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    MT49H16M18C Price and Stock

    Micron Technology Inc MT49H16M18CBM-25:B

    IC DRAM 288MBIT PARALLEL 144UBGA
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    Micron Technology Inc MT49H16M18CTR-25:B

    IC DRAM 288MBIT PARALLEL 400MHZ
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    Micron Technology Inc MT49H16M18CFM-25:B

    IC DRAM 288MBIT PARALLEL 144UBGA
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    Micron Technology Inc MT49H16M18CFM-5-IT

    IC DRAM 288MBIT PARALLEL 144UBGA
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    Micron Technology Inc MT49H16M18CSJ-25:B

    IC DRAM 288MBIT PARALLEL 144FBGA
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    MT49H16M18C Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MT49H16M18C Micron 288Mb SIO REDUCED LATENCY(RLDRAM II) Original PDF
    MT49H16M18CBM-25:B TR Micron Technology Integrated Circuits (ICs) - Memory - IC DRAM 288M PARALLEL 144UBGA Original PDF
    MT49H16M18CBM-25:B Micron Technology Memory, Integrated Circuits (ICs), IC RLDRAM 288MBIT 2.5NS UBGA Original PDF
    MT49H16M18CBM-25:B Micron Technology Memory, Integrated Circuits (ICs), IC RLDRAM 288MBIT 2.5NS UBGA Original PDF
    MT49H16M18CBM-25IT Micron Technology Memory, Integrated Circuits (ICs), IC RLDRAM 288MBIT 2.5NS UBGA Original PDF
    MT49H16M18CBM-25IT Micron Technology Memory, Integrated Circuits (ICs), IC RLDRAM 288MBIT 2.5NS UBGA Original PDF
    MT49H16M18CBM-25 IT:B Micron Technology Integrated Circuits (ICs) - Memory - IC DRAM 288M PARALLEL 144UBGA Original PDF
    MT49H16M18CBM-25 IT:B TR Micron Technology Integrated Circuits (ICs) - Memory - IC DRAM 288M PARALLEL 144UBGA Original PDF
    MT49H16M18CFM-25 Micron 288Mb RLDRAM Component Original PDF
    MT49H16M18CFM-25:B Micron Technology Integrated Circuits (ICs) - Memory - IC DRAM 288M PARALLEL 144UBGA Original PDF
    MT49H16M18CFM-25:B TR Micron Technology Integrated Circuits (ICs) - Memory - IC DRAM 288M PARALLEL 144UBGA Original PDF
    MT49H16M18CFM-33 Micron 288Mb RLDRAM Component Original PDF
    MT49H16M18CFM-33:B TR Micron Technology Integrated Circuits (ICs) - Memory - IC DRAM 288M PARALLEL 144UBGA Original PDF
    MT49H16M18CFM-33 IT Micron 288Mb RLDRAM Component Original PDF
    MT49H16M18CFM-5 Micron 288Mb RLDRAM Component Original PDF
    MT49H16M18CFM-5 IT Micron 288Mb RLDRAM Component Original PDF
    MT49H16M18CFM-5IT Micron Technology Memory, Integrated Circuits (ICs), IC RLDRAM 288MBIT 5NS 144UBGA Original PDF
    MT49H16M18CFM-xx Micron 288Mb SIO REDUCED LATENCY(RLDRAM II) Original PDF
    MT49H16M18CHU-25 Micron 288Mb RLDRAM Component Original PDF
    MT49H16M18CHU-33 Micron 288Mb RLDRAM Component Original PDF

    MT49H16M18C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MT49H16M18C

    Abstract: No abstract text available
    Text: 16 Meg x 18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features 288Mb SIO Reduced Latency RLDRAM II MT49H16M18C For the latest data sheet, refer to Micron’s Web site: www.micron.com/rldram Features Figure 1: • 400 MHz DDR operation (800 Mb/s/pin data rate)


    Original     		PDF 288Mb MT49H16M18C 09005aef80a41b59/Source: 09005aef811ba111 MT49H8M18C MT49H16M18C

    15READ

    Abstract: marking ba5 MT49H8M18C MT49H16M18C
    Text: 288Mb: 16 Meg x 18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features 288Mb SIO Reduced Latency RLDRAM II MT49H16M18C For the latest data sheet, refer to Micron’s Web site: www.micron.com/rldram Features Figure 1: • 400 MHz DDR operation (800 Mb/s/pin data rate)


    Original     		PDF 288Mb: 288Mb MT49H16M18C 09005aef80a41b59/Source: 09005aef811ba111 MT49H8M18C 15READ marking ba5 MT49H16M18C

    smd dk qk

    Abstract: SMD MARKING CODE ACY smd marking codes BA5 smd marking codes BA2 RLDRAM MT49H16M18C
    Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb clo68-3900 MT49H16M18C smd dk qk SMD MARKING CODE ACY smd marking codes BA5 smd marking codes BA2 RLDRAM

    MT49H16M18C

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb MT49H8M18C MT49H16M18C

    MT49H16M18C

    Abstract: No abstract text available
    Text: 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb 09005aef80a41b59/zip: 09005aef811ba111 MT49H8M18C MT49H16M18C

    RLDRAM

    Abstract: MT49H16M18C
    Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM 2 Features SIO RLDRAM 2 MT49H16M18C – 16 Meg x 18 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Organization


    Original     		PDF 288Mb: MT49H16M18C 09005aef80a41b59/Source: 09005aef811ba111 2003Micron RLDRAM MT49H16M18C

    MT49H16M18C

    Abstract: No abstract text available
    Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Organization


    Original     		PDF 288Mb: MT49H16M18C 09005aef80a41b59/Source: 09005aef811ba111 2003Micron MT49H16M18C

    MT49H16M18C

    Abstract: No abstract text available
    Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate • 14.4 Gb/s peak bandwidth (x18 at 400 MHz clock frequency) • Organization


    Original     		PDF 288Mb: MT49H16M18C 09005aef815b2df8/Source: 09005aef811ba111 2003Micron MT49H16M18C

    RLDRAM mt49h

    Abstract: MT49H16M18C
    Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate • 14.4 Gb/s peak bandwidth (x18 at 400 MHz clock frequency) • Organization


    Original     		PDF 288Mb: MT49H16M18C 09005aef80a41b59/Source: 09005aef811ba111 288Mb RLDRAM mt49h MT49H16M18C

    SMD d1c

    Abstract: SMD MARKING CODE ACY qkx capacitor smd codes marking A21 MT49H16M18C
    Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb clo68-3900 MT49H16M18C SMD d1c SMD MARKING CODE ACY qkx capacitor smd codes marking A21

    smd transistor marking HT1

    Abstract: MT49H16M18C MICRON BGA PART MARKING RLDRAM smd MARKING dk transistor SMD DK rc A202 A212 A221 TN-00-08
    Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate • 28.8 Gb/s peak bandwidth (x18 at 400 MHz clock frequency) • Organization


    Original     		PDF 288Mb: MT49H16M18C 09005aef815b2df8/Source: 09005aef811ba111 2003Micron smd transistor marking HT1 MT49H16M18C MICRON BGA PART MARKING RLDRAM smd MARKING dk transistor SMD DK rc A202 A212 A221 TN-00-08

    smd marking codes BA5

    Abstract: MT49H16M18C
    Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb MT49H16M18C smd marking codes BA5

    MT49H16M18C

    Abstract: No abstract text available
    Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball µBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb clo68-3900 MT49H16M18C

    BA5 marking

    Abstract: BA7 marking plastic BA5 marking code A53 SMD Marking Code ba7 transistor SMD MARKING CODE ACY MT49H16M18C smd cod RLDRAM A22 SMD MARKING CODE
    Text: 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb MT49H16M18C MT49H32M9C 144-Ball 288Mb 09005aef80a41b59/zip: 09005aef811ba111 MT49H8M18C BA5 marking BA7 marking plastic BA5 marking code A53 SMD Marking Code ba7 transistor SMD MARKING CODE ACY MT49H16M18C smd cod RLDRAM A22 SMD MARKING CODE

    E33-DW1

    Abstract: PD48288236FF-EF25-DW1-A MT49H16M18CFM-25 micron
    Text: インフォメーション 288M Low Latency DRAMと他社互換製品の 互換性 資料番号 M19702JJ1V0IF00（第1版） 発行年月 March 2009 NS NEC Electronics Corporation 2009 〔メ モ〕 2 インフォメーション M19702JJ1V0IF CMOSデバイスの一般的注意事項


    Original     		PDF M19702JJ1V0IF001 M19702JJ1V0IF PD48288236 PD48288218 PD48288209 PD48288118 PD48288209, PD48288118 E33-DW1 PD48288236FF-EF25-DW1-A MT49H16M18CFM-25 micron

    Xilinx spartan xc3s400_ft256

    Abstract: XC3S400_FT256 XC3S400PQ208 XC3S250EPQ208 xc3s400TQ144 XC3S400FT256 xc3s1400afg676 XC3S700AFG484 XC3S500EPQ208 XC3S200FT256
    Text: Memory Interface Solutions User Guide UG086 v3.3 December 2, 2009 R R Xilinx is disclosing this Document and Intellectual Property (hereinafter “the Design”) to you for use in the development of designs to operate on, or interface with Xilinx FPGAs. Except as stated herein, none of the Design may be copied, reproduced, distributed, republished,


    Original     		PDF UG086 DQS10 DQS11 DQS12 DQS13 DQS14 DQS15 DQS16 DQS17 Xilinx spartan xc3s400_ft256 XC3S400_FT256 XC3S400PQ208 XC3S250EPQ208 xc3s400TQ144 XC3S400FT256 xc3s1400afg676 XC3S700AFG484 XC3S500EPQ208 XC3S200FT256

    DB3 C432

    Abstract: 2n2222 sot23 PR55D C458 DB3 C418 db3 c248 BOURNS-3224W-10K transistor C458 transistor c331 DB3 C327
    Text: LatticeSC PCI Express x1 Evaluation Board User’s Guide November 2008 Revision: EB24_01.4 LatticeSC PCI Express x1 Evaluation Board User’s Guide Lattice Semiconductor Introduction This user’s guide describes the LatticeSC PCI Express x1 Evaluation Board featuring the LatticeSC LFSCM3GA25


    Original     		PDF LFSCM3GA25 DB3 C432 2n2222 sot23 PR55D C458 DB3 C418 db3 c248 BOURNS-3224W-10K transistor C458 transistor c331 DB3 C327

    Board Design Guideline

    Abstract: board design guidelines RLDRAM k4h561638f EP1S60 EP2S15 EP2S30 ep2s60f1020 gx
    Text: Interfacing RLDRAM II with Stratix II, Stratix,& Stratix GX Devices Application Note 325 November 2005, ver. 3.1 Introduction Reduced latency DRAM II RLDRAM II is a DRAM-based point-to-point memory device designed for communications, imaging, and server


    Original     		PDF

    DDQ15

    Abstract: PD48288236FF-EF25-DW1-A MT49H16M18BM-25 MT49H16M18FM-25 PD48288236FF-E33-DW1-A MT49H16M18CBM-33 PD48288236 M18801E MT49H16M18FM
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF M19702JJ1V0IF001 M19702JJ1V0IF DDQ15 PD48288236FF-EF25-DW1-A MT49H16M18BM-25 MT49H16M18FM-25 PD48288236FF-E33-DW1-A MT49H16M18CBM-33 PD48288236 M18801E MT49H16M18FM

    MT29F1G08aba

    Abstract: MT29F1G16ABA mt29f1g08 MT47H64M16 MT48LC32M16A2 MT49H32M18FM mt47h128m8 MT9V022 note Vfbga 10x19 MT48LC4M32B2
    Text: Extended Operating Temperature Products Micron’s Extensive Line of Extended Operating Temperature Products Ultimate Performance Under Extreme Conditions Modern life is dependent on electronics that operate in exceptionally harsh environments. Cellular base stations and automotive electronics are just


    Original     		PDF 52-ball MT29F1G08aba MT29F1G16ABA mt29f1g08 MT47H64M16 MT48LC32M16A2 MT49H32M18FM mt47h128m8 MT9V022 note Vfbga 10x19 MT48LC4M32B2

    TRACE INVERTER MODEL 2524

    Abstract: PHY 2078 MT9VDDT3272AG-40B ddr phy HYB25D25616OBT-5A k4h561638f EP2S60F1020C3 EP2S60F1020C4 HYS72D32300GU-5-B K4H561638F-TCCC
    Text: Interfacing DDR SDRAM with Stratix II Devices Application Note 327 September 2008 ver. 3.2 Introduction DDR SDRAM devices are widely used today for a broad range of applications, such as embedded processor systems, image processing, storage, communications and networking. In addition, the universal


    Original     		PDF

    CY7C1315AV18-200BZC

    Abstract: RLDRAM
    Text: QDR SRAM and RLDRAM: A Comparative Analysis By Anuj Chakrapani, Cypress Semiconductor Corp. Abstract Today’s high-speed networking applications require high-bandwidth and high-density memory solutions. For instance, typical networking line cards need memories for a variety of operations that include packet


    Original     		PDF relatidatasheets/rldram/MT49H16M18C TN-49-02, com/pdf/technotes/RLDRAMII/TN4902 TN-49-01, CY7C1315AV18-200BZC RLDRAM