sdram schematic diagram
Abstract: MT48LC1M16A1S D4564163 AN218 EP7312 a2523 MT48LC4M16A2
Text: AN218 Application Note INTERFACING THE EP7312 WITH SDRAM 1. INTRODUCTION The focus of this note is to aid product developers in successfully creating an EP7312 design that utilizes SDRAM. It does not cover the software configuration or internal operation of the
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AN218
EP7312
EP7312,
EP73xx
DS508)
T48LC1M
16A1S
MT48LC1M16A1S
sdram schematic diagram
D4564163
AN218
a2523
MT48LC4M16A2
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uPC2581
Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8
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PD7500
X10679EJAV0SG00
MF-1134)
1995P
uPC2581
uPC2002
2sd1557
uPA67C
uPB582
upc1237
uPC317
2P4M PIN DIAGRAM
2SC4328
uPC157
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wp1a
Abstract: IC-3394 4516161 UPD4516421G5-A12-7JF BD3/1/TX13/7.9/PP10/UPD4516421G5-A12-7JF
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The µPD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152 x 4 × 2, 1,048,576 × 8 × 2 and 524,288 × 16 × 2 word × bit × bank , respectively.
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PD4516421,
16M-bit
216-bit
44-pin
50-pin
wp1a
IC-3394
4516161
UPD4516421G5-A12-7JF
BD3/1/TX13/7.9/PP10/UPD4516421G5-A12-7JF
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BA1T12
Abstract: BA1T11 BA2T13 ba6t17 PD4516161G5 A10 7JF PD4516821G5 PD4516161 1994P PD4516421G5
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The µPD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152x4×2, 1,048,576×8×2 and 524,288×16×2 word×bit×bank , respectively.
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PD4516421,
16M-bit
216-bit
44-pin
50-pin
BA1T12
BA1T11
BA2T13
ba6t17
PD4516161G5
A10 7JF
PD4516821G5
PD4516161
1994P
PD4516421G5
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sc5 s dc 6v relay
Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997
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Corpora1-504-2860
X10679EJEV0SG00
sc5 s dc 6v relay
P48D-70-600
UPD66010
UPD7752
AC03E
uPD7520
uPA1601
UPD70208H
uPD72020
uPD16503
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a2-xqa
Abstract: IC-3394
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD 4516421 , 4516821 , 4516161 16M-bit Synchronous DRAM Description The ¿iPD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152 x 4 x 2,1,048,576 x 8 x 2 and 524,288 x 16 x 2 word x bit x bank , respectively.
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16M-bit
uPD4516421
uPD4516821
uPD4516161
216-bit
44-pin
50-pin
IR35-107-2
VP15-107-2
a2-xqa
IC-3394
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i8085
Abstract: Nec AC 160
Text: D A TA S H E E T NEC MOS INTEGRATED CIRCUIT jiPD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description T h e //PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit sy n c h ro n o u s d y n a m ic ra n d o m -a cce ss m e m o rie s, o rg an ized as 2 ,0 9 7 ,1 5 2 x4 x2 , 1,048,576x8x2 and 5 2 4,28 8x1 6x2 w o rd xb itx b a n k , re sp e ctiv e ly .
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uPD4516421
uPD4516821
uPD4516161
16M-bit
//PD4516421,
216-bit
576x8x2
44-pin
i8085
Nec AC 160
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ //¿PD4516421-PC, 4516821-PC, 4516161-PC 16M-bit Synchronous DRAM for PC SDRAM Lite D e s c rip tio n The //PD4516421-PC, 4516821-PC, 4516161-PC are high-speed 16,777,216-bit synchronous dynamic randomaccess memories, organized as 2,097,152 x 4 x 2, 1,048,576 x 8 * 2 and 524,288 x 16 x 2 word x bit x bank ,
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uPD4516421-PC
uPD4516821-PC
uPD4516161-PC
16M-bit
//PD4516421-PC,
4516821-PC,
4516161-PC
216-bit
44-pin
50-pin
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A91A
Abstract: uPD4516161AG5-A10-9NF nec 44pin NEC 4516821 TNC 24 mk 2 uPD4516161AG5-A80-9NF uPD4516161AG5-A10 NEC MEMORY
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD4516421A, 4516821 A, 4516161A 16M-bit Synchronous DRAM Description The ¿¡PD4516421 A, 4516821 A, 4516161A are high-speed 16,777,216-bit synchronous dynam ic random -access mem ories, organized as 2,097,152 x 4 x 2, 1,048,576 x 8 x 2 and 524,288 x 16 x 2 word x bit x bank , respectively.
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uPD4516421A
uPD4516821A
uPD4516161A
16M-bit
PD4516421
516161A
216-bit
44-pin
50-pin
5-80-9N
A91A
uPD4516161AG5-A10-9NF
nec 44pin
NEC 4516821
TNC 24 mk 2
uPD4516161AG5-A80-9NF
uPD4516161AG5-A10
NEC MEMORY
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uPD4516161AG5-A80-9NF
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT juPD4516421 A, 4516821 A, 4516161A for Rev. P 16M-bit Synchronous DRAM Description The /¿PD4516421 A, 4516821 A, 4516161A are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152 x 4 x 2, 1,048,576 x 8 x 2 and 524,288 x 16 x 2 word x bit x bank , respectively.
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uPD4516421A
uPD4516821A
uPD4516161A
16M-bit
PD4516421
516161A
216-bit
44-pin
50-pin
uPD4516161AG5-A80-9NF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT ' /¿PD4516421A, 4516821 A, 4516161A ; 16M-bit Synchronous DRAM i i j D escrip tio n The//PD4516421 A, 4516821 A, 4516161A are high-speed 16,777,216-bit synchronous dynamic random-access ’ memories, organized as 2,097,152 x 4 x 2,1,048,576 x 8 x 2 and 524,288 x 16 x 2 word x bit x bank , respectively.
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uPD4516421A
516161A
16M-bit
The//PD4516421
516161A
216-bit
44-pin
50-pin
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nec d4516
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The ¿tPD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynam ic random-access m em ories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 w ordxbitxbank , respectively.
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uPD4516421
uPD4516821
uPD4516161
16M-bit
tPD4516421,
216-bit
152x4x2,
576x8x2
288x16x2
44-pin
nec d4516
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /;PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM D escription The /¿PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access m emories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 wordxbitxbank , respectively.
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PD4516421,
16M-bit
216-bit
152x4x2,
576x8x2
288x16x2
44-pin
50-pin
S50G5-80-7JF3
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The /¿PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152 x 4 x 2 , 1,048,576 x 8 x 2 and 524,288 x 16 x 2 word x bit x bank , respectively.
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uPD4516421
uPD4516821
uPD4516161
16M-bit
216-bit
44-pin
50-pin
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4516821G5
Abstract: 512KX16X2
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4516421-PC, 4516821-PC, 4516161-PC 16M-bit Synchronous DRAM for PC SDRAM Lite Description ThefiPD 4516421-PC , 4516821-PC, 4516161-PC are high-speed 16,777,216-bit synchronous dynam ic randomaccess m em ories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 wordxbitxbank , respectively.
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uPD4516421-PC
uPD4516821-PC
uPD4516161-PC
16M-bit
4516421-PC
4516821-PC,
4516161-PC
216-bit
152x4x2,
576x8x2
4516821G5
512KX16X2
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC/ MOS INTEGRATED CIRCUIT _ /iiPD4516421-PC, 4516821-PC, 4516161-PC 16M-bit Synchronous DRAM for PC SDRAM Lite D e s c rip tio n The ¿¿PD4516421-PC, 4516821-PC, 4516161-PC are high-speed 16,777,216-bit synchronous dynamic randomaccess memories, organized as 2,097,152 x 4 x 2 , 1,048,576 x 8 x 2 and 524,288 x 1 6 x 2 word x bit x bank ,
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uPD4516421-PC
uPD4516821-PC
uPD4516161-PC
16M-bit
PD4516421-PC,
4516821-PC,
4516161-PC
216-bit
44-pin
50-pin
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11DQ60
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-451AB644 1M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-451 AB644 is a 1,048,576 words by 64 bits synchronous dynamic RAM module on which 4 pieces of 16 M S D R A M : /¿PD4516161 are assembled.
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MC-451AB644
64-BIT
MC-451AB644
uPD4516161
MC-451AB644-A10
11DQ60
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