USB B PCB RIGHT ANGLE 4 PIN
Abstract: usb mini dwg
Text: 7 8 6 5 3 4 1 2 REV - DESCRIPT - DATE - APPRVD B UPDATED JUNE 1,07 AG C DIMENSIONS ADDED OCT26,07 AG . REAR SHIELD, 0.3MM THICKNESS F F 0.393 9.98 SHIELD THICKNESS 0.3MM NOT INCLUDED DUST COVER,SEE DWG NO. MUSB-2E151-005BP FOR DETAIL 0.098 2.50 0.208 5.3 0.362
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OCT26
MUSB-2E151-005BP
P-MUSB-E151-XX
USB B PCB RIGHT ANGLE 4 PIN
usb mini dwg
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mmic-amplifier
Abstract: VPS05178 337 BGA
Text: BGA 312 Silicon Bipolar MMIC-Amplifier 3 Cascadable 50 -gain block 11 dB typical gain at 1.0 GHz 4 9 dBm typical P -1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.0 GHz 2 1 RF IN RF OUT/Bias 1 VPS05178 3 Circuit Diagram 2, 4 GND EHA07312 Type Marking BGA 312
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VPS05178
EHA07312
OT-143
Oct-26-1999
mmic-amplifier
VPS05178
337 BGA
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Bb515
Abstract: bf999
Text: BF 999 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 999 LBs Pin Configuration 1=G 2=D Package
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VPS05161
OT-23
EHT07315
EHT07316
BB515
EHM07024
Oct-26-1999
Bb515
bf999
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Untitled
Abstract: No abstract text available
Text: BGX 400 Silicon Switching Diodes Preliminary data 3 Switching applications High breakdown voltage Halfbridge rectifier 2 1 VPS05161 1 3 2 EHA07365 Type Marking BGX 400 GXs Pin Configuration 1=C1/A2 2=C2 Package 3=A1 SOT-23 Maximum Ratings Parameter Symbol
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VPS05161
EHA07365
OT-23
Oct-26-1999
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VSO05561
Abstract: No abstract text available
Text: BF 799W NPN Silicon RF Transistor 3 For linear broadband amplifier application up to 500 MHz SAW filter driver in TV tuners 2 1 Type Marking BF 799W LKs Pin Configuration 1=B 2=E VSO05561 Package 3=C SOT-323 Maximum Ratings Parameter Symbol Value Unit
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VSO05561
OT-323
Oct-26-1999
100MHz
EHT07116
EHT07117
VSO05561
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MARKING 19S
Abstract: BFG19S VPS05163
Text: BFG 19S NPN Silicon RF Transistor For low noise, low distortion broadband 4 amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 10 mA to 70 mA 3 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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VPS05163
BFG19S
OT-223
900MHz
Oct-26-1999
MARKING 19S
BFG19S
VPS05163
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Untitled
Abstract: No abstract text available
Text: BF 517 NPN Silicon RF Transistor 3 For amplifier and oscillator applications in TV-tuners 2 1 Type Marking BF 517 LRs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 15 Collector-base voltage
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VPS05161
OT-23
Oct-26-1999
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transistor zs
Abstract: transistor MJE -024 BFR340T BFR34* transistor C5 MARKING TRANSISTOR
Text: BFR340T NPN Silicon RFTransistor Preliminary data 3 Low voltage/ low current operation Transistor frequency of 14 GHz High insertion gain Ideal for low current amplifiers and oscillators 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR340T
VPS05996
EHA07524
Oct-26-2001
transistor zs
transistor MJE -024
BFR340T
BFR34* transistor
C5 MARKING TRANSISTOR
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marking u1s SOT-143
Abstract: VPS05178 chip Marking 3A3
Text: BGX 50A Silicon Switching Diode Array 3 • Bridge configuration • High-speed switching diode chip 4 2 1 2 3 VPS05178 1 4 EHA00007 Type Marking BGX 50A U1s Pin Configuration 1=C1/C2 2=A1/C4 3=A3/A4 Package 4=A2/C3 SOT-143 Maximum Ratings Parameter Symbol
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VPS05178
EHA00007
OT-143
EHB00147
EHB00148
Oct-26-1999
EHB00149
marking u1s SOT-143
VPS05178
chip Marking 3A3
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VPS05178
Abstract: BGA 310
Text: BGA 310 Silicon Bipolar MMIC-Amplifier 3 Cascadable 50 -gain block 9 dB typical gain at 1.0 GHz 4 9 dBm typical P -1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz 2 1 RF IN RF OUT/Bias 1 VPS05178 3 Circuit Diagram 2, 4 GND EHA07312 Type Marking BGA 310
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VPS05178
EHA07312
OT-143
Oct-26-1999
VPS05178
BGA 310
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VPS05161
Abstract: No abstract text available
Text: BF 771 NPN Silicon RF Transistor 3 For modulators and amplifiers in TV and VCR tuners 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 771 RBs Pin Configuration 1=B 2=E Package 3=C SOT-23 Maximum Ratings
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VPS05161
OT-23
Oct-26-1999
VPS05161
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SC-75
Abstract: GMA marking
Text: BFR 181T NPN Silicon RF Transistor Preliminary data 3 For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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VPS05996
SC-75
900MHz
Oct-26-1999
SC-75
GMA marking
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VSO05561
Abstract: MARKING 1t SOT- 323
Text: BF 771W NPN Silicon RF Transistor 3 For modulators and amplifiers in TV and VCR tuners 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 771W RBs Pin Configuration 1=B 2=E Package 3=C SOT-323 Maximum Ratings
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VSO05561
OT-323
Oct-26-1999
VSO05561
MARKING 1t SOT- 323
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k d 998 0
Abstract: transistor BF 998 998 transistor bf998 EHT0730 VPS05178 BF 998
Text: BF 998 Silicon N-Channel MOSFET Tetrode 3 Short-channel transistor with high S/C quality factor 4 For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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VPS05178
OT-143
Res00
EHT07305
EHT07306
Oct-26-1999
k d 998 0
transistor BF 998
998 transistor
bf998
EHT0730
VPS05178
BF 998
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VPS05163
Abstract: BSP 17 D
Text: BSP 60 . BSP 62 PNP Silicon Darlington Transistors • High collector current 4 • Low collector-emitter saturation voltage • Complementary types: BSP 50 . BSP 52 NPN 3 2 1 Pin Configuration VPS05163 Type Marking Package BSP 60 BSP 60 1=B 2=C 3=E
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VPS05163
OT-223
Oct-26-1999
EHP00669
EHP00670
100MHz
EHP00668
VPS05163
BSP 17 D
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VPS05163
Abstract: BSP52
Text: BSP 50 . BSP 52 NPN Silicon Darlington Transistors • High collector current 4 • Low collector-emitter saturation voltage • Complementary types: BSP 60 . BSP 62 PNP 3 2 1 Pin Configuration VPS05163 Type Marking Package BSP 50 BSP 50 1=B 2=C 3=E
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VPS05163
OT-223
Oct-26-1999
EHP00663
EHP00664
100MHz
EHP00662
VPS05163
BSP52
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BFr pnp transistor
Abstract: BFR106 Transistor BFR 80 BFR 30 transistor
Text: BFR 106 NPN Silicon RF Transistor 3 For low noise, high-gain amplifiers For linear broadband amplifiers Special application: antenna amplifiers Complementary type: BFR 194 PNP 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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VPS05161
OT-23
Oct-26-1999
BFr pnp transistor
BFR106
Transistor BFR 80
BFR 30 transistor
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VCR modulators
Abstract: 770a
Text: BF 770A NPN Silicon RF Transistor 3 For IF amplifiers in TV-sat tuners and for VCR modulators 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 770A LSs Pin Configuration 1=B 2=E Package 3=C SOT-23 Maximum Ratings
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VPS05161
OT-23
Oct-26-1999
VCR modulators
770a
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RF NPN POWER TRANSISTOR 2.5 GHZ
Abstract: VSO05561 MARKING 1t SOT- 323
Text: BF 775W NPN Silicon RF Transistor 3 Especially suitable for TV-sat and UHF tuners 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 775W LOs Pin Configuration 1=B 2=E Package 3=C SOT-323 Maximum Ratings
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VSO05561
OT-323
Oct-26-1999
RF NPN POWER TRANSISTOR 2.5 GHZ
VSO05561
MARKING 1t SOT- 323
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VPS05178
Abstract: No abstract text available
Text: BGA 318 Silicon Bipolar MMIC-Amplifier 3 Cascadable 50 -gain block 16 dB typical gain at 1.0 GHz 4 12 dBm typical P -1dB at 1.0 GHz 3 dB-bandwidth: DC to 1.2 GHz 2 1 RF IN RF OUT/Bias 1 VPS05178 3 Circuit Diagram 2, 4 GND EHA07312 Type Marking BGA 318
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VPS05178
EHA07312
OT-143
Oct-26-1999
VPS05178
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Transistor K 799
Abstract: transistor BF 450
Text: BF 799 NPN Silicon RF Transistor 3 For linear broadband amplifier application up to 500 MHz SAW filter driver in TV tuners 2 1 Type Marking BF 799 LKs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings Parameter Symbol Collector-emitter voltage
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VPS05161
OT-23
Oct-26-1999
100MHz
EHT07115
EHT07116
EHT07117
Transistor K 799
transistor BF 450
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Untitled
Abstract: No abstract text available
Text: BF 775 NPN Silicon RF Transistor 3 Especially suitable for TV-sat and UHF tuners 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 775 LOs Pin Configuration 1=B 2=E Package 3=C SOT-23 Maximum Ratings
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VPS05161
OT-23
Oct-26-1999
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Untitled
Abstract: No abstract text available
Text: F M REV A B C 13.0 12.2 REVISIONS DESCRIPTION, ECN, EAR NO. NEW PROPOSAL CHANGE THE NOTES ABOUT GEL CORRECT WORD SPELLING IN NOTES DATE OCT26/12 OCT31/12 NOV05/12 APP'D L.CHAN L.CHAN L.CHAN 2 3 NOTES: MATERIALS: HOUSING: ENGINEERING THERMOPLASTIC, FLAMMABILITY U L94V-0
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OCT26/12
OCT31/12
NOV05/12
L94V-0
0CT26/12
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UL-1950
Abstract: No abstract text available
Text: 1. M e c h a n ic a l D im e n s i o n s : 2. S c h e m a t i c : PRI Line 1o SEC (Chip) ^ 0 8 30- -0 5 20 -07 - 4o- -06 3. Electrical Specifications: 25DC OCL: Pins 1-4 98uH±6% @10KHz 0.1V, Tie Pins 2- 3 LL: Pins 1-4 2,5uH Max @1Q0KHz 0.1 V, Tíe Pins 2-3, 5 - 6 - 7 - 8
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XF0709-
AD26S
MIL-STD-202.
UL94-V-0
E151556
102mm]
05OKHz,
B75Vrms
100KHz,
150-300KHz
UL-1950
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