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    RFL1N10 Search Results

    RFL1N10 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RFL1N10 Intersil 1A, 80V and 100V, 1.200 ?, N-Channel, Power MOSFETs Original PDF
    RFL1N10 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V, Scan PDF
    RFL1N10 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFL1N10 International Rectifier RF and BUZ Series Power MOSFETs - N-Channel Scan PDF
    RFL1N10 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    RFL1N10 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    RFL1N10 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFL1N10L Fairchild Semiconductor 1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET Original PDF
    RFL1N10L Intersil 1A, 100V, 1.200 ?, Logic Level, N-Channel Power MOSFET Original PDF
    RFL1N10L General Electric N-channel logic level power field-effect transistor (LL FET). 100V, 1A. Scan PDF
    RFL1N10L Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFL1N10L Unknown Shortform Datasheet & Cross References Data Short Form PDF

    RFL1N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RFL1N10L

    Abstract: AN7254 AN7260
    Text: RFL1N10L 1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET August 1999 Features Description • 1A, 100V This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level 5V driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special


    Original     		PDF RFL1N10L O-205AF RFL1N10L AN7254 AN7260

    RFL1N10

    Abstract: AN7254 AN7260 RFL1N08
    Text: [ /Title RFL1N 08, RFL1N1 0 /Subject (1A, 80V and 100V, 1.200 Ohm, NChannel, Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel, Power MOSFETs, TO204AA) /Creator () /DOCIN FO pdf- RFL1N08, RFL1N10 Semiconductor 1A, 80V and 100V, 1.200 Ohm,


    Original     		PDF O204AA) RFL1N08, RFL1N10 AN7254 AN7260. RFL1N10 AN7260 RFL1N08

    RFL1N10L

    Abstract: AN7254 AN7260
    Text: RFL1N10L 1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET September 1998 Features Description • 1A, 100V This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level 5V driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special


    Original     		PDF RFL1N10L O-205AF RFL1N10L AN7254 AN7260

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


    Original     		PDF T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode

    IRF0120

    Abstract: VN0109N5 VN99AK IRF012 IRF0122 VN98AK svn98ak VN-99-A VN98AJ k604
    Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Clsa t, Min (S) Max (V) Max Max (s) (F) tf Max (s) Toper Max eC) Package Style N-Channel Enhancement-Type, (Co nt' d) 5 10 IXTH67N08 (A) IXTM67N08 (A)


    Original     		PDF IXTH67N08 IXTM67N08 IXTH75N08 IXTM75N08 MTE75N08 VN0109N9 BS170F VN0109N3 VN0109N2 IRF0120 VN0109N5 VN99AK IRF012 IRF0122 VN98AK svn98ak VN-99-A VN98AJ k604

    PA0016

    Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
    Text: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30


    Original     		PDF 14-dagar PA0016 STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor

    AN7254

    Abstract: 1N08 AN7260 RFL1N08 RFL1N10
    Text: S RFL1N08, RFL1N10 S e m ico n d ucto r 7 1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs September 1998 Features Description • 1A, 80V and 100V These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as


    OCR Scan     		PDF RFL1N08, RFL1N10 RFL1N08 O-205AF RFL1N08 RFL1N10 TA09282. AN7254 AN7260. 1N08 AN7260

    RFL1N08L

    Abstract: RFL1N10L RFP2N08L RFP2N10L
    Text: Logic-Level Power MOSFETs_ RFL1N08L, RFL1N10L, RFP2N08L, RFP2N10L File Number 1510 N-Channel Logic Level Power Fielcf-Effect Transistors L2 FET 1 and 2 A, 80 V and 100 V ros(on): 1.05fi and 1 .2 0 Features: • Design optim ized fo r 5 volt gate drive


    OCR Scan     		PDF RFL1N08L, RFL1N10L, RFP2N08L, RFP2N10L 92cs-3374i RFL1N08L RFL1N10L RFP2N08L RFP2N10L

    RFL1N10

    Abstract: No abstract text available
    Text: Hormis S RFL1N08L, RFL1N10L S e m ico n d ucto r 7 1A, 80V and 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFETs September 1998 Features Description • 1A, 80V and 100V RFL1N08L TO -205AF RFL1N08L These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use


    OCR Scan     		PDF RFL1N08L, RFL1N10L TA09524. AN7254 AN7260. RFL1N10

    ic 4588

    Abstract: No abstract text available
    Text: 2 RFL1N08 RFL1N10 h a r r is N -C h a n n e l E n h an ce m e n t-M o d e Pow er F ie ld -E ffe c t Transistors August 1991 Package F e a tu re s T O -2 0 5 A F • 1A, 80 V and 100V • RD S on = 1 -2 f i • S O A is P ow er-D issip atio n Limited • N anosecond Switching S peeds


    OCR Scan     		PDF RFL1N08 RFL1N10 RFL1N10 ic 4588

    RFL1N08

    Abstract: RFL1N10 RFP2N08 RFP2N10 92CS-W528 S4352
    Text: Standard Power MOSFETs RFL1N08, RFL1N10, RFP2N08, RFP2N10 File N um ber 1385 N-Channel Enhancement-Mode Power Field-Effect Transistors 1 and 2 A, 80 and 100 V rDs on : 1.05CÎ and 1.2fi Features: • SOA is power-dissipation lim ited m Nanosecond sw itching speeds


    OCR Scan     		PDF RFL1N08, RFL1N10, RFP2N08, RFP2N10 RFL1N08 RFL1N10 RFP2N08 RFP2N10 92CS-W528 S4352

    RFP2N06

    Abstract: 1N10 RFL1N10 RFL1N08 RFP2N08 RFP2N10
    Text: G E SOLID STATE Ôï i>i”|3fl7SDfll OOlflO'ï? b 3875081 G E S O L I D S T A T E Standard Power MOSFETs 01E 18097 D T -3 ? ~ RFL1N08, RFL1N10, RFP2N08, RFP2N10 * File Num ber N-Charinel Enhancement-Mode


    OCR Scan     		PDF RFL1N08, RFL1N10, RFP2N08, RFP2N10 RFL1N08 RFL1N10 RFP2N08 RFP2N10 2CS-35I75 S2CS-96138 RFP2N06 1N10

    transistor N342

    Abstract: TC1-C RFL1N08L RFL1N10L TA9525 RFP2N08L RFP2N10L RFP mosfets
    Text: 38 75081 =01 G E SOL ID S T A TE Logic-Level Power MOSFÉTs T e 1 3 ö 7 5 0 ö 1 0 0 1 0 4 2 4 t, 01E18424 D 'T ~ '~ ^ 7~ ' RFL1N08L, RFL1N10L, RFP2N08L, RFP2N10L File Number 1510 N-Channel Logic Level


    OCR Scan     		PDF RFL1N08L, RFL1N10L, RFP2N08L, RFP2N10L RFL1N08L RFL1N10L RFP2N08L transistor N342 TC1-C TA9525 RFP mosfets

    buz11

    Abstract: BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N RFK45N05
    Text: THOnSON/ DISTRIBUTOR 5flE D • ^05^873 □□□57D3 5fl3 Wt TCSK P o w er M O S FE T s RF and B U Z -S e rie s P ow er M O S FE Ts — N -C h a n n e l Package Maximum Ratings BV q s S V id s (A) r DS(ON) OHMS 50 2 4 13 14 15 25 25 30 45 0.75 0.60 0.12


    OCR Scan     		PDF T0-204 O-205 O-218 O-220 RFM15N05 RFM25N05 RFK45N05 RFL2N05 RFH45N05 RFP4N05 buz11 BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


    OCR Scan     		PDF 2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r

    field-effect transistors

    Abstract: 05LSM RFP8N18L RFP25N06L transistors 2N6904 field-effect transistor RFP14N05L M 615 transistor transistor 684
    Text: _ POWER MOSFETs 6 L O G IC L E V E L P O W E R M O S F E T s PAGE 2N6901 N-Channel Logic Level Power MOS Field-Effect Transistor L2F E T . 6-3 2N6902 N-Channel Logic Level Power MOS Field-Effect Transistor (L2F E T ) .


    OCR Scan     		PDF 2N6901 2N6902 2N6903 2N6904 RFL1N08L, RFL1N10L RFL1N12L, RFL1N15L RFL1N18L, RFL1N20L field-effect transistors 05LSM RFP8N18L RFP25N06L transistors field-effect transistor RFP14N05L M 615 transistor transistor 684

    RFL1N10L

    Abstract: No abstract text available
    Text: m H a r r is August 1991 R F L 1 N 0 8 L R F L 1 N 1 0 L N-Channel Logic Level Power Field-Effect Transistors L2 FET Package F e a tu re s TO-205AF BOTTOM VIEW • 1 A, 8 0 V and 100V • rD S (0 N ) = • Design O p tim ized fo r 5V G ate Drives GATE SOURCE


    OCR Scan     		PDF O-205AF RFL1N10L

    thyristor TAG 8506

    Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
    Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y


    OCR Scan     		PDF 11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719

    2N6901

    Abstract: 2N6903 THOMSON DISTRIBUTOR RFL1N10L RFL2N05L RFM15N05L 2n6902 RFD14N05LSM RFD16N05L RFP14N05L
    Text: _ THOMSON/ 5SE D DISTRIBUTOR • TDEtifi73 0G0S713 TCS< 4EB Power MOSFETs Logic Level - L2FETs — N-Channel Types N. Package Q Maximum Ratings BVpsS V >d s (A) 'DS(ON) O HMS e AS (mj) 50 2 4 15 14 16 25 50 0.75 0.60 0.14 0.100 0.047 0.047 0.22*


    OCR Scan     		PDF 0G0S713 O-204 O-205 O-220 O-251 O-252 O-247 RFL2N05L RFM15N05L RFP4N05L 2N6901 2N6903 THOMSON DISTRIBUTOR RFL1N10L 2n6902 RFD14N05LSM RFD16N05L RFP14N05L

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		PDF 1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40