Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4264400, 4265400 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, FAST PAGE MODE Description The µ PD4264400, 4265400 are 16,777,216 words by 4 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.
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PDF
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PD4264400,
32-pin
PD4264400-A50
PD4265400-A60
PD4264400-A70
PD4265400-A70
PD4265400-A80
P32LE-400A
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PD4265805
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4264805, 4265805 64 M-BIT DYNAMIC RAM 8 M-WORD BY 8-BIT, HYPER PAGE MODE EDO Description The µ PD4264805, 4265805 are 8,388,608 words by 8 bits CMOS dynamic RAMs with optional hyper page mode (EDO). Hyper page mode (EDO) is a kind of the page mode and is useful for the read operation.
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Original
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PDF
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PD4264805,
32-pin
PD426cial:
PD4265805
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4264160, 4265160 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, FAST PAGE MODE Description The µ PD4264160, 4265160 are 4,194,304 words by 16 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.
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Original
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PDF
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PD4264160,
16-BIT,
50-pin
PD4265160-A50
PD4264160-A60
PD4265160-A60
PD4265160-A70
PD4265160-A80
PD4264160-A80
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PD4264800
Abstract: PD4265800
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4264800, 4265800 64 M-BIT DYNAMIC RAM 8 M-WORD BY 8-BIT, FAST PAGE MODE Description The µPD4264800, 4265800 are 8,388,608 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.
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Original
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PDF
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PD4264800,
32-pin
PD4264800-A50
PD4265800-A50
PD4264800-A60
PD4265800-A60
PD4264800
PD4265800
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4265165
Abstract: 4265165G5 PD4264165 pd4265165
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4264165, 4265165 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description The µPD4264165, 4265165 are 4,194,304 words by 16 bits CMOS dynamic RAMs with optional hyper page mode
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Original
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PDF
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PD4264165,
16-BIT,
50-pin
PD4264165-A50
PD4265165-A50
PD4264165-A60
PD4265165-A60
4265165
4265165G5
PD4264165
pd4265165
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PD4264800
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4264800, 4265800 64 M-BIT DYNAMIC RAM 8 M-WORD BY 8-BIT, FAST PAGE MODE Description The µPD4264800, 4265800 are 8,388,608 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.
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Original
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PDF
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PD4264800,
32-pin
PD4265800-A50
PD4265800-A60
PD4264800-A70
PD4265800-A70
PD4265800-A80
P32LE-400A
PD4264800
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83TL-7E07A
Abstract: 42644LA-80L
Text: SEC PD42644 1,048,576 X 4-Bit Silicon File NEC Electronics Inc. Description Pin Configurations The £/PD42644 is a fast-page, low-power dynamic RAM organized as 1,048,576 words by 4 bits and designed to operate from a single +5-volt power supply. Advanced
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uPD42644
/PD42644
pPD42644
JHPD42644
ffPD42644
1SL-18
fPD42644
fiPD42644
83TL-7E07A
42644LA-80L
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168pin dram socket
Abstract: No abstract text available
Text: Part Number 64M DRAM U PD4264 4 00 LE - A 70 NEC CMOS Dynamic RAM— 64M Dynamic RAM, Refresh Cycle — 64: 8K Refresh 65 : 4K Refresh :x 4 8 :x 8 Fast Page M : TSOP II (400mil)
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UPD4264400LE-A70
400mil)
168-pin
MC-42
it---------------1000:
Organization--------------------------64
168pin dram socket
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD4264800, 4265800 64 M-BIT DYNAMIC RAM 8 M-WORD BY 8-BIT, FAST PAGE MODE Description The ^PD4264800, 4265800 are 8,388,608 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.
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OCR Scan
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PDF
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jUPD4264800,
PD4264800,
32-pin
4264800-A50
4264800-A70
4265800-A70
4265800-A80
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Untitled
Abstract: No abstract text available
Text: NEC PD42641 4,194,304 x 1-Bit Silicon File NEC Electronics Inc. Description Pin Identification The ¿/PD42641 is a fast-page, low-power dynamic RAM organized as 4,194,304 words by 1 bit and designed to operate from a single +5-volt power supply. Advanced
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uPD42641
/PD42641
83CL-M868
lfefc-15
jiPD42641
JJPD42641
JUPD42641
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D4264400
Abstract: D42644
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / _ jiP D 4 2 6 4 4 0 0 , 4 2 6 5 4 0 0 6 4 M -B IT D YN AM IC RAM 16 M-W ORD B Y 4-BIT, F A S T P A G E M OD E D e s c r ip tio n The / i PD4264400, 4265400 are 16,777,216 words by 4 bits CMOS dynamic RAMs. The fast page mode capability
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OCR Scan
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PDF
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uPD4264400
uPD4265400
32-pin
iPD4264400-A50
265400-A
MPD4264400.
MPD4264400G5-7JD,
4265400G5-7JD:
D4264400
D42644
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NEC uPD
Abstract: 4264405 D42S65405
Text: DATA SHEET NEC / _/ MOS INTEGRATED CIRCUIT ¿¿PD4264405, 42S65405, 4265405 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, EDO Description The ¿/PD4264405, 42S65405, 4265405 are 16,777,216 w ords by 4 bits C M OS dynam ic RAMs w ith optional EDO. EDO is a kind of the page m ode and is useful fo r the read operation.
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uPD4264405
uPD42S65405
uPD4265405
/PD4264405,
42S65405,
42S65405
32-pin
JPD4264405-A50
PD42S65405-A50,
NEC uPD
4264405
D42S65405
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT / //PD4264400, 4265400 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, FAST PAGE MODE D e s c rip tio n T h e /¿ P D 4 2 6 4 4 0 0 ,4 2 6 5 4 0 0 a re 1 6 ,7 7 7 ,2 1 6 w o rd s b y 4 b its d y n a m ic C M O S R A M s. T h e fa s t p a g e m o d e c a p a b ility
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uPD4264400
uPD4265400
jjPD4264400-A50
MPD4264400,
P32LE-400A
040-o
16tooo5
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Untitled
Abstract: No abstract text available
Text: PD42641 4,194,304 x 1-Bit Silicon File NEC Electronics Inc. Prelim inary Information Pin Identification Description The /j PD42641 is a fast-page, low-power dynam ic RAM o rganized as 4,194,304 words by 1 bit and designed to o p e ra te from a single + 5 -v o lt power supply. Advanced
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pPD42641
PD42641
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Untitled
Abstract: No abstract text available
Text: N E C ELECTRONICS INC b>4E i WÊ b M E 7 S E S 0030^3=1 3b3 « N E C E ¿/PD4264800, 4265800 8,388,608 X 8-Bit Dynamic CMOS RAM NEC NEC Electronics Inc. Preliminary S e p tem b e r 1993 Description The /PD4264800 and /JPD4265800 are 64M-bit dynam ic RAM s organized as 8,388,608 w ords by 8 bits. They are
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/PD4264800,
/JPD4264800
/JPD4265800
64M-bit
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UPD4264405
Abstract: No abstract text available
Text: PRELIMINARY DATA SH EET NEC MOS INTEGRATED CIRCUIT PD4264405, 4265405 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, HYPER PAGE MODE Description The >PD4264405,4265405 are 16,777,216 words by 4 bits CMOS dynamic RAMs with optional hyper page mode. Hyper page mode is a kind of page mode and is useful for the read operation.
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OCR Scan
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uPD4264405
uPD4265405
iPD4264405
/iPD4264405,
32-pin
fiPD4264405-A50,
4265405-A50
HPD4264405-A60,
4265405-A60
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4216LFF72 3.3 V OPERATION 16M-WORD BY 72-BIT DYNAMIC RAM MODULE BUFFERED TYPE, EDO Description The MC-4216LFF72 is a 16,777,216 words by 72 bits dynamic RAM module on which 18 pieces of 64M DRAM
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MC-4216LFF72
16M-WORD
72-BIT
MC-4216LFF72
uPD4264405
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4216LFH641 3.3 V OPERATION 16M-W ORD BY 64-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-4216LFH641 is a 16,777,216 words by 64 bits dynamic RAM module on which 16 pieces of 64M DRAM
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OCR Scan
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PDF
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MC-4216LFH641
16M-W
64-BIT
MC-4216LFH641
uPD4264405
C-4216LFH641-A50
C-4216LFH641-A60
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-428LFH641 3.3 V OPERATION 8M-WORD BY 64-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-428LFH641 is a 8,388,608 words by 64 bits dynamic RAM module on which 8 pieces of 64M DRAM :
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OCR Scan
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PDF
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MC-428LFH641
64-BIT
MC-428LFH641
uPD4264805
C-428LFH641-A50
C-428LFH641-A60
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Untitled
Abstract: No abstract text available
Text: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-4216LFH641 3.3 V OPERATION 16M-WORD BY 64-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-4216LFH641 is a 16,777,216 words by 64 bits dynam ic RAM module on which 16 pieces of 64M DRAM :
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OCR Scan
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PDF
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MC-4216LFH641
16M-WORD
64-BIT
MC-4216LFH641
uPD4264405
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Untitled
Abstract: No abstract text available
Text: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-428LFH641 3.3 V OPERATION 8M-WORD BY 64-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-428LFH641 is a 8,388,608 words by 64 bits dynam ic RAM module on which 8 pieces of 64M DRAM :
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OCR Scan
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PDF
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MC-428LFH641
64-BIT
MC-428LFH641
uPD4264805
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UPD4265160-A60
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT PD4264160, 4265160 6 4 M -B IT D YN A M IC RAM 4 M -W O R D BY 16-BIT, FAST PAGE M O DE Description The /iPD 4264160,4265160 are 4,194,304 words by 16 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.
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OCR Scan
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PDF
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uPD4264160
uPD4265160
16-BIT,
50-prn
JPD4264160-A50
/PD4265160-A50
/PD4264160-A60
UPD4265160-A60
S50G5-80-7JF3
/iPD4264160,
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT /¿PD4264805, 4265805 64 M-BIT DYNAMIC RAM 8M-WORD BY 8-BIT, HYPER PAGE MODE EDO Description The /PD4264805, 4265805 are 8,388,608 words by 8 bits CMOS dynamic RAMs with optional hyper page mode (EDO). Hyper page mode (EDO) is a kind of the page mode and is useful for the read operation.
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OCR Scan
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PDF
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uPD4264805
uPD4265805
/iPD4264805,
32-pin
/iPD4264805-A50
PD4265805-A50
PD4264805-A60
PD4265805-A60
008tS
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PD4264800
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿¿PD4264800, 4265800 64M -B IT DYNAMIC RAM 8 M-WORD BY 8-BIT, FAST PAGE MODE D e s c rip tio n The iiPD 4264800, 4265800 are 8,388,608 w ords by 8 bits dynam ic CMOS RAMs. The fast page mode capability
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OCR Scan
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PDF
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uPD4264800
uPD4265800
32-pin
PD4264800-A50
/PD4265800-A50
/JPD4264800-A60
/JPD4265800-A60
/JPD4264800-A70
/JPD4265800-A70
PD4264800
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