-effect transistors 05LSM RFP8N18L RFP25N06L transistors field-effect transistor RFP14N05L M 615 transistor transistor 684

    thyristor TAG 8506

    Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
    Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y


    OCR Scan     		PDF 11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719

    2N6901

    Abstract: 2N6903 THOMSON DISTRIBUTOR RFL1N10L RFL2N05L RFM15N05L 2n6902 RFD14N05LSM RFD16N05L RFP14N05L
    Text: _ THOMSON/ 5SE D DISTRIBUTOR • TDEtifi73 0G0S713 TCS< 4EB Power MOSFETs Logic Level - L2FETs — N-Channel Types N. Package Q Maximum Ratings BVpsS V >d s (A) 'DS(ON) O HMS e AS (mj) 50 2 4 15 14 16 25 50 0.75 0.60 0.14 0.100 0.047 0.047 0.22*


    OCR Scan     		PDF 0G0S713 O-204 O-205 O-220 O-251 O-252 O-247 RFL2N05L RFM15N05L RFP4N05L 2N6901 2N6903 THOMSON DISTRIBUTOR RFL1N10L 2n6902 RFD14N05LSM RFD16N05L RFP14N05L

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		PDF 1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40