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    PA28F008SA Search Results

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    PA28F008SA Price and Stock

    Rochester Electronics LLC PA28F008SA85

    IC FLASH 8MBIT PARALLEL
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    DigiKey PA28F008SA85 Bulk 54
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    Intel Corporation PA28F008SA-120

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    Bristol Electronics PA28F008SA-120 247
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    Quest Components PA28F008SA-120 13
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    Chip 1 Exchange PA28F008SA-120 451
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    Intel Corporation PA28F008SA85

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    Rochester Electronics PA28F008SA85 1,160 1
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    ComSIT USA PA28F008SA85 81
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    Component Electronics, Inc PA28F008SA85 21
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    Intel Corporation PA28F008SA-85

    1M X 8 FLASH 12V PROM, 85 NS, PDSO44
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    Quest Components PA28F008SA-85 65
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    PA28F008SA-85 23
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    PA28F008SA-85 12
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    Chip 1 Exchange PA28F008SA-85 544
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    New Advantage Corporation PA28F008SA-85 24 1
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    Intel Corporation PA28F008SA120

    IC,EEPROM,NOR FLASH,1MX8,CMOS,SOP,44PIN,PLASTIC
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    Quest Components PA28F008SA120 27
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    PA28F008SA120 7
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    ComSIT USA PA28F008SA120 635
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    Component Electronics, Inc PA28F008SA120 5
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    PA28F008SA Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PA28F008SA-085 Intel EEPROM Parallel Async Original PDF
    PA28F008SA-120 Intel 8-MBIT (1-MBIT x 8) FlashFileTM MEMORY Original PDF
    PA28F008SA-120 Intel 8-MBIT (1-MBIT x 8) FlashFile MEMORY Original PDF
    PA28F008SA-120 Intel 8 MBIT (1 MBIT x 8) Flash Memory Scan PDF
    PA28F008SA-120 Intel 8-MBIT (1-MBIT x 8) FlashFile Memory Scan PDF
    PA28F008SA-85 Intel 8-MBIT (1-MBIT x 8) FlashFileTM MEMORY Original PDF
    PA28F008SA-85 Intel 8-MBIT (1-MBIT x 8) FlashFile MEMORY Original PDF
    PA28F008SA-85 Intel 8 MBIT (1 MBIT x 8) Flash Memory Scan PDF
    PA28F008SA-85 Intel 8-MBIT (1-MBIT x 8) FlashFile Memory Scan PDF
    PA28F008SA-90 Intel 8-MBIT (1-MBIT x 8) FlashFile Memory Scan PDF
    PA28F008SA-L200 Intel 8-MBIT (1 MBIT x 8) FLASHFILE MEMORY Original PDF
    PA28F008SA-L250 Intel 8-MBIT (1-MBIT x 8) FlashFile Memory Scan PDF

    PA28F008SA Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SAL 41

    Abstract: IC51-0442-1536
    Text: CIC-44PS-40D-A6-YAM Rev 2 44-Lead PSOP to a 40-Pin DIP Mar-98 (EXAMPLES) PSOP DEVICES: PA28F008SA / SA-L / SC / S3 / S5 PA28F016SC / S3 / S5 SOCKET: PIN CONFIGURATION: BASE 40-Pin DIP PIN NAMES SOCKET 44-Lead PSOP 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17


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    CIC-44PS-40D-A6-YAM 44-Lead 40-Pin Mar-98 PA28F008SA PA28F016SC SAL 41 IC51-0442-1536 PDF

    IC51-0442-1536

    Abstract: SAL 41
    Text: CIC-44PS-40D-A6-YAM Rev 2 44-Lead PSOP to a 40-Pin DIP 7/97 (EXAMPLES) PSOP DEVICES: PA28F004SC / S3 / S5 PA28F008SA / SA-L / SC / S3 / S5 PA28F016SC / S3 / S5 SOCKET: PIN CONFIGURATION: BASE 40-Pin DIP PIN NAMES SOCKET 44-Lead PSOP 1 2 3 4 5 6 7 8 9 10


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    CIC-44PS-40D-A6-YAM 44-Lead 40-Pin PA28F004SC PA28F008SA PA28F016SC IC51-0442-1536 SAL 41 PDF

    Untitled

    Abstract: No abstract text available
    Text: I P ^ iU ö Ä Ä f in te i 28F008SA 8-MBIT 1-MBIT x 8 F la s h F ile T M MEMORY Extended Temperature Specifications Included High-Density Symmetrically Blocked Architecture — Sixteen 64-Kbyte Blocks Very High-Performance Read — 85 ns Maximum Access Time


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    28F008SA 64-Kbyte PDF

    28F008SA

    Abstract: E28F008SA E0000 SmartDie TB28F008SA
    Text: E PRELIMINARY 5 VOLT FlashFile MEMORY 28F008SA x8 n n n n High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase Cycles per Chip Automated Byte Write and Block Erase


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    28F008SA 64-Kbyte 40-Lead 44-Lead 28F008SA AP-625 28F008SC 28F008 AP-359 E28F008SA E0000 SmartDie TB28F008SA PDF

    28F008SAT

    Abstract: No abstract text available
    Text: inU PRELIMINARY 28F008SA 8-MBIT 1-MBIT X 8 FlashFile MEMORY Extended Temperature Specifications included High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase Cycles


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    28F008SA 64-Kbyte 40-Lead 44-Lead 28F008S AP-364 28F008SAT PDF

    6361A

    Abstract: No abstract text available
    Text: in te l 28F008SA-L 8-MBIT 1 MBIT x 8 F L A S H F I L E t m MEMORY High-Performance Read — 200 ns Maximum Access Time High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Deep Power-Down Mode — 0.20 juA Ice Typical Low-Voltage Operation


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    28F008SA-L 64-Kbyte 44-Lead 6361A PDF

    TB28F008SA-100

    Abstract: psop 44 of PA28F008SA 28F008SA E0000 28F008SA 8-Mbit FlashFile Memory E28F008SA-120 SmartDie intel386sl
    Text: 28F008SA 8-MBIT 1-MBIT x 8 FlashFile TM MEMORY Extended Temperature Specifications Included Y High-Density Symmetrically-Blocked Architecture Sixteen 64-Kbyte Blocks Y Extended Cycling Capability 100 000 Block Erase Cycles 1 6 Million Block Erase Cycles per Chip


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    28F008SA 64-Kbyte 40-Lead 44-Lead TB28F008SA-100 psop 44 of PA28F008SA 28F008SA E0000 28F008SA 8-Mbit FlashFile Memory E28F008SA-120 SmartDie intel386sl PDF

    Device-List

    Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
    Text: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which


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    ALL-11 Z86E73 Z86E83 Z89371 ADP-Z89371/-PL Z8E000 ADP-Z8E001 Z8E001 Device-List cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2 PDF

    a56 transistor

    Abstract: DD28F032SA E28F008SA n28f512 Needhams Electronics that your PROM programming hardware and software Needhams Electronics
    Text: Intel Corporation Memory Components Div. 1900 Prairie City Rd. Folsom, CA 95630 Mail Stop: FM3-83 Needhams Electronics 4630 Beloit Drive #20 Sacramento, CA 95838 REF: Intel and Needhams Electronics Test Services Agreement dated 10/30/95 Dear PROM Programmer Vendor:


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    FM3-83 EMP20 a56 transistor DD28F032SA E28F008SA n28f512 Needhams Electronics that your PROM programming hardware and software Needhams Electronics PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION 28F008SA 8 MBIT 1 MBIT x 8 FLASHFILE MEMORY High-Density Sym m etrically Blocked Architecture — Sixteen 64 KByte Blocks • Very High-Performance Read — 85/90/120 ns Maximum Access Time ■ SRAM-Com patible W rite Interface Extended Cycling Capability


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    28F008SA 40-Lead 44-Lead Flas008SA E28F008SA-85 E28F008SA-90 E28F008SA-120 F28F008SA-85 F28F008SA-90 F28F008S PDF

    Untitled

    Abstract: No abstract text available
    Text: in te l 28F008SA-L 8-MBIT 1 MBIT x 8 F L A S H F IL E T M MEMORY High-Density Symmetrically Blocked Architecture — Sixteen 64-Kbyte Blocks Low-Voltage Operation 3.3V ±0.3V or 5.0V ±10% Vcc Extended Cycling Capability — 10,000 Block Erase Cycles — 160,000 Block Erase


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    28F008SA-L 64-Kbyte -40-L AP-360 25F008SA AP-364 28F008SA ER-27 ER-28 PDF

    Untitled

    Abstract: No abstract text available
    Text: in t e i A O W A t M ! D M F @ I^ ß iflÄ ¥ D fiO 28F008SA-L 8-MBIT (1 MBIT x 8 FLASH FI LETM MEMORY • High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks ■ Low-Voltage Operation 3.3V + 0.3V or 5.0V ±10% Vcc ■ Extended Cycling Capability


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    28F008SA-L 64-Kbyte ebl75 PDF

    28F008SA

    Abstract: E28F008SA-120 E0000 PA28F008SA120 intel386sl SmartDie
    Text: E PRELIMINARY 28F008SA 8-MBIT 1-MBIT X 8 FlashFile MEMORY Extended Temperature Specifications Included n n n n High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase Cycles


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    28F008SA 64-Kbyte AP-627 AP-625 28F008Sc 28F008SA AP-359 AP-364 E28F008SA-120 E0000 PA28F008SA120 intel386sl SmartDie PDF

    IQ80960RP

    Abstract: MON960 80960RD GDB960 N28F020 PLX9060 8250 uart intel
    Text: Product Release Notes MON960 Debug Monitor Release 3.2 These product release notes are divided into the following sections: • Product Checklist • Product Enhancements and New Features • Finding Updates to the Release Notes • IQ80960RD Evaluation Board Support


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    MON960 IQ80960RD IQ80960RP Win32 MON960. 80960RD GDB960 N28F020 PLX9060 8250 uart intel PDF

    pioneer PAL 007 A

    Abstract: PAL 007 pioneer str 6654 PAL 008 pioneer pin details of str W 6654 sem 2106 Yamaichi Electronics ic197 648-0482211 TSOP56 jackson
    Text: D Small Outline Package Guide 1999 3/25/99 4:28 PM cvrpg.doc Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions


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    PDF

    PLCC pin configuration

    Abstract: 40d capacitor 48 tsop flash pinout tsop 48 PIN SOCKET CIC-44PS-44D-A6-YAM psop 44 of PA28F008SA transistor A6 datasheet transistor a6 s 48TS-40D-A6-WEL-S TSOP 56 socket
    Text: SOCKET ADAPTERS CALIFORNIA INTEGRATION COORDINATORS Flash Programming Adapters • ■ ■ ■ ■ ■ ■ ■ ■ ■ Signal integrity - using 6 layer board design - decoupling capacitors optional High quality - durable and easy-touse sockets Long life - plug-in socket option


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    FlashIC-56TS-44D-B6-YAM-S CIC-56TS-44D-C6-YAM-S CIC-56TS-48D-A6-YAM-S CIC-56TS-40D-D6-YAM-S CIC-56TS-48D-B6-YAM-S CIC-56TS-40D-E6-YAM-S CIC-44PS-40D-A6-YAM PLCC pin configuration 40d capacitor 48 tsop flash pinout tsop 48 PIN SOCKET CIC-44PS-44D-A6-YAM psop 44 of PA28F008SA transistor A6 datasheet transistor a6 s 48TS-40D-A6-WEL-S TSOP 56 socket PDF

    39BASE-0101

    Abstract: 39BASE-0201 l 0701 testing of diode DD28F032SA E28F008SA 39BASE-9901
    Text: Intel Corporation Memory Components Div. 1900 Prairie City Rd. Folsom, CA 95630 Mail Stop: FM3-83 Data I/O Corp. 10525 Willows Rd. NE Redmond, WA 98073 REF: Intel and Data I/O Corp. Test Services Agreement dated 08/15/95 Dear PROM Programmer Vendor: I am pleased to inform Data I/O Corp. that your PROM programming hardware and software has passed


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    FM3-83 39BASE-0101 39BASE-0201 l 0701 testing of diode DD28F032SA E28F008SA 39BASE-9901 PDF

    E28F016SV-70

    Abstract: E28F016SV70 E28F016SA70 44PS A6 t E28F016SA-70 N28F010-120 P629 transistor A6 datasheet transistor a6 s
    Text: Intel Corporation Memory Components Div. 1900 Prairie City Rd. Folsom, CA 95630 Mail Stop: FM3-83 SMS Mikrocomputer Systeme GmbH Im Grund 15 D-88239 Wangen, Germany REF: Intel and SMS Mikrocomputer Systeme GmbH Test Services Agreement dated 05/08/96 Dear PROM Programmer Vendor:


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    FM3-83 D-88239 PLUS48 PLUS48 E28F016SV-70 E28F016SV70 E28F016SA70 44PS A6 t E28F016SA-70 N28F010-120 P629 transistor A6 datasheet transistor a6 s PDF

    82360SL

    Abstract: 29042
    Text: in t e ! 28F008SA 8-MBIT 1-MBIT x 8 F la s h F ile T M MEMORY Extended Temperature Specifications Included u High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks • Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase


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    28F008SA 64-Kbyte 40-Lead 44-Lead 82360SL 29042 PDF

    SmartDie

    Abstract: 271296 ALi Corporation M1431
    Text: in te i 28F008SA-L 8-MBIT 1 MBIT x 8 F L A S H F IL E T M High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Low-Voltage Operation 3.3V + 0.3V or 5.0V ±10% Vcc Extended Cycling Capability — 10,000 Block Erase Cycles — 160,000 Block Erase


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    28F008SA-L 64-Kbyte 40-Lead 44-Lead 150ns 4fl2bl75 SmartDie 271296 ALi Corporation M1431 PDF

    report on PLCC

    Abstract: TSOP 56 socket Intel 56 TSOP TSOP 44 socket TSOP 56 psop 44 TSOP 48 socket DD28F032SA E28F008SA Intel 48 TSOP
    Text: Intel Corporation Memory Components Div. 1900 Prairie City Rd. Folsom, CA 95630 Mail Stop: FM3-83 Intel Corp. 1900 Prairie City Rd. Folsom, CA 95630 Dear PROM Programmer Vendor: I am pleased to inform Intel Corp. that your PROM programming hardware and software has passed PROM


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    FM3-83 report on PLCC TSOP 56 socket Intel 56 TSOP TSOP 44 socket TSOP 56 psop 44 TSOP 48 socket DD28F032SA E28F008SA Intel 48 TSOP PDF

    Untitled

    Abstract: No abstract text available
    Text: 28F008SA 8-MBIT 1-MBIT X 8 FlashFile MEMORY Extended Temperature Specifications Included • High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks ■ Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase Cycles


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    28F008SA 64-Kbyte Transitions53 PDF

    29043

    Abstract: PPD 3503
    Text: intei A Ë > m M ! D M F @ IB IiM irD @ M ] 28F008SA-L 8-MBIT 1 MBIT x 8 F L A S H F I L E t m MEMORY • High-Density Symmetrically Blocked Architecture — Sixteen 64-K byte Blocks ■ Low -Voltage Operation 3.3V + 0 .3 V or 5.0V ± 10% Vc c ■ Extended Cycling Capability


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    28F008SA-L 44-Lead 29043 PPD 3503 PDF

    TN80C196KC20

    Abstract: TE28F800B3TA120 N80C51FA1 TN80C196KB16 N80C31BH1 TE28F008B3T115 N80C196KC20 DT28F320S5-90 TE28F160F3T120 N80C3224
    Text: Product Change Notification Please respond to your distributor if you have any issues with the timeline or content of this change. No response from customers will be deemed as acceptance of the change and the change will be implemented pursuant to the key milestones set forth in this attached PCN.


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    PLCC44 PLCC68 TN80C196KC20 TE28F800B3TA120 N80C51FA1 TN80C196KB16 N80C31BH1 TE28F008B3T115 N80C196KC20 DT28F320S5-90 TE28F160F3T120 N80C3224 PDF