MDS9651
Abstract: Power MOSFET SO-8 Complementary N-P channel MDS965 PF3506 601ID 1S1020 82269
Text: Complementary N-P Channel Trench MOSFET General Description Features The MDS9651 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability N-Channel • VDS = 30V ■ ID=7.2A ■ RDS ON
|
Original
|
MDS9651
MDS9651
Power MOSFET SO-8 Complementary N-P channel
MDS965
PF3506
601ID
1S1020
82269
|
PDF
|
MDS9651
Abstract: MDS9651URH trench mosfet N-P Channel mosfet 40V Complementary MOSFET
Text: Complementary N-P Channel Trench MOSFET General Description Features N-Channel VDS = 30V ID = 6.9A @ VGS = 10V RDS ON <28mΩ @ VGS = 10V <42mΩ @ VGS = 4.5V The MDS9651 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent
|
Original
|
MDS9651
MDS9651
MDS9651URH
trench mosfet
N-P Channel mosfet
40V Complementary MOSFET
|
PDF
|
MDS9651
Abstract: N-P Channel mosfet Power MOSFET SO-8 Complementary N-P channel
Text: Preliminary – Subject to change without notice Complementary N-P Channel Trench MOSFET General Description Features The MDS9651 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and exellent reliability
|
Original
|
MDS9651
MDS9651
N-P Channel mosfet
Power MOSFET SO-8 Complementary N-P channel
|
PDF
|