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    PTB23006U

    Abstract: MLC718 SOT440A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PTB23006U Microwave power transistor Preliminary specification Supersedes data of December 1994 1997 Feb 19 Philips Semiconductors Preliminary specification Microwave power transistor FEATURES • Very high power gain • Diffused emitter ballasting resistors


    Original     		PTB23006U SCA53 127147/00/02/pp12 PTB23006U MLC718 SOT440A PDF

    transistor c 5855

    Abstract: npn Epitaxial Silicon zg NPN Silicon Planar Epitaxial Transistors PTB23006U T4333 Outline T44
    Text: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Very high power gain • Diffused emitter ballasting resistors improve ruggedness QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class C


    OCR Scan     		PTB23006U FO-41B 7110fl2b D0T433b FO-41B. ocma37 transistor c 5855 npn Epitaxial Silicon zg NPN Silicon Planar Epitaxial Transistors PTB23006U T4333 Outline T44 PDF