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Solid State Devices Inc (SSDI) MJ16018 Bjt, Npn, To-3; Transistor Polarity:Npn; Collector Emitter Voltage Max:800V; Continuous Collector Current:10A; Power Dissipation:175W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:-; Product Range:- Rohs Compliant: Yes \|Solid State MJ16018
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Newark	MJ16018	Bulk	76		1	1 $22.4 10 $21.76 100 $20.8 1000 $20.48 10000 $20.48	Buy Now
Bristol Electronics	MJ16018		1			1 - 10 - 100 - 1000 - 10000 -	Get Quote
New Jersey Semiconductor Products, Inc. MJ16018
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Bristol Electronics	MJ16018		3,143		1	1 $27.6 10 $27.6 100 $23.3551 1000 $22.632 10000 $22.632	Buy Now
Others MJ16018
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Motorola Semiconductor Products MJ16018
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Bristol Electronics	MJ16018		4			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	MJ16018		79			1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Jersey Semiconductor Products Inc MJ16018 TRANSISTOR,BJT,NPN,800V V(BR)CEO,10A I(C),TO-204AA
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Quest Components	MJ16018		2,514			1 $29.9 10 $29.9 100 $29.9 1000 $23 10000 $23	Buy Now

MJ16018 Datasheets (9)

Part	Manufacturer	Description	Datasheet Type	PDF
MJ16018	On Semiconductor	POWER TRANSISTORS 10 AMPERES 800 VOLTS 125 AND 175 WATTS	Original	PDF
MJ16018	Motorola	European Master Selection Guide 1986	Scan	PDF
MJ16018	Motorola	Power Transistors 10 Amp 800 Volts 125 & 175 Watts	Scan	PDF
MJ16018	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
MJ16018	Motorola	Switchmode Datasheet	Scan	PDF
MJ16018	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
MJ16018	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
MJ16018	Semiconductor Technology	NPN & PNP High Voltage Silicon High Power Transistors	Scan	PDF
MJ-16018	Semiconductor Technology	NPN & PNP High Voltage Silicon High Power Transistors	Scan	PDF

MJ16018 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MJ16018 Abstract: No abstract text available Text: SavantIC Semiconductor Product Specification MJ16018 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage ,high speed APPLICATIONS ·Switching Regulators ·Inverters ·Solenoids ·Relay Drivers ·Motor Controls ·Deflection Circuits	Original	MJ16018 MJ16018	PDF
2n3773 b2 Abstract: SDT9207 "cross reference" equivalent bu808 2SC1030 "cross reference" bd139 equivalent MJ3001 equivalent MJE371 equivalent D45H11 equivalent replacement bd433 buv20 equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ16018* MJW16018*  Data Sheet Designer's NPN Silicon Power Transistors *Motorola Preferred Device 1.5 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for	Original	TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2N6490 2n3773 b2 SDT9207 "cross reference" equivalent bu808 2SC1030 "cross reference" bd139 equivalent MJ3001 equivalent MJE371 equivalent D45H11 equivalent replacement bd433 buv20 equivalent	PDF
mj16018 Abstract: No abstract text available Text: Inchange Semiconductor Product Specification MJ16018 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS ・Switching Regulators ・Inverters ・Solenoids ・Relay Drivers ・Motor Controls ・Deflection Circuits	Original	MJ16018 mj16018	PDF
MJ16018 Abstract: MJ-16018 1400v npn Text: SavantIC Semiconductor Product Specification MJ16018 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage ,high speed APPLICATIONS ·Switching Regulators ·Inverters ·Solenoids ·Relay Drivers ·Motor Controls ·Deflection Circuits	Original	MJ16018 MJ16018 MJ-16018 1400v npn	PDF
tc4500 Abstract: MJ16018 Text: ON Semiconductort MJ16018 * MJW16018 * NPN Silicon Power Transistors 1.5 kV SWITCHMODEt Series *Not Recommended for New Design These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are	Original	MJ16018 MJW16018 r14525 MJ16018/D tc4500 MJ16018	PDF
download MUR1100 Abstract: Bipolar Power Transistor Data MJ16018/cp4071 MJ16018/2SD218 equivalent MJW16018 MJ16018 MJE210 MTP12N10 MTP8P10 MUR105 Text: MOTOROLA Order this document by MJ16018/D SEMICONDUCTOR TECHNICAL DATA Designer's MJ16018* MJW16018 *  Data Sheet NPN Silicon Power Transistors *Motorola Preferred Device 1.5 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in	Original	MJ16018/D MJ16018* MJW16018 MJ16018/D* download MUR1100 Bipolar Power Transistor Data MJ16018/cp4071 MJ16018/2SD218 equivalent MJW16018 MJ16018 MJE210 MTP12N10 MTP8P10 MUR105	PDF
PA-21MC/8040.11.30 Abstract: No abstract text available Text: TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MJ16018 MJH16018 10 AMPERE NPN SILICON POWER TRANSISTORS 1.5 kV SWITCHMODE III SERIES NPN SILICON POWER TRANSISTORS These transistors are designed for high-voltage, high-speed,	Original	MJ16018 MJH16018 PA-21MC/8040.11.30	PDF
MC68B21CP Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References	Original	SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N	PDF
BUV48I Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable	Original	2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046	PDF
2N5657 equivalent Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.	Original	2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes	PDF
MJE494 Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS	Original	BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037	PDF
2SD669 equivalent Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc	Original	2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544	PDF
2SC495 Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink	Original	MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar	PDF
"Tektronix 475" Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,	Original	48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent	PDF

mje521 equivalent Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry	Original	MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100	PDF
2N3055 Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes	Original	MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64	PDF
2N5631 equivalent Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —	Original	2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator	PDF
BD179-10 equivalent Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.	Original	BD179 BD180 BD179-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BD179-10 equivalent BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MJ16018/D SEMICONDUCTOR TECHNICAL DATA M J16018* M JW 16018* D esigner’s Data Sheet NPN Silicon Power Transistors ‘ Motorola Preferred Device 1.5 kV SWITCHMODE Series These transistors are designed for high-voltage, high-speed, power switching in	OCR Scan	MJ16018/D J16018* 340F-03 O-247AE	PDF
STI-430 Abstract: DTS-411 DTS-804 Transistor DTS801 DTS-430 DTS-423 transistor MJ 15024 STI801 DTS-723 transistor st 431 Text: SEMICONDUCTOR TECHNOLOGY OSE D J fll3bM5fl D G 0 0 2 S b NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TRANSISTORS STI Type ST-13071 ST-13080 ST-13081 ST-13090 ST-13091 Industry Type MJ-13071 MJ-13080 MJ-13081 MJ-13090 MJ-13091 Power Dissipation @25 °C watts	OCR Scan	DG0022L, ST-13071 ST-13080 ST-13081 ST-13090 ST-13091 MJ-13071 MJ-13080 MJ-13081 MJ-13090 STI-430 DTS-411 DTS-804 Transistor DTS801 DTS-430 DTS-423 transistor MJ 15024 STI801 DTS-723 transistor st 431	PDF
transistor buv18a Abstract: motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference" Text: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s US Max tf US Max fT MHz Min P q (Case) Watts hFE Min/Max @ lc Amp MPSU60 30 min	OCR Scan	MPSU10 MPSU02 MPSU03 MPSU04 MPSU01 MPSU01A MPSU45# MPSU60 MPSU52 MPSU51 transistor buv18a motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"	PDF
triac zd 607 Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.	OCR Scan	SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845	PDF
AN952 Abstract: MJ16016 MJ16004 MJ16008 MJ16018 MJH16008 MR826 MUR8100 AN952 MOTOROLA Ultra-Fast Recovery Rectifiers Text: I M O T O R O L A I N C AN952 . Application Note < ULTRAFAST RECOVERY RECTIFIERS EXTEND POWER TRANSISTOR SOA Prepared by: W arren Schultz M otorola Power Products Division Traditionally, bipolar power tran sisto rs have been lim ited to collector-em itter breakdow n V (B R C E O ( sus >>	OCR Scan	AN952 1ATX1871S-2 AN952/D AN952 MJ16016 MJ16004 MJ16008 MJ16018 MJH16008 MR826 MUR8100 AN952 MOTOROLA Ultra-Fast Recovery Rectifiers	PDF
MJH16018 Abstract: baker e4 MTPSP10 P6302 a626 AM503 bt 109 transistor K1118 MJ16018 MTP8P10 Text: MOTORGLA SC XSTRS/R F 12E D I t»3b?E5M []GaS227 1 \| 7 ^ 3 3 - / S ' ' MOTOROLA r - 3 3 -/ 3 SEMICONDUCTOR TECHNICAL DATA M J16018 MJH16018 Designer's Data Sheet NPN Silicon Pow er Transistors 1.5 k V Sw itch m ode III Series These transistors are designed for high-voltage, high-speed, power switching in induc	OCR Scan	I6S98SC MJ16018 O-218AC MJH16018 MJH16018 baker e4 MTPSP10 P6302 a626 AM503 bt 109 transistor K1118 MJ16018 MTP8P10	PDF

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MJ16018 Price and Stock

Solid State Devices Inc (SSDI) MJ16018

New Jersey Semiconductor Products, Inc. MJ16018

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MJ16018 Datasheets (9)

MJ16018 Datasheets Context Search

MJ16018

2n3773 b2

mj16018

MJ16018

tc4500

download MUR1100

PA-21MC/8040.11.30

MC68B21CP

BUV48I

2N5657 equivalent

MJE494

2SD669 equivalent

2SC495

"Tektronix 475"

mje521 equivalent

2N3055

2N5631 equivalent

BD179-10 equivalent

Untitled

STI-430

transistor buv18a

triac zd 607

AN952

MJH16018