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    271296 Price and Stock

    Weidmüller Interface GmbH & Co. KG 2712960000

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    ITT Interconnect Solutions 227-1296-000

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    271296 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2712960000 Weidmüller POTENTIAL DISTRIBUTOR TERMINAL, Original PDF

    271296 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    28F008SA

    Abstract: E28F008SA E0000 SmartDie TB28F008SA
    Text: E PRELIMINARY 5 VOLT FlashFile MEMORY 28F008SA x8 n n n n High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase Cycles per Chip Automated Byte Write and Block Erase


    Original     		PDF 28F008SA 64-Kbyte 40-Lead 44-Lead 28F008SA AP-625 28F008SC 28F008 AP-359 E28F008SA E0000 SmartDie TB28F008SA

    TB28F008SA-100

    Abstract: psop 44 of PA28F008SA 28F008SA E0000 28F008SA 8-Mbit FlashFile Memory E28F008SA-120 SmartDie intel386sl
    Text: 28F008SA 8-MBIT 1-MBIT x 8 FlashFile TM MEMORY Extended Temperature Specifications Included Y High-Density Symmetrically-Blocked Architecture Sixteen 64-Kbyte Blocks Y Extended Cycling Capability 100 000 Block Erase Cycles 1 6 Million Block Erase Cycles per Chip


    Original     		PDF 28F008SA 64-Kbyte 40-Lead 44-Lead TB28F008SA-100 psop 44 of PA28F008SA 28F008SA E0000 28F008SA 8-Mbit FlashFile Memory E28F008SA-120 SmartDie intel386sl

    enthalpy

    Abstract: No abstract text available
    Text: VORTEX FLOWMETERS MADE IN USA $ 1752 Basic Unit FV-520B-F-D, shown smaller than actual size ߜ Measures Steam, Gas, and Low Viscosity Liquids ߜ No Moving Parts and No Sensor Contact with Process Fluid ߜ Accuracy Up to 0.8% of Rate ߜ Intelligent Amplifier


    Original     		PDF FV-520B-F-D, FV-500B FV-500B-TBL FV-500B-TBL FV-500B-TBLCC FV-500B-RMK FV-500B-TBL) FV-520B, enthalpy

    28F008SA

    Abstract: E28F008SA-120 E0000 PA28F008SA120 intel386sl SmartDie
    Text: E PRELIMINARY 28F008SA 8-MBIT 1-MBIT X 8 FlashFile MEMORY Extended Temperature Specifications Included n n n n High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase Cycles


    Original     		PDF 28F008SA 64-Kbyte AP-627 AP-625 28F008Sc 28F008SA AP-359 AP-364 E28F008SA-120 E0000 PA28F008SA120 intel386sl SmartDie

    b982

    Abstract: b1676 b896 SP 1191 B1328 B3045 FLASH TRANSLATION LAYER FTL 5498 transistor X28F008SA-120 b3305
    Text: 28F008SA 8-MBIT 1-MBIT x 8 FLASH MEMORY SmartDie Product Specification Y Y Y Y High-Density Symmetrically Blocked Architecture Sixteen 64-Kbyte Blocks Extended Cycling Capability 100K Block Erase Cycles 1 6M Block Erase Cycles per Chip Automated Byte Write and Block Erase


    Original     		PDF 28F008SA 64-Kbyte X28F008SA-120 AP-359 AP-360 25F008SA AP-364 b982 b1676 b896 SP 1191 B1328 B3045 FLASH TRANSLATION LAYER FTL 5498 transistor X28F008SA-120 b3305

    HPM hifn

    Abstract: dell 745 DELL PPC970 ppc970 ibm OPT800 795* HIFN meterflow dell 1530 hifn lzs
    Text: Hifn Pattern Match 2.0 Performance Application Note Intelligent Secure Networking Hifn Confidential . AN-0130-03, 2006, Hi/fn , Inc. All rights reserved. 11/06 No part of this publication may be reproduced, transmitted, transcribed, stored in a retrieval system, or


    Original     		PDF AN-0130-03, AN-0130-03 HPM hifn dell 745 DELL PPC970 ppc970 ibm OPT800 795* HIFN meterflow dell 1530 hifn lzs

    28F008SA-L

    Abstract: 80L186EB E0000
    Text: 28F008SA-L 8-MBIT 1 MBIT x 8 FLASHFILE TM MEMORY Y High-Density Symmetrically-Blocked Architecture Sixteen 64-Kbyte Blocks Y Low-Voltage Operation b 3 3V g 0 3V or 5 0V g 10% VCC Y Extended Cycling Capability 10 000 Block Erase Cycles 160 000 Block Erase


    Original     		PDF 28F008SA-L 64-Kbyte 40-Lead 44-Lead 28F008SA-L 80L186EB E0000

    28F008SAT

    Abstract: No abstract text available
    Text: inU PRELIMINARY 28F008SA 8-MBIT 1-MBIT X 8 FlashFile MEMORY Extended Temperature Specifications included High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase Cycles


    OCR Scan     		PDF 28F008SA 64-Kbyte 40-Lead 44-Lead 28F008S AP-364 28F008SAT

    6361A

    Abstract: No abstract text available
    Text: in te l 28F008SA-L 8-MBIT 1 MBIT x 8 F L A S H F I L E t m MEMORY High-Performance Read — 200 ns Maximum Access Time High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Deep Power-Down Mode — 0.20 juA Ice Typical Low-Voltage Operation


    OCR Scan     		PDF 28F008SA-L 64-Kbyte 44-Lead 6361A

    Intel i7 MTBF

    Abstract: No abstract text available
    Text: in te l 28F008SA 8-MBIT 1-MBIT x 8 F la s h F ile T M MEMORY Extended Temperature Specifications Included High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase


    OCR Scan     		PDF 28F008SA 64-Kbyte 44-Lead Intel i7 MTBF

    Untitled

    Abstract: No abstract text available
    Text: in te i 28F008SA 8-MBIT 1-MBIT x 8 FLASH MEMORY SmartDle Product Specification High-Density Symmetrically Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100K Block Erase Cycles — 1.6M Block Erase Cycles per Chip Automated Byte Write and Block Erase


    OCR Scan     		PDF 28F008SA 64-Kbyte X28F008SA-120 AP-359, AP-360, 25F008SA AP-364

    Untitled

    Abstract: No abstract text available
    Text: in t e i A O W A t M ! D M F @ I^ ß iflÄ ¥ D fiO 28F008SA-L 8-MBIT (1 MBIT x 8 FLASH FI LETM MEMORY • High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks ■ Low-Voltage Operation 3.3V + 0.3V or 5.0V ±10% Vcc ■ Extended Cycling Capability


    OCR Scan     		PDF 28F008SA-L 64-Kbyte ebl75

    82360SL

    Abstract: 29042
    Text: in t e ! 28F008SA 8-MBIT 1-MBIT x 8 F la s h F ile T M MEMORY Extended Temperature Specifications Included u High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks • Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase


    OCR Scan     		PDF 28F008SA 64-Kbyte 40-Lead 44-Lead 82360SL 29042

    SmartDie

    Abstract: 271296 ALi Corporation M1431
    Text: in te i 28F008SA-L 8-MBIT 1 MBIT x 8 F L A S H F IL E T M High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Low-Voltage Operation 3.3V + 0.3V or 5.0V ±10% Vcc Extended Cycling Capability — 10,000 Block Erase Cycles — 160,000 Block Erase


    OCR Scan     		PDF 28F008SA-L 64-Kbyte 40-Lead 44-Lead 150ns 4fl2bl75 SmartDie 271296 ALi Corporation M1431

    E28F008SA-120

    Abstract: E28F008SA 28F008SA
    Text: • High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks ■ Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase Cycles per Chip n Automated Byte Write and Block Erase — Command User Interface — Status Register


    OCR Scan     		PDF 64-Kbyte 40-Lead 44-Lead 28F008SA AP-627 AP-625 28F008Sc AP-359 E28F008SA-120 E28F008SA

    28F008SA

    Abstract: No abstract text available
    Text: 5 VOLT FlashFile MEMORY 28F008SA x8 • High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks ■ Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase Cycles per Chip ■ ■ Automated Byte Write and Block Erase


    OCR Scan     		PDF 28F008SA 64-Kbyte 40-Lead 44-Lead 28F004S5, 28F008S5, 28F016S 28F004S3, 28F008S3, 28F008SA

    Untitled

    Abstract: No abstract text available
    Text: P R S ILD Q ilD liO A H V in t e J 28F008SA 8-MBIT 1-MBIT x 8 F la s h F ile T M MEMORY Extended Temperature Specifications Included High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100,000 Block Erase Cycles


    OCR Scan     		PDF 28F008SA 64-Kbyte

    Untitled

    Abstract: No abstract text available
    Text: A G M & N K D I O K H F K [M lA ‘irD M 28F008SA-L 8-MBIT 1 MBIT x 8 F L A S H F I L E t m MEMORY • ■ High-Performance Read — 200 ns Maximum Access Time a Deep Power-Down Mode High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks


    OCR Scan     		PDF 28F008SA-L 64-Kbyte

    Untitled

    Abstract: No abstract text available
    Text: in te i 0 M F @ fà G $ A 7 0 M 28F008SA-L 8-MBIT (1 MBIT x 8 F L A S H F IL E T M MEMORY High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Low-Voitage Operation 3.3V ±0.3V or 5.0V ±10% Vcc Extended Cycling Capability — 10,000 Block Erase Cycles


    OCR Scan     		PDF 28F008SA-L 44-Lead 64-Kbyte

    ER-27

    Abstract: 5498 transistor Intel Corporation esd testing flash memory SmartDie F008S
    Text: in te i 28F008SA 8-MBIT 1-MBIT x 8 FLASH MEMORY SmartDie Product Specification High-Density Symmetrically Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100K Block Erase Cycles — 1.6M Block Erase Cycles per Chip Automated Byte Write and Block Erase


    OCR Scan     		PDF 28F008SA 64-Kbyte F008S 120ns AP-359, AP-360, 25F008SA AP-364, ER-27 5498 transistor Intel Corporation esd testing flash memory SmartDie